Patent search ap:("SIEMENS AG") AND inv:"HERBERT SANDMANN" Page 1

1.

发明授权
Apparatus for doping and contacting semiconductor bodies 失效
Title translation: 用于掺杂和接触半导体器件的装置

公开(公告)号：US3261773A

公开(公告)日：1966-07-19

申请号：US17842862

申请日：1962-03-08

Applicant: SIEMENS AG

Inventor： HERBERT SANDMANN , RICHARD DOTZER

IPC: C25D3/44 , C25D3/54 , C25D7/12 , C30B31/04 , H01L21/00 , H01L21/288

CPC classification number: H01L21/2885 , C25D3/44 , C25D3/54 , C25D7/12 , C30B31/04 , H01L21/00

2.

发明授权
Process and apparatus for pyrolytic production of pure semiconductor material, preferably silicon 失效
Title translation: 用于热解生产纯半导体材料，优选硅的方法和装置

公开(公告)号：US3286685A

公开(公告)日：1966-11-22

申请号：US16875662

申请日：1962-01-25

Applicant: SIEMENS AG

Inventor： HERBERT SANDMANN , ULRICH RUCHA

IPC: C01B33/035 , C22B41/00 , C23C16/44

CPC classification number: C23C16/44 , C01B33/035 , C22B41/00

3.

发明授权
Process using an oxygen free electrolyte for doping and contacting semiconductor bodies 失效
Title translation: 使用无氧电解质掺杂和接触半导体体的方法

公开(公告)号：US3328272A

公开(公告)日：1967-06-27

申请号：US49820665

申请日：1965-10-18

Applicant: SIEMENS AG

Inventor： HERBERT SANDMANN , RICHARD DOTZER

IPC: C25D3/44 , C25D3/54 , C25D7/12 , C30B31/04 , H01L21/00 , H01L21/288

CPC classification number: H01L21/2885 , C25D3/44 , C25D3/54 , C25D7/12 , C30B31/04 , H01L21/00

Patent Agency Ranking