公开(公告)号：US20140167086A1

公开(公告)日：2014-06-19

申请号：US14105919

申请日：2013-12-13

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Min JANG ,  Kyu-Ho LEE ,  Chang Suk HAN ,  Hwa Mok KIM ,  Daewoong SUH ,  Chi Hyun IN ,  Jong Hyeon CHAE

IPC: H01L33/22 ,  H01L21/02 ,  H01L33/00 ,  H01L29/06

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/0657 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32

Abstract: An epitaxial wafer having a void for separation of a substrate and a semiconductor device fabricated using the same. The epitaxial wafer includes a substrate, a mask pattern disposed on the substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern. The epitaxial layer includes a void disposed on the masking region.The epitaxial layer can be separated from the growth substrate by applying chemical lift-off or stress lift-off, at the void.

Abstract translation: 具有用于分离衬底的空隙的外延晶片和使用其制造的半导体器件。 外延晶片包括衬底，设置在衬底上并包括掩模区域和开口区域的掩模图案以及覆盖掩模图案的外延层。 外延层包括设置在掩蔽区域上的空隙。 通过在空隙处施加化学剥离或应力剥离，外延层可以与生长衬底分离。

公开(公告)号：US20150084061A1

公开(公告)日：2015-03-26

申请号：US14496998

申请日：2014-09-25

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ki Yon PARK ,  Hwa Mok KIM ,  Kyu-Ho LEE ,  Sung Hyun LEE ,  Hyung Kyu KIM

IPC: H01L31/108 ,  H01L31/18 ,  H01L31/0304

CPC classification number: H01L31/108 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/1848 ,  H01L31/1856 ,  Y02E10/544 ,  Y02P70/521

Abstract: A photo-detecting device includes a first nitride layer, a low-current blocking layer disposed on the first nitride layer, a light absorption layer disposed on the low-current blocking layer, and a Schottky junction layer disposed on the light-absorption layer. The low-current blocking layer includes a multilayer structure.

Abstract translation: 光检测装置包括第一氮化物层，设置在第一氮化物层上的低电流阻挡层，设置在低电流阻挡层上的光吸收层和设置在光吸收层上的肖特基结层。 低电流阻挡层包括多层结构。