公开(公告)号：US20170125641A1

公开(公告)日：2017-05-04

申请号：US15316125

申请日：2015-06-03

申请人： SEMICON LIGHT CO., LTD.

发明人： Soo Kun JEON ,  Tae Hyun KIM ,  Tea Jin KIM ,  Jun Chun PARK ,  Byeong Seob KIM ,  Jong Won KIM ,  Ki Man PARK

IPC分类号： H01L33/46 ,  H01L33/14 ,  H01L33/38 ,  H01L33/06 ,  H01L33/32

CPC分类号： H01L33/46 ,  H01L27/153 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L2933/0025

摘要： Disclosed is a semiconductor light emitting device including: multiple semiconductor layers including a first semiconductor layer, a second semiconductor layer, and an active layer; an electrode electrically connected with the multiple semiconductor layers; a light absorption barrier disposed about at least the electrode; and a non-conductive reflective film adapted to cover the multiple semiconductor layers, the light absorption barrier and the electrode and to reflect light from the active layer, wherein the non-conductive reflective film has an abnormal region of a lower reflectivity around the electrode due to a height difference between the light absorption barrier and the electrode, wherein a portion of the non-conductive reflective film exposed from the electrode is made longer than the abnormal region as seen in a cross-sectional view of the electrode.

公开(公告)号：US20200287088A1

公开(公告)日：2020-09-10

申请号：US16068081

申请日：2017-01-05

申请人： SEMICON LIGHT CO., LTD.

发明人： Soo Kun JEON ,  Geun Mo JIN ,  Jun Chun PARK ,  Yeon Ho JEONG ,  Il Gyun CHOI

IPC分类号： H01L33/38 ,  H01L33/00 ,  H01L33/46 ,  H01L33/06 ,  H01L33/32 ,  H01L33/12 ,  H01L33/62 ,  H01L27/15

摘要： Disclosed is a semiconductor light emitting device characterized by being a flip chip including: a plurality of semiconductor layers, which includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers and adapted to generate light by electron-hole recombination; an insulating layer, which is formed on the plurality of semiconductor layers and has openings; and an electrode formed on the insulating layer and electrically connected to the plurality of semiconductor layers through the opening, wherein the electrode has a top face and a bottom face, with the top face having a smaller area than the bottom face.

公开(公告)号：US20180076362A1

公开(公告)日：2018-03-15

申请号：US15563273

申请日：2016-04-04

申请人： SEMICON LIGHT CO., LTD.

发明人： Soo Kun JEON ,  Jun Chun PARK ,  Il Gyun CHOI ,  Sung Gi LEE ,  Dae Soo SOUL ,  Tea Jin KIM ,  Yeon Ho JEONG ,  Geun Mo JIN ,  Sung Chan LEE

IPC分类号： H01L33/46 ,  H01L33/42 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/62

CPC分类号： H01L33/46 ,  H01L33/10 ,  H01L33/24 ,  H01L33/325 ,  H01L33/36 ,  H01L33/382 ,  H01L33/385 ,  H01L33/387 ,  H01L33/42 ,  H01L33/62 ,  H01L51/5262 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2924/00014

摘要： Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a first non-conductive reflective film formed on the plurality of semiconductor layer to reflect light from the active layer, wherein the first non-conductive reflective film includes multiple layers and has a first incident angle as the Brewster angle; a second non-conductive reflective film formed on the first non-conductive reflective film to reflect light transmitted through the first non-conductive reflective film, wherein the second non-conductive reflective film includes multiple layers, with part of which being made of a different material from the first non-conductive reflective film, and has a second incident angle as the Brewster angle, different from the first incident angle; and an electrode electrically connected to the plurality of semiconductor layers.