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公开(公告)号:US20160351605A1
公开(公告)日:2016-12-01
申请号:US14818740
申请日:2015-08-05
Applicant: SK hynix Inc.
Inventor: Yun-Hui YANG
IPC: H01L27/146 , G01J1/44
CPC classification number: H01L27/14607 , G01J1/0209 , G01J1/0488 , G01J1/06 , G01J1/44 , G01J3/0208 , G01J3/0259 , G01J3/0262 , H01L27/14621 , H01L27/14625 , H01L27/14627
Abstract: An image sensor includes a substrate including photoelectric conversion elements for a plurality of unit pixels, which are two-dimensionally arranged in a pixel array; a light transmission member on the substrate; a grid structure in the light transmission member and having multiple layers; and a light collection member on the light transmission member, wherein the grid structure is tilted for respective chief ray angles of the plurality of unit pixels according to locations of the plurality of unit pixels in the pixel array.
Abstract translation: 图像传感器包括:基板,包括用于多个单位像素的光电转换元件,二维排列成像素阵列; 在所述基板上的透光构件; 在透光构件中具有多个层的栅格结构; 以及在所述光透射部件上的光收集部件,其中,根据所述像素阵列中的所述多个单位像素的位置,所述栅格结构针对所述多个单位像素的各自的主光线角度倾斜。
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公开(公告)号:US20190094293A1
公开(公告)日:2019-03-28
申请号:US15957644
申请日:2018-04-19
Applicant: SK hynix Inc.
Inventor: Yun-Hui YANG , Youngwoong DO
IPC: G01R31/26 , H01L27/146
CPC classification number: G01R31/2644 , H01L27/14605 , H01L27/14607 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14645
Abstract: An image sensor includes a pixel array and a test region adjacent to the pixel array. Each of the pixel array and the test region include a plurality of pixels, and each of the pixels in the test region include: a substrate including a photoelectric conversion element; and a transparent layer formed over the substrate and having an inclined top surface.
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公开(公告)号:US20180035107A1
公开(公告)日:2018-02-01
申请号:US15454531
申请日:2017-03-09
Applicant: SK hynix Inc.
Inventor: Yun-Hui YANG , Donghyun WOO , Jong-Chae KIM
IPC: H04N17/00
CPC classification number: H04N17/002 , H01L27/14603 , H01L27/14616 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14641
Abstract: An image sensor includes a substrate including an active pixel and a test pattern, wherein the test pattern is located adjacent to the active pixel, wherein the active pixel comprises a first photodiode, a floating diffusion, a first channel provided between the first photodiode and the floating diffusion, and a first transfer gate electrode provided over the first channel, wherein the test pattern comprises a first test photodiode, a test floating diffusion, a second channel provided between the first test photodiode and the test floating diffusion, a first test transfer gate electrode provided over the second channel, and a first contact plug connected to the first test photodiode, and wherein the first test photodiode, the test floating diffusion, the second channel, and the first test transfer gate have substantially the same alignment errors as the first photodiode, the floating diffusion, the first channel, and the first transfer gate electrode, respectively.
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公开(公告)号:US20170294468A1
公开(公告)日:2017-10-12
申请号:US15238468
申请日:2016-08-16
Applicant: SK hynix Inc.
Inventor: Sung-Kun PARK , Yun-Hui YANG , Pyong-Su KWAG , Dong-Hyun WOO , Young-Jun KWON , Min-Ki NA , Cha-Young LEE , Ho-Ryeong LEE
IPC: H01L27/146
CPC classification number: H01L27/14616 , H01L27/14603 , H01L27/14614 , H01L27/1463 , H01L27/14638 , H01L27/14643 , H01L27/14689
Abstract: An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.
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公开(公告)号:US20170287959A1
公开(公告)日:2017-10-05
申请号:US15215770
申请日:2016-07-21
Applicant: SK hynix Inc.
