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公开(公告)号：US20170148954A1
公开(公告)日：2017-05-25
申请号：US15422575
申请日：2017-02-02
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon CHAE , Chung Hoon LEE , Daewoong SUH , Jong Min JANG , Joon Sup LEE , Won Young ROH , Min Woo KANG , Hyun A KIM , Seon Min BAE
CPC classification number: H01L33/44 , H01L27/153 , H01L33/005 , H01L33/007 , H01L33/08 , H01L33/20 , H01L33/387 , H01L33/405 , H01L2933/0025
Abstract: A light emitting device including a light emitting structure disposed on one surface of a substrate and a transflective portion disposed on the other surface of the substrate. The transflective portion and the substrate have different indexes of refraction from one another.
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公开(公告)号：US20190148597A1
公开(公告)日：2019-05-16
申请号：US16225269
申请日：2018-12-19
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Hyeon CHAE , Chang Yeon KIM , Joon Sup LEE , Dae Woong SUH , Won Young ROH , Ju Yong PARK , Seung Hyun KIM
Abstract: A light emitting element according to an embodiment of the present invention comprises a first conductive-type semiconductor layer including a contact region on the lower surface thereof, a light emitting structure which includes a mesa including a second conductive-type semiconductor layer and an active layer, a second electrode, a first insulation layer, an electrode cover layer, a first electrode, a second insulation layer, and a support structure. In addition, the mesa may include a body part and a plurality of protrusion parts protruding from the body part, the contact region may be disposed between the protrusion parts, and a part of the contact region may overlap with a second metal bulk in the vertical direction. Accordingly, current spreading efficiency can be improved, and thus luminance efficiency can be more improved.
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公开(公告)号：US20200176636A1
公开(公告)日：2020-06-04
申请号：US16782969
申请日：2020-02-05
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon CHAE , Joon Sup LEE , Daewoong SUH , Won Young ROH , Min Woo KANG , Jong Min JANG , Se Hee OH , Hyun A KIM
IPC: H01L33/38
Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
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公开(公告)号：US20160343911A1
公开(公告)日：2016-11-24
申请号：US15226304
申请日：2016-08-02
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon CHAE , Jong Min JANG , Won Young ROH , Daewoong SUH , Dae Sung CHO , Joon Sup LEE , Kyu Ho LEE , Chi Hyun IN
CPC classification number: H01L33/405 , H01L33/0075 , H01L33/08 , H01L33/12 , H01L33/14 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/62 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
Abstract: A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer.
Abstract translation: 一种发光二极管，包括第一导电类型半导体层，设置在第一导电类型半导体层上的台面，包括有源层和第二导电类型半导体层的台面，设置在台面上并被配置为欧姆的反射电极 与第二导电型半导体层接触，设置在台面和反射电极上的电流扩散层，电流扩展层包括构造成与第一导电类型半导体层的上表面欧姆接触的第一部分， 与设置在第一和第二n接触区域之间的台面的第二n接触区域间隔开的第一n接触区域以及包括在第一和第二n-接触区域之间暴露反射电极的第一开口的绝缘层 。 第一和第二n接触区域具有暴露第一导电类型半导体层的第二开口。
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公开(公告)号：US20200098949A1
公开(公告)日：2020-03-26
申请号：US16660460
申请日：2019-10-22
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Hyeon CHAE , Joon Sup LEE , Won Young ROH , Min Woo KANG , Jong Min JANG , Hyun A KIM , Daewoong SUH
IPC: H01L33/44 , H01L23/00 , H01L33/24 , H01L33/14 , H01L33/10 , H01L33/62 , H01L33/54 , H01L33/40 , H01L27/15 , H01L33/20 , H01L33/38 , H01L25/075 , H01L33/08
Abstract: A light emitting diode apparatus includes a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a mesa, a lower insulating layer, a first pad and a second pad. The substrate has a first surface and a second surface opposite to the first surface. The first conductivity type semiconductor layer is disposed on the first surface of the substrate. The mesa is disposed on the first conductive semiconductor layer and has an active layer and the second conductive semiconductor layer. A peripheral edge of the first conductive semiconductor layer is exposed. The lower insulating layer covers the mesa and the first conductive semiconductor layer and has a plurality of first openings exposing the first conductive semiconductor layer along a peripheral edge of the substrate.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20190189867A1
公开(公告)日：2019-06-20
申请号：US16266717
申请日：2019-02-04
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Hyeon CHAE , Jong Min JANG , Won Young ROH , Dae Woong SUH , Min Woo KANG , Joon Sub LEE , Hyun A. KIM , Kyoung Wan KIM , Chang Yeon KIM
Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.
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公开(公告)号：US20150325752A1
公开(公告)日：2015-11-12
申请号：US14807290
申请日：2015-07-23
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon CHAE , Chung Hoon LEE , Daewoong SUH , Jong Min JANG , Joon Sup LEE , Won Young ROH , Min Woo KANG , Hyun A KIM , Seon Min BAE
CPC classification number: H01L33/44 , H01L27/153 , H01L33/005 , H01L33/007 , H01L33/08 , H01L33/20 , H01L33/387 , H01L33/405 , H01L2933/0025
Abstract: A light emitting device having a wide beam angle and a method of fabricating the same. The light emitting device includes a light emitting structure, a substrate disposed on the light emitting structure, and an anti-reflection layer covering side surfaces of the light emitting structure and the substrate, and at least a portion of an upper surface of the substrate is exposed.
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公开(公告)号：US20210005785A1
公开(公告)日：2021-01-07
申请号：US17024167
申请日：2020-09-17
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon CHAE , Joon Sup LEE , Daewoong SUH , Won Young ROH , Min Woo KANG , Jong Min JANG , Se Hee OH , Hyun A KIM
IPC: H01L33/38
Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
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公开(公告)号：US20200295232A1
公开(公告)日：2020-09-17
申请号：US16889525
申请日：2020-06-01
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Hyeon CHAE , Jong Min JANG , Won Young ROH , Dae Woong SUH , Min Woo KANG , Joon Sub LEE , Hyun A. KIM
IPC: H01L33/40 , H01L33/44 , H01L33/46 , H01L33/00 , H01L33/48 , H01L33/60 , H01L33/62 , H01L33/12 , H01L33/06 , H01L33/32 , H01L33/20 , H01L33/38
Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.
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公开(公告)号：US20190341527A1
公开(公告)日：2019-11-07
申请号：US16511921
申请日：2019-07-15
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Hyeon CHAE , Jong Min JANG , Won Young ROH , Dae Woong SUH , Min Woo KANG , Joon Sub LEE , Hyun A. KIM
IPC: H01L33/40 , H01L33/38 , H01L33/20 , H01L33/44 , H01L33/46 , H01L33/00 , H01L33/32 , H01L33/06 , H01L33/12 , H01L33/62 , H01L33/60 , H01L33/48
Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.
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