公开(公告)号：US20180277688A1

公开(公告)日：2018-09-27

申请号：US15709977

申请日：2017-09-20

Applicant: SK hynix Inc.

Inventor： Sun-Ha HWANG ,  Pyong-Su KWAG ,  Sang-Uk PARK ,  Kwang-Deok KIM ,  Ho-Ryeong LEE ,  Ju-Tae RYU

IPC: H01L29/94 ,  H01L49/02 ,  H01L27/146

CPC classification number: H01L29/94 ,  H01L23/5223 ,  H01L27/0805 ,  H01L27/14614 ,  H01L28/60 ,  H01L28/86

Abstract: A MOS capacitor may include: an isolation layer formed in a substrate and defining an active region; a first electrode formed in the active region, and including an impurity region spaced from the isolation layer; and a second electrode formed over the substrate overlapping the impurity region, and including a gate having a plurality of gate patterns adjacent to each other with a gap therebetween.

公开(公告)号：US20190115381A1

公开(公告)日：2019-04-18

申请号：US16217963

申请日：2018-12-12

Applicant: SK hynix Inc.

Inventor： Pyong-Su KWAG ,  Young-Jun KWON ,  Cha-Young LEE

IPC: H01L27/146 ,  H01L29/786 ,  H04N5/378 ,  H01L29/423

CPC classification number: H01L27/14614 ,  H01L27/1421 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/1464 ,  H01L29/4236 ,  H01L29/78675 ,  H04N5/378

Abstract: An image sensor may include a photoelectric conversion element, a transfer transistor formed over the photoelectric conversion element, and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are configured symmetrical to each other with respect to the gap.

公开(公告)号：US20190363119A1

公开(公告)日：2019-11-28

申请号：US16219049

申请日：2018-12-13

Applicant: SK hynix Inc.

Inventor： Pyong-Su KWAG

IPC: H01L27/146 ,  H04N5/3745

Abstract: An image sensor may include unit pixel blocks with each having pixels for sensing incident light. Each unit pixel block may include a first sub pixel block including a first floating diffusion, a second sub pixel block including a second floating diffusion, and a common transistor block including a first drive transistor adjacent to the first floating diffusion and a second drive transistor adjacent to the second floating diffusion. The first and second floating diffusions may be electrically coupled in common to the first and second drive transistors.

公开(公告)号：US20170278884A1

公开(公告)日：2017-09-28

申请号：US15214012

申请日：2016-07-19

Applicant: SK hynix Inc.

Inventor： Yun-Hui YANG ,  Sung-Kun PARK ,  Pyong-Su KWAG ,  Ho-Ryeong LEE ,  Young-Jun KWON

IPC: H01L27/146

CPC classification number: H01L27/14616 ,  H01L21/28114 ,  H01L21/823412 ,  H01L21/823456 ,  H01L21/823487 ,  H01L27/14605 ,  H01L27/14614 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/14692 ,  H01L29/1037 ,  H01L29/42376 ,  H01L29/42384 ,  H01L29/66666 ,  H01L29/6675 ,  H01L29/66787 ,  H01L29/78642 ,  H01L29/78672 ,  H01L29/78696

Abstract: This technology relates to an image sensor. The image sensor may include a substrate including a photoelectric conversion element; a pillar formed over the photoelectric conversion element and having a concave-convex sidewall; a channel film formed along a surface of the pillar and for having at least one end coupled to the photoelectric conversion element; and a transfer gate formed over the channel film.

公开(公告)号：US20170179174A1

公开(公告)日：2017-06-22

申请号：US15446775

申请日：2017-03-01

Applicant: SK hynix Inc.

Inventor： Yun-Hui YANG ,  Pyong-Su KWAG ,  Young-Jun KWON ,  Min-Ki NA ,  Sung-Kun PARK ,  Donghyun WOO ,  Cha-Young LEE ,  Ho-Ryeong LEE

IPC: H01L27/146 ,  H01L29/78 ,  H01L29/04 ,  H01L29/51 ,  H01L29/16

CPC classification number: H01L27/14614 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L29/04 ,  H01L29/16 ,  H01L29/511 ,  H01L29/7827

Abstract: An image sensor includes a photoelectric conversion element, including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.

公开(公告)号：US20190199951A1

公开(公告)日：2019-06-27

申请号：US16293395

申请日：2019-03-05

Applicant: SK hynix Inc.

