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    METHOD OF FABRICATING A NITRIDE SUBSTRATE
    1.
    发明申请
    METHOD OF FABRICATING A NITRIDE SUBSTRATE 有权
    制备氮化物基板的方法

    公开(公告)号：US20150364319A1

    公开(公告)日：2015-12-17

    申请号：US14833732

    申请日：2015-08-24

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Ki Yon PARK ,  Hwa Mok KIM ,  Chang Suk HAN ,  Hyo Shik CHOI ,  Mi So KO

    IPC: H01L21/02 ,  H01L21/308 ,  H01L29/20 ,  H01L21/306

    CPC classification number: H01L21/0254 ,  C30B25/00 ,  C30B25/02 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02002 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/30621 ,  H01L21/3081 ,  H01L21/3086 ,  H01L29/2003

    Abstract: A method of fabricating a nitride substrate including preparing a growth substrate and disposing a sacrificial layer on the growth substrate. The sacrificial layer includes a nitride horizontal etching layer including an indium-based nitride and an upper nitride sacrificial layer formed on the nitride horizontal etching layer. The method of fabricating the nitride substrate also includes horizontally etching the nitride horizontal etching layer, forming at least one etching hole at least partially through the upper nitride sacrificial layer such that the at least one etching hole expands in the nitride horizontal etching layer in a horizontal direction during horizontal etching of the nitride horizontal etching layer, forming a nitride epitaxial layer on the upper nitride sacrificial layer by hydride vapor phase epitaxy (HVPE) and separating the nitride epitaxial layer from the growth substrate at the nitride horizontal etching layer.

    Abstract translation: 一种制造氮化物衬底的方法，包括制备生长衬底并在生长衬底上设置牺牲层。 牺牲层包括氮化物水平蚀刻层，其包括形成在氮化物水平蚀刻层上的铟基氮化物和上部氮化物牺牲层。 制造氮化物衬底的方法还包括水平蚀刻氮化物水平蚀刻层，至少部分地通过上部氮化物牺牲层形成至少一个蚀刻孔，使得至少一个蚀刻孔在氮化物水平蚀刻层中在水平方向上扩展 在氮化物水平蚀刻层的水平蚀刻期间，通过氢化物气相外延（HVPE）在上部氮化物牺牲层上形成氮化物外延层，并在氮化物水平蚀刻层从生长衬底分离氮化物外延层。

    UV LIGHT EMITTING DEVICE
    4.
    发明申请
    UV LIGHT EMITTING DEVICE 审中-公开
    紫外线发光装置

    公开(公告)号：US20150333218A1

    公开(公告)日：2015-11-19

    申请号：US14811253

    申请日：2015-07-28

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Chang Suk HAN ,  Hwa Mok Kim ,  Hyo Shik Choi ,  Mi So Ko ,  A Ram Cha Lee

    IPC: H01L33/06 ,  H01L33/32 ,  H01L33/14 ,  H01L33/00 ,  H01L33/12

    CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/04 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32

    Abstract: A UV light emitting device includes: an n-type contact layer including an AlGaN layer or an AlInGaN layer; a p-type contact layer including a AlGaN layer or an AlInGaN layer; and an active layer of a multi-quantum well structure placed between the n-type contact layer and the p-type contact layer. The active area of the multi-quantum well structure includes barrier layers and well layers. The well layers include electrons and holes present according to probability distributions thereof. The barrier layers are formed of AlInGaN or AlGaN and have an Al content of 10% to 30%. At least one of the barrier layers disposed between the well layers has a smaller thickness than of the well layers and at least one of the barrier layers placed between the well layers has a thickness and a band gap preventing electrons and holes injected into and confined in a well layer adjacent to the barrier layer from spreading into another adjacent well layer.

    Abstract translation: UV发光器件包括：包括AlGaN层或AlInGaN层的n型接触层; 包括AlGaN层或AlInGaN层的p型接触层; 以及放置在n型接触层和p型接触层之间的多量子阱结构的有源层。 多量子阱结构的有源区包括阻挡层和阱层。 阱层包括根据其概率分布存在的电子和空穴。 阻挡层由AlInGaN或AlGaN形成，Al含量为10〜30％。 设置在阱层之间的阻挡层中的至少一个具有比阱层更薄的厚度，并且位于阱层之间的至少一个势垒层具有防止电子和空穴注入并限制在阱层中的厚度和带隙 与阻挡层相邻的阱层扩展到另一个相邻的阱层。

    NEAR UV LIGHT EMITTING DEVICE
    5.
    发明申请
    NEAR UV LIGHT EMITTING DEVICE 有权
    靠近紫外线发光装置

    公开(公告)号：US20150041760A1

    公开(公告)日：2015-02-12

    申请号：US14526110

    申请日：2014-10-28

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Chang Suk HAN ,  Hwa Mok Kim ,  Hyo Shik Choi ,  Mi So Ko ,  A Ram Cha Lee

    IPC: H01L33/32 ,  H01L33/06

    CPC classification number: H01L33/32 ,  H01L33/04 ,  H01L33/06 ,  H01L33/14

    Abstract: Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area.

    Abstract translation: 公开了一种近紫外发光装置。 发光器件包括n型接触层，p型接触层，设置在n型接触层和p型接触层之间的多量子阱结构的有源区，以及至少一个电子 控制层设置在n型接触层和有源区之间。 n型接触层和p型接触层中的每一个包括AlInGaN或AlGaN层，并且电子控制层由AlInGaN或AlGaN形成。 此外，电子控制层包含比相邻层更大量的Al，以阻止电子流入有源区域。 因此，电子迁移率恶化，从而提高有源区域中的电子和空穴的复合率。

    NEAR UV LIGHT EMITTING DEVICE
    6.
    发明申请
    NEAR UV LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：US20160225950A1

    公开(公告)日：2016-08-04

    申请号：US15096252

    申请日：2016-04-11

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Chang Suk HAN ,  Hwa Mok KIM ,  Hyo Shik CHOI ,  Mi So KO ,  A Ram Cha LEE

    IPC: H01L33/14 ,  H01L33/32 ,  H01L33/06

    CPC classification number: H01L33/14 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32

    Abstract: Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area.

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