公开(公告)号：US20180277688A1

公开(公告)日：2018-09-27

申请号：US15709977

申请日：2017-09-20

Applicant: SK hynix Inc.

Inventor： Sun-Ha HWANG ,  Pyong-Su KWAG ,  Sang-Uk PARK ,  Kwang-Deok KIM ,  Ho-Ryeong LEE ,  Ju-Tae RYU

IPC: H01L29/94 ,  H01L49/02 ,  H01L27/146

CPC classification number: H01L29/94 ,  H01L23/5223 ,  H01L27/0805 ,  H01L27/14614 ,  H01L28/60 ,  H01L28/86

Abstract: A MOS capacitor may include: an isolation layer formed in a substrate and defining an active region; a first electrode formed in the active region, and including an impurity region spaced from the isolation layer; and a second electrode formed over the substrate overlapping the impurity region, and including a gate having a plurality of gate patterns adjacent to each other with a gap therebetween.

公开(公告)号：US20170330907A1

公开(公告)日：2017-11-16

申请号：US15238529

申请日：2016-08-16

Applicant: SK hynix Inc.

Inventor： Pyong-Su KWAG ,  Ho-Ryeong LEE

IPC: H01L27/146

CPC classification number: H01L27/14607 ,  H01L27/14636

Abstract: An image sensor may include: a substrate including a photoelectric conversion element; a first interlayer dielectric layer formed over the photoelectric conversion element; a channel layer including a first region and a second region, the first region being formed in an opening passing through the first interlayer dielectric layer, with a portion of the first region contacting the photoelectric conversion element, and the second region being formed over the first interlayer dielectric layer; a transfer transistor formed over the first region of the channel layer, the transfer transistor including a transfer gate which gapfills the opening; and a reset transistor including a reset gate formed over the second region of the channel layer.

公开(公告)号：US20170294468A1

公开(公告)日：2017-10-12

申请号：US15238468

申请日：2016-08-16

Applicant: SK hynix Inc.

Inventor： Sung-Kun PARK ,  Yun-Hui YANG ,  Pyong-Su KWAG ,  Dong-Hyun WOO ,  Young-Jun KWON ,  Min-Ki NA ,  Cha-Young LEE ,  Ho-Ryeong LEE

IPC: H01L27/146

CPC classification number: H01L27/14616 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14689

Abstract: An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.

公开(公告)号：US20170278883A1

公开(公告)日：2017-09-28

申请号：US15192816

申请日：2016-06-24

Applicant: SK hynix Inc.

Inventor： Pyong-Su KWAG ,  Min-Ki NA ,  Dong-Hyun WOO ,  Ho-Ryeong LEE

IPC: H01L27/146 ,  H01L29/423 ,  H01L27/06

CPC classification number: H01L27/14614 ,  H01L27/0629 ,  H01L27/14643 ,  H01L27/14689 ,  H01L29/42376

Abstract: An image sensor includes: a light receiving section suitable for generating photocharges in response to incident light; and a driving section including a source follower transistor suitable for generating an output voltage corresponding to a reference voltage in response to the photocharges. The source follower transistor includes: a stack structure formed by sequentially stacking a first conductive layer, an insulating layer and a second conductive layer; an open portion to formed through the second conductive layer and the insulating layer so as to expose the first conductive layer; a channel layer formed along the surface of the open portion so as to be connected to the first conductive layer and the second conductive layer; and a gate is connected to the light receiving section and which is formed over the channel layer so as to overlap the second conductive layer.

公开(公告)号：US20170278884A1

公开(公告)日：2017-09-28

申请号：US15214012

申请日：2016-07-19

Applicant: SK hynix Inc.

Inventor： Yun-Hui YANG ,  Sung-Kun PARK ,  Pyong-Su KWAG ,  Ho-Ryeong LEE ,  Young-Jun KWON

IPC: H01L27/146

CPC classification number: H01L27/14616 ,  H01L21/28114 ,  H01L21/823412 ,  H01L21/823456 ,  H01L21/823487 ,  H01L27/14605 ,  H01L27/14614 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/14692 ,  H01L29/1037 ,  H01L29/42376 ,  H01L29/42384 ,  H01L29/66666 ,  H01L29/6675 ,  H01L29/66787 ,  H01L29/78642 ,  H01L29/78672 ,  H01L29/78696

Abstract: This technology relates to an image sensor. The image sensor may include a substrate including a photoelectric conversion element; a pillar formed over the photoelectric conversion element and having a concave-convex sidewall; a channel film formed along a surface of the pillar and for having at least one end coupled to the photoelectric conversion element; and a transfer gate formed over the channel film.

公开(公告)号：US20170179174A1

公开(公告)日：2017-06-22

申请号：US15446775

申请日：2017-03-01

Applicant: SK hynix Inc.

Inventor： Yun-Hui YANG ,  Pyong-Su KWAG ,  Young-Jun KWON ,  Min-Ki NA ,  Sung-Kun PARK ,  Donghyun WOO ,  Cha-Young LEE ,  Ho-Ryeong LEE

IPC: H01L27/146 ,  H01L29/78 ,  H01L29/04 ,  H01L29/51 ,  H01L29/16

CPC classification number: H01L27/14614 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L29/04 ,  H01L29/16 ,  H01L29/511 ,  H01L29/7827

Abstract: An image sensor includes a photoelectric conversion element, including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.