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公开(公告)号：US11626521B2
公开(公告)日：2023-04-11
申请号：US17083485
申请日：2020-10-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Junichiro Sakata , Masayuki Sakakura , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama
IPC: H01L27/12 , H01L29/786 , H01L27/32 , H01L51/52 , H01L29/24
Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.
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公开(公告)号：US11469387B2
公开(公告)日：2022-10-11
申请号：US17496271
申请日：2021-10-07
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shingo Eguchi , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama
Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
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公开(公告)号：US09887276B2
公开(公告)日：2018-02-06
申请号：US14107618
申请日：2013-12-16
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama
CPC classification number: H01L29/66969 , H01L21/02502 , H01L21/02565 , H01L21/02664 , H01L21/28008 , H01L27/1225 , H01L29/7869 , H01L29/78696
Abstract: Disclosed is a method to manufacture a thin film transistor having an oxide semiconductor as a channel formation region. The method includes; forming an oxide semiconductor layer over a gate insulating layer; forming a source and drain electrode layers over and in contact with the oxide semiconductor layer so that at least portion of the oxide semiconductor layer is exposed; and forming an oxide insulating film over and in contact with the oxide semiconductor layer. The exposed portion of the oxide semiconductor may be exposed to a gas containing oxygen in the presence of plasma before the formation of the oxide insulating film. The method allows oxygen to be diffused into the oxide semiconductor layer, which contributes to the excellent characteristics of the thin film transistor.
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公开(公告)号：US10374184B2
公开(公告)日：2019-08-06
申请号：US15332195
申请日：2016-10-24
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shingo Eguchi , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama
Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
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公开(公告)号：US09666820B2
公开(公告)日：2017-05-30
申请号：US13767250
申请日：2013-02-14
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shingo Eguchi , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama
CPC classification number: H01L51/5012 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L27/3262 , H01L27/3272 , H01L27/3276 , H01L29/78678 , H01L29/7869 , H01L51/0097
Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
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Patent Agency Ranking
公开(公告)号：US09466756B2
公开(公告)日：2016-10-11
申请号：US13937561
申请日：2013-07-09
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Junichiro Sakata , Masayuki Sakakura , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama
CPC classification number: H01L27/1225 , H01L21/385 , H01L27/1214 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L27/127 , H01L27/1288 , H01L29/4908 , H01L29/78648 , H01L29/7869 , H01L33/0041 , H01L2924/0002 , H01L2924/00
Abstract: An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer which each have a shape whose end portions are located on an inner side than end portions of the semiconductor layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is provided between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected in an opening provided in a gate insulating layer through an oxide conductive layer.
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公开(公告)号：US09431427B2
公开(公告)日：2016-08-30
申请号：US14527204
申请日：2014-10-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yoshiaki Oikawa , Hotaka Maruyama , Hiromichi Godo , Daisuke Kawae , Shunpei Yamazaki
IPC: H01L27/14 , H01L27/12 , H01L29/786 , H01L21/02
CPC classification number: H01L27/1225 , G02F1/1368 , G02F2201/121 , G02F2201/123 , H01L21/02565 , H01L21/02631 , H01L27/1214 , H01L27/124 , H01L27/156 , H01L27/3248 , H01L27/3262 , H01L29/24 , H01L29/78618 , H01L29/7869 , H01L29/78693 , H01L29/78696
Abstract: An object is to provide a semiconductor device provided with a thin film transistor having excellent electric characteristics using an oxide semiconductor layer. An In—Sn—O-based oxide semiconductor layer including SiOX is used for a channel formation region. In order to reduce contact resistance between the In—Sn—O-based oxide semiconductor layer including SiOX and a wiring layer formed from a metal material having low electric resistance, a source region or drain region is formed between a source electrode layer or drain electrode layer and the In—Sn—O-based oxide semiconductor layer including SiOX. The source region or drain region and a pixel region are formed using an In—Sn—O-based oxide semiconductor layer which does not include SiOX.
Abstract translation: 本发明的目的是提供一种具有使用氧化物半导体层的具有优异电特性的薄膜晶体管的半导体器件。 包括SiOX的In-Sn-O系氧化物半导体层用于沟道形成区域。 为了降低包含SiOX的In-Sn-O系氧化物半导体层与由电阻低的金属材料形成的布线层之间的接触电阻，在源电极层或漏极之间形成源极区或漏极区 层和包含SiOX的In-Sn-O系氧化物半导体层。 使用不包含SiOX的In-Sn-O系氧化物半导体层来形成源极区域或漏极区域以及像素区域。
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公开(公告)号：US09130041B2
公开(公告)日：2015-09-08
申请号：US13870027
申请日：2013-04-25
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Junichiro Sakata , Kosei Noda , Masayuki Sakakura , Yoshiaki Oikawa , Hotaka Maruyama
IPC: H01L21/00 , H01L29/786 , H01L27/12 , H01L29/66 , H01L23/532
CPC classification number: H01L29/78606 , H01L23/5329 , H01L27/1225 , H01L29/24 , H01L29/66742 , H01L29/66969 , H01L29/7869 , H01L2924/0002 , H01L2924/00
Abstract: It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.
Abstract translation: 本发明的目的是制造具有电特性稳定的薄膜晶体管的高可靠性的半导体器件。 覆盖薄膜晶体管的氧化物半导体层的绝缘层包含硼元素或铝元素。 通过使用含有硼元素或铝元素的硅靶或氧化硅靶的溅射法形成含有硼元素或铝元素的绝缘层。 或者，代替硼元素的含有锑（Sb）元素或磷（P）元素的绝缘层覆盖薄膜晶体管的氧化物半导体层。
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公开(公告)号：US12057511B2
公开(公告)日：2024-08-06
申请号：US18127802
申请日：2023-03-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Junichiro Sakata , Masayuki Sakakura , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama
IPC: H01L27/12 , H01L29/24 , H01L29/786 , H10K50/80 , H10K59/12 , H10K59/38 , H10K59/121
CPC classification number: H01L29/78696 , H01L27/1225 , H01L27/124 , H01L27/127 , H01L29/247 , H01L29/78618 , H01L29/7869 , H01L29/78693 , H10K50/80 , H10K59/12 , H10K59/38 , H01L29/78648 , H10K59/1201 , H10K59/1213
Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.
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公开(公告)号：US10672915B2
公开(公告)日：2020-06-02
申请号：US15207923
申请日：2016-07-12
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Junichiro Sakata , Masayuki Sakakura , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama
IPC: H01L27/32 , H01L29/786 , H01L27/12 , H01L51/52 , H01L29/24
Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.
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