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1.发明授权公开(公告)号：US10007181B2
公开(公告)日：2018-06-26
申请号：US14841824
申请日：2015-09-01
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0048 , G03F7/0392 , G03F7/11 , G03F7/168
摘要： A chemically amplified positive resist dry film to be formed on a support film contains 5-40 wt % of a component having a boiling point of 55-250° C. under atmospheric pressure. The resist dry film having flexibility and dimensional stability can be prepared through simple steps. The resist dry film can be efficiently and briefly laid on an article and processed to form a pattern.
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公开(公告)号：US09777102B2
公开(公告)日：2017-10-03
申请号：US14560358
申请日：2014-12-04
IPC分类号： G03F7/023 , C08G8/28 , C08G14/10 , G03F7/038 , G03F7/022 , C08G8/00 , C08L61/00 , C08L61/04 , C08L61/20
CPC分类号： C08G8/28 , C08G8/00 , C08G14/10 , C08L61/00 , C08L61/04 , C08L61/20 , G03F7/0226 , G03F7/023 , G03F7/0236 , G03F7/038 , G03F7/0382
摘要： A modified novolak phenolic resin is obtained by reacting a novolak phenolic resin containing at least 50 wt % of p-cresol with a crosslinker. This method increases the molecular weight of the existing novolak phenolic resin containing at least 50 wt % of p-cresol to such a level that the resulting modified novolak phenolic resin has heat resistance enough for the photoresist application.
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公开(公告)号：US20170115567A1
公开(公告)日：2017-04-27
申请号：US15334660
申请日：2016-10-26
摘要： A chemically amplified positive resist composition is provided comprising a specific alkali-soluble polymer adapted to turn soluble in alkaline aqueous solution under the action of acid as base resin, an alkali-soluble polymer, and a photoacid generator in an organic solvent. The composition forms a resist film which can be briefly developed to form a pattern at a high sensitivity without generating dimples in pattern sidewalls.
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4.发明授权公开(公告)号：US09519217B2
公开(公告)日：2016-12-13
申请号：US14732026
申请日：2015-06-05
发明人： Katsuya Takemura , Yoshinori Hirano
CPC分类号： G03F7/0392 , G03F7/0397 , G03F7/16 , G03F7/20 , G03F7/38 , G03F7/427
摘要： A chemically amplified positive resist composition is provided comprising a substantially alkali-insoluble polymer having an acid labile group-protected acidic functional group, a poly(meth)acrylate polymer having Mw of 1,000-500,000, and an acid generator in a solvent. The composition forms on a substrate a resist film of 5-100 μm thick which can be briefly developed to form a pattern at a high sensitivity and a high degree of removal or dissolution to bottom.
摘要翻译： 提供化学放大的正性抗蚀剂组合物，其包含具有酸不稳定基团保护的酸性官能团的基本上不溶于碱的聚合物，Mw为1,000-500,000的聚（甲基）丙烯酸酯聚合物和在溶剂中的酸发生剂。 组合物在基材上形成5-100μm厚的抗蚀剂膜，其可以短暂地显影以形成高灵敏度和高度去除或溶解于底部的图案。
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5.发明申请CHEMICALLY AMPLIFIED POSITIVE RESIST DRY FILM, DRY FILM LAMINATE AND METHOD OF PREPARING LAMINATE 有权化学阳离子电阻干膜，干膜层压板及其制备方法公开(公告)号：US20160070170A1
公开(公告)日：2016-03-10
申请号：US14841824
申请日：2015-09-01
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0048 , G03F7/0392 , G03F7/11 , G03F7/168
摘要： A chemically amplified positive resist dry film to be formed on a support film contains 5-40 wt % of a component having a boiling point of 55-250° C. under atmospheric pressure. The resist dry film having flexibility and dimensional stability can be prepared through simple steps. The resist dry film can be efficiently and briefly laid on an article and processed to form a pattern.
摘要翻译： 在支撑膜上形成的化学放大正型抗蚀剂干膜在大气压下含有5-40重量％的沸点为55-250℃的组分。 具有柔软性和尺寸稳定性的抗蚀剂干膜可以通过简单的步骤制备。 抗蚀剂干膜可以有效地并短暂地放置在制品上并加工形成图案。
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公开(公告)号：US20220382157A1
公开(公告)日：2022-12-01
申请号：US17770140
申请日：2020-09-24
发明人： Yoshinori Hirano , Satoshi Asai , Takahiro Goi
摘要： Provided is a photosensitive resin composition which comprises (A) a polymer comprising repeating units represented by formula (A1) and at least one kind of repeating units selected from among repeating units represented by formula (A2) and repeating units represented by formula (A3), (B) an epoxy compound containing four or more epoxy groups on average in the molecule, (C) a photoacid generator, (D) a benzotriazole compound and/or an imidazole compound, and (E) an organic solvent.
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公开(公告)号：US10534262B2
公开(公告)日：2020-01-14
申请号：US15334660
申请日：2016-10-26
摘要： A chemically amplified positive resist composition is provided comprising a specific alkali-soluble polymer adapted to turn soluble in alkaline aqueous solution under the action of acid as base resin, an alkali-soluble polymer, and a photoacid generator in an organic solvent. The composition forms a resist film which can be briefly developed to form a pattern at a high sensitivity without generating dimples in pattern sidewalls.
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公开(公告)号：US10514601B2
公开(公告)日：2019-12-24
申请号：US15819532
申请日：2017-11-21
发明人： Yoshinori Hirano , Satoshi Asai , Kazunori Kondo
摘要： A laminate comprising a thermoplastic film and a chemically amplified positive resist film thereon is provided, the resist film comprising (A) a base polymer having a hydroxyphenyl group and a protective group, the polymer turning alkali soluble as a result of the protective group being eliminated under the action of acid, (B) a photoacid generator, (C) an organic solvent, and (D) a polymer having an ester bond in its backbone. The resist film may be transferred to a stepped support without forming voids.
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公开(公告)号：US20180299774A1
公开(公告)日：2018-10-18
申请号：US15950630
申请日：2018-04-11
发明人： Yoshinori Hirano , Satoshi Asai , Kazunori Kondo
摘要： A laminate comprising a thermoplastic film and a positive resist film is provided, the positive resist film comprising (A) a novolak resin-naphthoquinone diazide (NQD) base resin composition, (B) a polyester, and (C) 3-30 wt % of an organic solvent. The resist film may be transferred to a stepped support without forming voids.
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公开(公告)号：US09650538B2
公开(公告)日：2017-05-16
申请号：US14305767
申请日：2014-06-16
CPC分类号： C09D163/04 , B81C1/00619 , B81C2201/0108 , G03F7/0226 , G03F7/0236 , G03F7/30 , G03F7/40 , G03F7/70466
摘要： A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, providing the inorganic material film with an aperture, and etching away the sacrificial film pattern through the aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) forming a sacrificial film using a composition comprising a cresol novolac resin and a crosslinker, (B) exposing patternwise the film to first high-energy radiation, (C) developing, and (D) exposing the sacrificial film pattern to second high-energy radiation and heat treating for thereby forming crosslinks within the cresol novolac resin.
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