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    LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME
    7.
    发明申请
    LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME 审中-公开

    公开(公告)号：US20200176636A1

    公开(公告)日：2020-06-04

    申请号：US16782969

    申请日：2020-02-05

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Hyeon CHAE ,  Joon Sup LEE ,  Daewoong SUH ,  Won Young ROH ,  Min Woo KANG ,  Jong Min JANG ,  Se Hee OH ,  Hyun A KIM

    IPC: H01L33/38

    Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

    LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE PACKAGE
    9.
    发明申请
    LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE PACKAGE 审中-公开
    发光二极管和发光二极管封装

    公开(公告)号：US20160343911A1

    公开(公告)日：2016-11-24

    申请号：US15226304

    申请日：2016-08-02

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Hyeon CHAE ,  Jong Min JANG ,  Won Young ROH ,  Daewoong SUH ,  Dae Sung CHO ,  Joon Sup LEE ,  Kyu Ho LEE ,  Chi Hyun IN

    IPC: H01L33/40 ,  H01L33/46 ,  H01L33/42 ,  H01L33/20 ,  H01L33/32 ,  H01L33/12

    CPC classification number: H01L33/405 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/12 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058

    Abstract: A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer.

    Abstract translation: 一种发光二极管，包括第一导电类型半导体层，设置在第一导电类型半导体层上的台面，包括有源层和第二导电类型半导体层的台面，设置在台面上并被配置为欧姆的反射电极 与第二导电型半导体层接触，设置在台面和反射电极上的电流扩散层，电流扩展层包括构造成与第一导电类型半导体层的上表面欧姆接触的第一部分， 与设置在第一和第二n接触区域之间的台面的第二n接触区域间隔开的第一n接触区域以及包括在第一和第二n-接触区域之间暴露反射电极的第一开口的绝缘层 。 第一和第二n接触区域具有暴露第一导电类型半导体层的第二开口。

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