公开(公告)号：US20170125553A1

公开(公告)日：2017-05-04

申请号：US15350213

申请日：2016-11-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Masayuki SAKAKURA ,  Ryo TOKUMARU ,  Yasumasa YAMANE ,  Yuhei SATO

IPC: H01L29/66 ,  H01L21/465 ,  H01L21/02 ,  H01L21/441 ,  H01L29/786 ,  H01L21/477

CPC classification number: H01L29/66969 ,  H01L21/02255 ,  H01L21/02565 ,  H01L21/441 ,  H01L21/465 ,  H01L21/477 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1156 ,  H01L29/401 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for manufacturing a semiconductor device includes the steps of forming a first insulating film over a first gate electrode over a substrate while heated at a temperature higher than or equal to 450° C. and lower than the strain point of the substrate, forming a first oxide semiconductor film over the first insulating film, adding oxygen to the first oxide semiconductor film and then forming a second oxide semiconductor film over the first oxide semiconductor film, and performing heat treatment so that part of oxygen contained in the first oxide semiconductor film is transferred to the second oxide semiconductor film.

公开(公告)号：US20220102419A1

公开(公告)日：2022-03-31

申请号：US17275795

申请日：2019-09-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Takayuki IKEDA ,  Tetsuya KAKEHATA ,  Ryo TOKUMARU

IPC: H01L27/146

Abstract: An imaging device suitable for detecting infrared light is provided. The imaging device includes a first layer, a second layer, a third layer, and a fourth layer, which are stacked in this order. The first layer includes an infrared-light-transmitting filter. The second layer includes single crystal silicon. The third layer includes a device-formation layer. The fourth layer includes a support substrate. The second layer includes a photoelectric-conversion device whose light-absorption layer is the single crystal silicon. The third layer includes a transistor which includes a metal oxide in its channel formation region. The photoelectric-conversion device and the transistor are electrically connected. The photoelectric-conversion device receives light which has passed through the infrared-light-transmitting filter.

公开(公告)号：US20180076296A1

公开(公告)日：2018-03-15

申请号：US15697564

申请日：2017-09-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasumasa YAMANE ,  Ryo TOKUMARU ,  Hiromi SAWAI

IPC: H01L29/49 ,  H01L29/24 ,  H01L29/423 ,  H01L29/786 ,  H01L21/443 ,  H01L29/66

CPC classification number: H01L29/4908 ,  H01L21/443 ,  H01L21/4825 ,  H01L21/4842 ,  H01L21/565 ,  H01L21/78 ,  H01L22/14 ,  H01L23/544 ,  H01L27/1052 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device having stable electrical characteristics is provided. A semiconductor device that can be miniaturized or highly integrated is provided. One embodiment of the present invention includes a transistor including an oxide, a first barrier layer over the transistor, and a second barrier layer in contact with the first barrier layer. The oxide is in contact with an insulator including an excess-oxygen region. The insulator is in contact with the first barrier layer. The first barrier layer has a thickness greater than or equal to 0.5 nm and less than or equal to 1.5 nm. The second barrier layer is thicker than the first barrier layer.

公开(公告)号：US20170018631A1

公开(公告)日：2017-01-19

申请号：US15276993

申请日：2016-09-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Tetsuhiro TANAKA ,  Masashi TSUBUKU ,  Toshihiko TAKEUCHI ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Satoshi TORIUMI ,  Takashi OHTSUKI ,  Toshiya ENDO

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. The semiconductor device includes an oxide semiconductor film over an insulating surface, an antioxidant film over the insulating surface and the oxide semiconductor film, a pair of electrodes in contact with the antioxidant film, a gate insulating film over the pair of electrodes, and a gate electrode which is over the gate insulating film and overlaps with the oxide semiconductor film. In the antioxidant film, a width of a region overlapping with the pair of electrodes is longer than a width of a region not overlapping with the pair of electrodes.

