公开(公告)号：US20200295232A1

公开(公告)日：2020-09-17

申请号：US16889525

申请日：2020-06-01

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon CHAE ,  Jong Min JANG ,  Won Young ROH ,  Dae Woong SUH ,  Min Woo KANG ,  Joon Sub LEE ,  Hyun A. KIM

IPC: H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/00 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L33/12 ,  H01L33/06 ,  H01L33/32 ,  H01L33/20 ,  H01L33/38

Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.

公开(公告)号：US20190341527A1

公开(公告)日：2019-11-07

申请号：US16511921

申请日：2019-07-15

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon CHAE ,  Jong Min JANG ,  Won Young ROH ,  Dae Woong SUH ,  Min Woo KANG ,  Joon Sub LEE ,  Hyun A. KIM

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/20 ,  H01L33/44 ,  H01L33/46 ,  H01L33/00 ,  H01L33/32 ,  H01L33/06 ,  H01L33/12 ,  H01L33/62 ,  H01L33/60 ,  H01L33/48

Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.

公开(公告)号：US20210159266A1

公开(公告)日：2021-05-27

申请号：US17163629

申请日：2021-02-01

Applicant: Seoul Viosys Co., Ltd.

Inventor： Se Hee OH ,  Jong Kyu KIM ,  Joon Sub LEE

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/40

Abstract: A chip-scale package type light emitting diode is provided. In the light emitting diode according to one embodiment, an opening exposing a pad metal layer is separated from an opening of a lower insulation layer which exposes an ohmic reflection layer formed on a mesa. Therefore, it is possible to prevent solder, particularly Sn, from diffusing and contaminating the ohmic reflection layer.

公开(公告)号：US20190189867A1

公开(公告)日：2019-06-20

申请号：US16266717

申请日：2019-02-04

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon CHAE ,  Jong Min JANG ,  Won Young ROH ,  Dae Woong SUH ,  Min Woo KANG ,  Joon Sub LEE ,  Hyun A. KIM ,  Kyoung Wan KIM ,  Chang Yeon KIM

IPC: H01L33/50 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L33/38 ,  H01L33/40 ,  H01L33/20

Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.