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1.发明申请公开(公告)号：US20150062763A1
公开(公告)日：2015-03-05
申请号：US14513895
申请日：2014-10-14
Applicant: SHOWA DENKO K.K.
Inventor： Yoshimitsu ISHIHARA , Mina ONISHI , Yukihiko AZUMA
CPC classification number: H02H9/06 , H01C7/1006 , H01C7/12 , H01C7/123 , H01C17/06526 , H01C17/06553 , H01L27/0288 , H01T4/02 , H01T4/08 , H05K1/0259 , H05K1/167
Abstract: An electrostatic discharge protector including two electrodes for forming a discharge gap, and a discharge gap filling-member including a discharge gap filing composition filed in the discharge gap, the discharge gap filling composition contains metal particles (A) obtainable by metal particles with a hydrolyzed product of a metal alkoxide represented by the following formula (1) and a binder component (C), and the electrostatic discharge protector includes the composition; R—O-[M(OR)2—O—]n—R (1) wherein M is a metal atom, O is an oxygen atom, R is an alkyl group, all or a part of R's may be the same as or different each other, and n is an integer of 1 to 40. Also disclosed is an electronic circuit board including the electrostatic discharge protector and an electronic device.
Abstract translation: 一种静电放电保护器，包括用于形成放电间隙的两个电极和包括放电间隙中的放电间隙填充组合物的放电间隙填充构件，放电间隙填充组合物含有金属颗粒（A），其由具有水解的金属颗粒 由下式（1）表示的金属醇盐和粘合剂组分（C）的产物，静电放电保护剂包括组合物; R-O- [M（OR）2-O-] n -R（1）其中M是金属原子，O是氧原子，R是烷基，R的全部或部分可以与 或彼此不同，n为1〜40的整数。还公开了包括静电放电保护器和电子设备的电子电路板。
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公开(公告)号：US20170275171A1
公开(公告)日：2017-09-28
申请号：US15504856
申请日：2015-08-12
Applicant: SHOWA DENKO K.K.
Inventor： Yoshimitsu ISHIHARA , Hideaki HAMADA , Shigeru SHIMADA , Kazuhiko SATO , Masayasu IGARASHI , Hiroshi UCHIDA
IPC: C01B33/04 , B01J29/70 , B01J29/44 , B01J29/46 , B01J37/08 , B01J29/74 , B01J29/12 , B01J29/40 , B01J37/04
CPC classification number: C01B33/04 , B01J29/126 , B01J29/40 , B01J29/44 , B01J29/46 , B01J29/7007 , B01J29/7042 , B01J29/7407 , B01J29/7415 , B01J29/7484 , B01J29/7607 , B01J29/7615 , B01J29/7684 , B01J37/04 , B01J37/088 , B01J2229/186 , B01J2229/20
Abstract: An object of the present invention is to provide a method for producing oligosilane and in particular to provide a method that can efficiently produce oligosilane at lower temperatures and with an improved yield and selectivity. In the dehydrogenative coupling reaction of hydrosilane, oligosilane can be efficiently produced at an improved selectivity for oligosilane, and in particular at an improved selectivity for disilane, by carrying out the reaction in the presence of zeolite having pores with a minor diameter of at least 0.43 nm and a major diameter of not more than 0.69 nm.
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公开(公告)号：US20200283297A1
公开(公告)日：2020-09-10
申请号：US15998663
申请日：2017-02-14
Applicant: SHOWA DENKO K.K.
Inventor： Kiyoshi NOMURA , Hiroshi UCHIDA , Yoshimitsu ISHIHARA , Shigeru SHIMADA , Kazuhiko SATO , Masayasu IGARASHI
IPC: C01B33/04 , B01J35/10 , B01J35/08 , B01J21/04 , B01J29/16 , B01J29/48 , B01J29/40 , B01J29/78 , B01J29/26 , B01J29/69 , B01J37/00 , B01J37/08
Abstract: A method for producing an oligosilane which includes a reaction step of producing an oligosilane by dehydrogenative coupling of hydrosilane. The reaction step is carried out in the presence of a catalyst containing at least one transition element selected from the group consisting of Periodic Table group 3 transition elements, group 4 transition elements, group 5 transition elements, group 6 transition elements, and group 7 transition elements. Also disclosed is a method for producing a catalyst for dehydrogenative coupling that produces an oligosilane by dehydrogenative coupling of hydrosilane.
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公开(公告)号：US20190256361A1
公开(公告)日：2019-08-22
申请号：US16308323
申请日：2017-06-06
Applicant: SHOWA DENKO K.K.
Inventor： Kiyoshi NOMURA , Hiroshi UCHIDA , Yoshimitsu ISHIHARA , Yumiko NAKAJIMA , Shigeru SHIMADA , Kazuhiko SATO
Abstract: An object of the present invention is to provide an oligosilane production method with which a target oligosilane can be selectively produced. Oligosilanes can be efficiently produced at an improved selectivity for a target oligosilane by using, as a raw material, not only monosilane but also an oligosilane with a smaller number of silicon atoms than the target oligosilane or conversely an oligosilane with a larger number of silicon atoms than the target oligosilane.
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