公开(公告)号：US20200335609A1

公开(公告)日：2020-10-22

申请号：US16959259

申请日：2019-01-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasutaka NAKAZAWA ,  Takashi HAMOCHI ,  Takayuki OHIDE ,  Kenichi OKAZAKI

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/443 ,  H01L21/4763 ,  H01L29/45 ,  H01L29/786

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable display device is provided. The semiconductor device is fabricated by a method that includes a first step of forming a semiconductor layer containing a metal oxide, a second step of forming a conductive film over the semiconductor layer, a third step of etching the conductive film such that the conductive film is divided over the semiconductor layer and a portion of the semiconductor layer is uncovered, and a fourth step of performing first treatment on the conductive film and the portion of the semiconductor layer. The conductive film contains copper, silver, gold, or aluminum. The first treatment is plasma treatment in an atmosphere containing a mixed gas of a first gas containing an oxygen element and a second gas containing a hydrogen element.

公开(公告)号：US20230197824A1

公开(公告)日：2023-06-22

申请号：US17747063

申请日：2022-05-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasutaka NAKAZAWA ,  Kenichi OKAZAKI ,  Takayuki OHIDE ,  Rai SATO

IPC: H01L29/45 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/45 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  G02F1/1368

Abstract: A semiconductor device is fabricated by a method including the following steps: a first step of forming a semiconductor film containing a metal oxide over an insulating layer; a second step of forming a conductive film over the semiconductor film; a third step of forming a first resist mask over the conductive film and etching the conductive film to form a first conductive layer and to expose a top surface of the semiconductor film that is not covered with the first conductive layer; and a fourth step of forming a second resist mask that covers a top surface and a side surface of the first conductive layer and part of the top surface of the semiconductor film and etching the semiconductor film to form a semiconductor layer and to expose a top surface of the insulating layer that is not covered with the semiconductor layer.

公开(公告)号：US20240138183A1

公开(公告)日：2024-04-25

申请号：US18373324

申请日：2023-09-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasutaka NAKAZAWA ,  Takayuki OHIDE ,  Naoto GOTO ,  Hiroki ADACHI ,  Satoru IDOJIRI ,  Hayato YAMAWAKI ,  Kenichi OKAZAKI ,  Sachiko KAWAKAMI

IPC: H10K59/12 ,  H10K59/122

CPC classification number: H10K59/1201 ,  H10K59/122 ,  H10K85/636

Abstract: A method for manufacturing a novel display apparatus is provided. The method includes a first step of forming a first electrode, a second electrode, and a first gap over an insulating film, a second step of forming a first film over the second electrode; a third step of forming a first layer overlapping with the first electrode, a fourth step of removing the first film by an etching method to form a first unit overlapping with the first electrode, a fifth step of removing a surface of the second electrode, a sixth step of forming a second film over the first layer and the second electrode, a seventh step of forming a second layer overlapping with the second electrode, and an eighth step of removing the second film by an etching method using the second layer to form a second unit overlapping with the second electrode and a second gap.

公开(公告)号：US20240244887A1

公开(公告)日：2024-07-18

申请号：US18390937

申请日：2023-12-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasutaka NAKAZAWA ,  Naoto GOTO ,  Kenichi OKAZAKI ,  Takayuki OHIDE

IPC: H10K59/122 ,  H10K59/12 ,  H10K59/80

CPC classification number: H10K59/122 ,  H10K59/1201 ,  H10K59/80515

Abstract: A method for manufacturing a novel display device that is highly convenient, useful, or reliable is to be provided. A first film is formed over a first electrode and a second electrode in a second step in the manufacturing method; a second film is formed over the first film in a third step; a third film is formed over the second film by a CVD method in a fourth step; part of the third film located above the second electrode is removed by an etching method to form a first layer overlapping with the first electrode in a fifth step; and part of the second film and part of the first film each located above the second electrode are removed by an etching method using the first layer to form a second layer and a first unit each overlapping with the first electrode in a sixth step.

公开(公告)号：US20180081465A1

公开(公告)日：2018-03-22

申请号：US15697738

申请日：2017-09-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiharu HIRAKATA ,  Koichi TAKESHIMA ,  Takayuki OHIDE ,  Kenji SHINOZAKI ,  Kanpei KOJIMA

IPC: G06F3/044 ,  G09G3/36

Abstract: A display panel and the like with a novel structure are provided. In the display panel, a first functional layer includes a pixel circuit and a first insulating film. A second functional layer includes a coloring film and a second insulating film. The first insulating film and the second insulating film each have a thickness of 0.5 μm to 3 μm and a Young's modulus of 3 GPa to 12 GPa. A sealing material is provided between a first base and a second base. A structure body is provided between the first base and the second base, and keeps a predetermined gap between the first and second bases. A pixel is surrounded by the first base, the second base, and the sealing material. A display element in the pixel is electrically connected to a pixel circuit and overlaps with a coloring film and a liquid crystal material.

公开(公告)号：US20160020355A1

公开(公告)日：2016-01-21

申请号：US14800892

申请日：2015-07-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tomoya AOYAMA ,  Ryu KOMATSU ,  Takayuki OHIDE

IPC: H01L33/00 ,  H05K3/06

CPC classification number: H01L33/005 ,  F21S6/00 ,  F21Y2105/10 ,  F21Y2115/10 ,  G02B6/00 ,  G02F1/1336 ,  G02F2001/133614 ,  G02F2202/108 ,  H01L21/76825 ,  H01L25/0753 ,  H01L51/0097 ,  H01L2924/0002 ,  H05K1/189 ,  H05K3/323 ,  H01L2924/00

Abstract: A method for manufacturing a circuit board includes a first process, a second process, a third process, and a fourth process. The first process includes a step of providing a circuit and an electrode over a first surface of a first substrate. The second process includes a step of providing a reflective layer on the first surface side of the first substrate or a second surface side of a second substrate. The third process includes a step of attaching the first surface and the second surface to each other with a bonding layer therebetween to face each other so that the reflective layer overlaps with the electrode and the reflective layer surrounds part of the electrode. The fourth process includes a step of irradiating at least part of the reflective layer with laser light from a side opposite to the electrode.

Abstract translation: 一种电路板的制造方法包括第一工序，第二工序，第三工序及第四工序。 第一工艺包括在第一衬底的第一表面上提供电路和电极的步骤。 第二工艺包括在第一衬底的第一表面侧或第二衬底的第二表面侧上提供反射层的步骤。 第三工艺包括将第一表面和第二表面彼此连接的步骤，其间的结合层彼此面对，使得反射层与电极重叠，并且反射层围绕电极的一部分。 第四工艺包括从与电极相对的一侧用激光照射反射层的至少一部分的步骤。