Abstract translation: 抑制了电特性的变化，并且提高了使用包括氧化物半导体的晶体管的半导体器件的可靠性。 半导体器件包括绝缘表面上的氧化物半导体膜，绝缘表面上的抗氧化膜和氧化物半导体膜，与抗氧化膜接触的一对电极，一对电极上的栅极绝缘膜，以及栅极 电极，其在栅极绝缘膜上方并与氧化物半导体膜重叠。 在抗氧化剂膜中，与该对电极重叠的区域的宽度比不与该对电极重叠的区域的宽度长。

公开(公告)号：US20240006539A1

公开(公告)日：2024-01-04

申请号：US18368782

申请日：2023-09-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiromi SAWAI ,  Ryo TOKUMARU ,  Toshihiko TAKEUCHI ,  Tsutomu MURAKAWA ,  Sho NAGAMATSU ,  Tomoaki MORIWAKA

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/06 ,  H01L29/66 ,  H10B12/00

CPC classification number: H01L29/7869 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/66742 ,  H10B12/05 ,  H10B12/315

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a conductor, a first insulator in contact with a side surface of the conductor, a second insulator in contact with a top surface of the conductor and a top surface of the first insulator, and an oxide over the second insulator. The oxide includes a region that overlaps with the conductor with the second insulator interposed therebetween. The maximum height of a roughness curve (Rz) of the top surface of the conductor is 6.0 nm or smaller. The region includes crystals, and c-axes of the crystals are aligned in the normal direction of the top surface of the conductor.

公开(公告)号：US20210126130A1

公开(公告)日：2021-04-29

申请号：US16643453

申请日：2018-08-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yoshinobu ASAMI ,  Takahisa ISHIYAMA ,  Motomu KURATA ,  Ryo TOKUMARU ,  Noritaka ISHIHARA ,  Yusuke NONAKA

IPC: H01L29/786 ,  H01L29/22 ,  H01L29/66

Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

公开(公告)号：US20160172500A1

公开(公告)日：2016-06-16

申请号：US14963945

申请日：2015-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro TANAKA ,  Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Ryo TOKUMARU ,  Yuhei SATO ,  Kazuhiro TSUTSUI

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/423 ,  H01L29/66 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/7869 ,  C23C14/08 ,  C23C14/3414 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2029/42388

Abstract: A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm2 and less than or equal to 1E16 molecules/cm2.

Abstract translation: 提供具有稳定电特性的晶体管。 晶体管包括在衬底上的第一绝缘体; 第一绝缘子上的第一至第三绝缘体; 在所述第三氧化物绝缘体上的第二绝缘体; 第二绝缘体上的第一导体; 以及在第一导体上的第三绝缘体。 每个第一和第二氧化物绝缘体的导带最小值的能级比氧化物半导体的能级更接近真空度。 第三氧化物绝缘体的导带最小值的能级比第二氧化物绝缘体的能级更接近真空度。 第一绝缘体包含氧。 通过热解吸光谱测定从第一绝缘体释放的氧分子的数量大于或等于1E14分子/ cm 2且小于或等于1E16分子/ cm 2。

公开(公告)号：US20220059701A1

公开(公告)日：2022-02-24

申请号：US17501061

申请日：2021-10-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yoshinobu ASAMI ,  Takahisa ISHIYAMA ,  Motomu KURATA ,  Ryo TOKUMARU ,  Noritaka ISHIHARA ,  Yusuke NONAKA

IPC: H01L29/786 ,  H01L29/22 ,  H01L29/66

Abstract: A semiconductor device with favorable reliability is provided.
The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

公开(公告)号：US20210273109A1

公开(公告)日：2021-09-02

申请号：US17253239

申请日：2019-06-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Takanori MATSUZAKI ,  Ryo TOKUMARU ,  Ryota HODO

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/108

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a capacitor, an electrode, and an interlayer film. The transistor includes a semiconductor layer, a gate, a source, and a drain; the transistor and the capacitor are placed to be embedded in the interlayer film. Below the semiconductor layer, one of the source and the drain is in contact with the electrode. Above the semiconductor layer, the other of the source and the drain is in contact with one electrode of the capacitor.

公开(公告)号：US20170352746A1

公开(公告)日：2017-12-07

申请号：US15664106

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Tetsuhiro TANAKA ,  Masashi TSUBUKU ,  Toshihiko TAKEUCHI ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Satoshi TORIUMI ,  Takashi OHTSUKI ,  Toshiya ENDO

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. Oxygen is introduced into a surface of an insulating film, and then, an oxide semiconductor, a layer which is capable of blocking oxygen, a gate insulating film, and other films which composes a transistor are formed. For at least one of the first gate insulating film and the insulating film, three signals in Electron Spin Resonance Measurement are each observed in a certain range of g-factor. Reducing the sum of the spin densities of the signals will improve reliability of the semiconductor device.