公开(公告)号：US20160303272A1

公开(公告)日：2016-10-20

申请号：US15193788

申请日：2016-06-27

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyun KOO ,  Dae Woong SUH ,  Young Hwan SON ,  Seong Min LEE ,  Jae Seon YI ,  Jung Yeol PARK ,  Sang Hee CHO ,  Ju Won YOO ,  Sung Lim CHO ,  Jong Rack KIM

IPC: A61L9/20 ,  F24F3/16

CPC classification number: A61L9/205 ,  A61L2/10 ,  A61L2202/23 ,  A61L2209/12 ,  A61L2209/14 ,  A61L2209/15 ,  F24F3/1603 ,  F24F3/166 ,  F24F2003/1625 ,  F24F2003/1667

Abstract: An air purifying apparatus according to an embodiment includes a body having first and second conduits through which a flow of air is generated from an air inlet to an air outlet, an ultraviolet light emitting diode part and a first filter part disposed within the first conduit, and a second filter part disposed within the second conduit.

Abstract translation: 根据实施例的空气净化装置包括具有第一和第二管道的主体，通过该主体从空气入口到出气口产生空气流，紫外发光二极管部分和设置在第一导管内的第一过滤器部分， 以及设置在第二导管内的第二过滤器部件。

公开(公告)号：US20150287900A1

公开(公告)日：2015-10-08

申请号：US14744969

申请日：2015-06-19

Applicant: Seoul Viosys Co., Ltd.

Inventor： Kyu Ho LEE ,  Chang Hoon KIM ,  Jae Ryang CHOI ,  Dae Woong SUH

IPC: H01L33/62 ,  H01L33/46 ,  H01L33/00 ,  H01L33/32 ,  H01L33/06 ,  H01L33/40

CPC classification number: H01L33/62 ,  H01L24/17 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01L2924/01029 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A method of manufacturing a light-emitting diode (LED) chip including forming an LED on a first substrate, the LED including an N-type and a P-type semiconductor layer, the LED being formed to expose surfaces of the N-type and P-type semiconductor layers, forming bumps respectively electrically connected to the N-type and P-type semiconductor layers, forming electrode pads corresponding to the bumps on a second substrate, aligning the LED chip and the second substrate so that the bumps respectively correspond to the electrode pads, and increasing a temperature of the bumps to a first temperature, applying a pressure to the first and second substrates, and increasing the temperature of the bumps to a second temperature for a first time period while maintaining the pressure, and maintaining the second temperature from the first time period to a second time period while maintaining the pressure, and then releasing the pressure and cooling the bumps.

Abstract translation: 一种制造包括在第一基板上形成LED的发光二极管（LED）芯片的方法，所述LED包括N型和P型半导体层，所述LED形成为暴露所述N型和 形成分别电连接到N型和P型半导体层的凸块，形成与第二衬底上的凸块相对应的电极焊盘，使LED芯片和第二衬底对准，使得凸起分别对应于 电极焊盘，并且将凸块的温度升高到第一温度，向第一和第二基板施加压力，并且在保持压力的同时将凸块的温度第一时间提高到第二温度，并且保持 第二温度从第一时间段到第二时间段同时保持压力，然后释放压力并冷却凸块。

公开(公告)号：US20200295232A1

公开(公告)日：2020-09-17

申请号：US16889525

申请日：2020-06-01

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon CHAE ,  Jong Min JANG ,  Won Young ROH ,  Dae Woong SUH ,  Min Woo KANG ,  Joon Sub LEE ,  Hyun A. KIM

IPC: H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/00 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L33/12 ,  H01L33/06 ,  H01L33/32 ,  H01L33/20 ,  H01L33/38

Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.

公开(公告)号：US20190341527A1

公开(公告)日：2019-11-07

申请号：US16511921

申请日：2019-07-15

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon CHAE ,  Jong Min JANG ,  Won Young ROH ,  Dae Woong SUH ,  Min Woo KANG ,  Joon Sub LEE ,  Hyun A. KIM

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/20 ,  H01L33/44 ,  H01L33/46 ,  H01L33/00 ,  H01L33/32 ,  H01L33/06 ,  H01L33/12 ,  H01L33/62 ,  H01L33/60 ,  H01L33/48

Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.

公开(公告)号：US20190189867A1

公开(公告)日：2019-06-20

申请号：US16266717

申请日：2019-02-04

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon CHAE ,  Jong Min JANG ,  Won Young ROH ,  Dae Woong SUH ,  Min Woo KANG ,  Joon Sub LEE ,  Hyun A. KIM ,  Kyoung Wan KIM ,  Chang Yeon KIM

IPC: H01L33/50 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L33/38 ,  H01L33/40 ,  H01L33/20

Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.

公开(公告)号：US20170309853A1

公开(公告)日：2017-10-26

申请号：US15513150

申请日：2015-09-01

Applicant: Seoul Viosys co., Ltd.

Inventor： Jong Min JANG ,  Jong Hyeon CHAE ,  Dae Woong SUH

IPC: H01L51/50 ,  H01L51/44 ,  H01L33/46 ,  H01L33/00 ,  H01L33/44

CPC classification number: H01L51/504 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L51/442

Abstract: A light emitting device and method of fabricating the same using a wafer level package process are disclosed. The light emitting device has improved heat dissipation to prevent damage by heat, thereby achieving improvement in reliability and luminous efficacy. In addition, the light emitting device has a small difference in coefficients of thermal expansion and thus can reduce stress applied to a light emitting structure to prevent damage to the light emitting structure, thereby achieving improvement in reliability and luminous efficacy.

公开(公告)号：US20190148597A1

公开(公告)日：2019-05-16

申请号：US16225269

申请日：2018-12-19

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon CHAE ,  Chang Yeon KIM ,  Joon Sup LEE ,  Dae Woong SUH ,  Won Young ROH ,  Ju Yong PARK ,  Seung Hyun KIM

IPC: H01L33/38 ,  H01L27/15

Abstract: A light emitting element according to an embodiment of the present invention comprises a first conductive-type semiconductor layer including a contact region on the lower surface thereof, a light emitting structure which includes a mesa including a second conductive-type semiconductor layer and an active layer, a second electrode, a first insulation layer, an electrode cover layer, a first electrode, a second insulation layer, and a support structure. In addition, the mesa may include a body part and a plurality of protrusion parts protruding from the body part, the contact region may be disposed between the protrusion parts, and a part of the contact region may overlap with a second metal bulk in the vertical direction. Accordingly, current spreading efficiency can be improved, and thus luminance efficiency can be more improved.

公开(公告)号：US20190019923A1

公开(公告)日：2019-01-17

申请号：US16125769

申请日：2018-09-10

Applicant: SEOUL VIOSYS CO., LTD

Inventor： Chi Hyun IN ,  Jun Yong PARK ,  Kyu Ho LEE ,  Dae Woong SUH ,  Jong Hyeon CHAE ,  Chang Hoon KIM ,  Sung Hyun LEE

IPC: H01L33/48 ,  H01L33/20 ,  H01L33/50 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L33/486 ,  H01L33/20 ,  H01L33/44 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0033

Abstract: Disclosed herein are a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes: a substrate, a light-emitting layer disposed on a surface of the substrate and including a first type semiconductor layer, an active layer, and a second type semiconductor layer, a first bump disposed on the first type semiconductor layer and a second bump disposed the second type semiconductor layer, a protective layer covering at least the light-emitting layer, and a first bump pad and a second bump pad disposed on the protective layer and connected to the first bump and the second bump, respectively.