Inventor： Pyong-Su KWAG ,  Sung-Kun PARK ,  Dong-Hyun WOO

IPC: H04N5/369 ,  H04N5/3745 ,  H04N5/351

CPC classification number: H04N5/3698 ,  H04N5/351 ,  H04N5/3745

Abstract: An image sensing device includes a floating diffusion node, a reset circuit coupled between a supply terminal of a high voltage and the floating diffusion node, and suitable for resetting the floating diffusion node with the high voltage during a reference period based on a reset control signal, a photodiode coupled between a supply terminal of a low voltage and a coupling node, and suitable for generating a photocharge based on incident light during an exposure period, a transmission block coupled between the coupling node and the floating diffusion node, and suitable for transmitting the photocharge to the floating diffusion node during a transmission period based on a transmission control signal, and a selection circuit coupled between an input terminal of a boost control signal and an output terminal of a pixel signal, and suitable for generating the pixel signal with a boost voltage greater than the high voltage during the transmission period based on a selection control signal and a voltage applied to the floating diffusion node.

公开(公告)号：US20170338264A1

公开(公告)日：2017-11-23

申请号：US15251998

申请日：2016-08-30

Applicant: SK hynix Inc.

Inventor： Pyong-Su KWAG ,  Young-Jun KWON ,  Cha-Young LEE

IPC: H01L27/146 ,  H01L29/423 ,  H01L29/786 ,  H04N5/378

CPC classification number: H01L27/14614 ,  H01L27/1421 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/1464 ,  H01L29/4236 ,  H01L29/78675 ,  H04N5/378

Abstract: An image sensor may include a photoelectric conversion element, a transfer transistor formed over the photoelectric conversion element, and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are configured symmetrical to each other with respect to the gap.

公开(公告)号：US20170330907A1

公开(公告)日：2017-11-16

申请号：US15238529

申请日：2016-08-16

Applicant: SK hynix Inc.

Inventor： Pyong-Su KWAG ,  Ho-Ryeong LEE

IPC: H01L27/146

CPC classification number: H01L27/14607 ,  H01L27/14636

Abstract: An image sensor may include: a substrate including a photoelectric conversion element; a first interlayer dielectric layer formed over the photoelectric conversion element; a channel layer including a first region and a second region, the first region being formed in an opening passing through the first interlayer dielectric layer, with a portion of the first region contacting the photoelectric conversion element, and the second region being formed over the first interlayer dielectric layer; a transfer transistor formed over the first region of the channel layer, the transfer transistor including a transfer gate which gapfills the opening; and a reset transistor including a reset gate formed over the second region of the channel layer.

公开(公告)号：US20170208282A1

公开(公告)日：2017-07-20

申请号：US15152339

申请日：2016-05-11

Applicant: SK hynix Inc.

Inventor： Pyong-Su KWAG ,  Sung-Kun PARK ,  Yun-Hui YANG

IPC: H04N5/376

CPC classification number: H04N5/3765 ,  H04N5/3597

Abstract: An image sensing device includes: a floating diffusion node; an initialization block suitable for initializing the floating diffusion node with a first voltage, based on an initialization control signal; a boosting block suitable for boosting the floating diffusion node with a second voltage, based on a boost control signal; a photodiode suitable for generating a photocharge based on incident light; a transmission block suitable for transmitting the photocharge to the floating diffusion node based on a transmission control signal; and a selection block suitable for generating a pixel signal corresponding to a voltage loaded on the floating diffusion node based on a selection control signal.

公开(公告)号：US20210272993A1

公开(公告)日：2021-09-02

申请号：US17322131

申请日：2021-05-17

Applicant: SK hynix Inc.

Inventor： Pyong-Su KWAG

IPC: H01L27/146 ,  H04N5/376 ,  H04N5/3745

Abstract: An image sensor may include a pixel array including a plurality of pixel blocks operable to convert light into electrical signals. Each of the plurality of pixel blocks may include a first light receiving circuit including a plurality of unit pixels that share a first floating diffusion; a second light receiving circuit arranged adjacent to the first light receiving circuit in a second direction, and including a plurality of unit pixels that share a second floating diffusion; a first driving circuit positioned between the first light receiving circuit and the second light receiving circuit; a second driving circuit positioned adjacent to the other side facing away from one side of the first light receiving circuit or the second light receiving circuit, which is adjacent to the first driving circuit; and a third driving circuit positioned adjacent to the first driving circuit or the second driving circuit.