Inventor: Pyong-Su KWAG , Yun-Hui YANG , Young-Jun KWON
IPC: H01L27/146 , H04N5/378
CPC classification number: H01L27/14616 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14638 , H01L27/14645 , H01L27/14689 , H04N5/378
Abstract: An image sensor may include: a photoelectric conversion element including a second conductive layer formed over a first conductive layer; an insulating layer and a third conductive layer which are sequentially formed over the second conductive layer; an opening exposing the second conductive layer through the third conductive layer and the insulating layer; a channel layer formed along the surface of the opening, and including first and second channel layers which are coupled to each other while having different conductivity types; and a transfer gate formed over the channel layer to fill the opening, and partially formed over the third conductive layer.
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公开(公告)号:US20190088700A1
公开(公告)日:2019-03-21
申请号:US15972703
申请日:2018-05-07
Applicant: SK hynix Inc.
Inventor: Yun-Hui YANG
IPC: H01L27/146
CPC classification number: H01L27/14623 , H01L27/14612 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L27/14689
Abstract: This technology relates to an image sensor. The image sensor includes a substrate including a photoelectric transformation element, the substrate includes a first surface and a second surface faced to the first surface; first and second shielding layers overlapped to photoelectric transformation element and formed over the first and second surfaces, respectively; and a third shielding layer surrounding the photoelectric transformation element and contacted to the first and second shielding layers by penetrating the substrate.
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公开(公告)号:US20170208282A1
公开(公告)日:2017-07-20
申请号:US15152339
申请日:2016-05-11
Applicant: SK hynix Inc.
Inventor: Pyong-Su KWAG , Sung-Kun PARK , Yun-Hui YANG
IPC: H04N5/376
CPC classification number: H04N5/3765 , H04N5/3597
Abstract: An image sensing device includes: a floating diffusion node; an initialization block suitable for initializing the floating diffusion node with a first voltage, based on an initialization control signal; a boosting block suitable for boosting the floating diffusion node with a second voltage, based on a boost control signal; a photodiode suitable for generating a photocharge based on incident light; a transmission block suitable for transmitting the photocharge to the floating diffusion node based on a transmission control signal; and a selection block suitable for generating a pixel signal corresponding to a voltage loaded on the floating diffusion node based on a selection control signal.
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公开(公告)号:US20180069037A1
公开(公告)日:2018-03-08
申请号:US15464631
申请日:2017-03-21
Applicant: SK hynix Inc.
Inventor: Yun-Hui YANG , Seon-Man HWANG
IPC: H01L27/146
CPC classification number: H01L27/1463 , H01L27/14612 , H01L27/14643
Abstract: A stacked image sensor includes: a lower device including a lower inter-layer dielectric layer over an upper surface of a lower substrate, and a lower capping layer over the lower inter-layer dielectric layer; an upper device stacked over the lower device, including photodiodes in an upper substrate, an upper inter-layer dielectric layer below a lower surface of the upper substrate, and an upper capping layer below the upper inter-layer dielectric layer; and an air gap formed between the lower inter-layer dielectric layer and the upper inter-layer dielectric layer.
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公开(公告)号:US20170365635A1
公开(公告)日:2017-12-21
申请号:US15437716
申请日:2017-02-21
Applicant: SK hynix Inc.
Inventor: Yun-Hui YANG
IPC: H01L27/146
CPC classification number: H01L27/14643 , H01L27/14601 , H01L27/14609 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14647
Abstract: An image sensor may include a main photodiode formed in a substrate, a first inter-layer dielectric layer formed over a lower surface of the substrate, and phase difference detectors formed over the first inter-layer dielectric layer. The phase difference detectors include a left phase difference detector that is vertically overlapping and aligned with a left side region of the main photodiode, and a right phase difference detector that is vertically overlapping and aligned with a right side region of the main photodiode.
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公开(公告)号:US20170365630A1
公开(公告)日:2017-12-21
申请号:US15437748
申请日:2017-02-21
Applicant: SK hynix Inc.
Inventor: Yun-Hui YANG
IPC: H01L27/146
CPC classification number: H01L27/1463 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14689
Abstract: An image sensor includes a plurality of photodiodes formed in a substrate; nano void regions formed in the substrate adjacent to sides of each photodiode of the plurality of photodiodes; and a plurality of nano voids formed in each nano void region of the nano void regions.
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