公开(公告)号：US20140210032A1

公开(公告)日：2014-07-31

申请号：US14228648

申请日：2014-03-28

Applicant: Sony Corporation

Inventor： Kensaku Maeda ,  Hiroyasu Matsugai ,  Yusuke Moriya

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/02327

Abstract: The present invention relates to a solid-state imaging device having good focusing properties, a method for manufacturing such a solid-state imaging device, and an electronic apparatus. The solid-state imaging device has a semiconductor substrate 11 and a photoelectric conversion part formed in the semiconductor substrate 11. In the solid-state imaging device, a laminate including an organic material layer and an inorganic material layer is formed on the semiconductor substrate with at least one stress relaxation layer 22 interposed between the organic and inorganic material layers. This technology is applicable to, for example, solid-state imaging devices having pixels and microlenses placed thereon.

Abstract translation: 本发明涉及具有良好聚焦性质的固态成像装置，这种固态成像装置的制造方法以及电子装置。 固态成像装置具有形成在半导体基板11中的半导体基板11和光电转换部。在固态成像装置中，在半导体基板上形成有机材料层和无机材料层的层叠体， 插入有机层和无机材料层之间的至少一个应力松弛层22。 该技术适用于例如具有放置在其上的像素和微透镜的固态成像装置。

公开(公告)号：US20140077324A1

公开(公告)日：2014-03-20

申请号：US14026624

申请日：2013-09-13

Applicant: SONY CORPORATION

Inventor： Hiroyasu Matsugai

IPC: H01L31/0232

CPC classification number: H01L31/02325 ,  H01L27/14607 ,  H01L27/14618 ,  H01L27/14627 ,  H01L27/14647 ,  H01L27/14685 ,  H01L27/307 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A solid-state image pickup device includes: a plurality of pixels each including an organic photoelectric conversion layer; a sealing layer that covers the pixels; and a first lens section provided for each of the pixels and provided on a side, of the sealing layer, on which the organic photoelectric conversion layer is located. The first lens section is formed integrally with the sealing layer.

Abstract translation: 固态图像拾取装置包括：多个像素，每个像素包括有机光电转换层; 覆盖像素的密封层; 以及设置在所述有机光电转换层所位于的所述密封层的一侧的每个所述像素的第一透镜部。 第一透镜部与密封层一体形成。

公开(公告)号：US09842879B2

公开(公告)日：2017-12-12

申请号：US15311362

申请日：2015-06-03

Applicant: SONY CORPORATION

Inventor： Hiroyasu Matsugai

IPC: H01L27/146

CPC classification number: H01L27/14687 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14645

Abstract: There is provided solid-state imaging devices and methods of forming the same, the solid-state imaging devices including: a semiconductor substrate; a glass substrate; an adhesion layer provided between the semiconductor substrate and the glass substrate; and a warpage correction film provided adjacent to one of the semiconductor substrate and the glass substrate.

公开(公告)号：US08867581B2

公开(公告)日：2014-10-21

申请号：US13736559

申请日：2013-01-08

Applicant: Sony Corporation

Inventor： Hiroyasu Matsugai ,  Kei Satou

IPC: H01S5/00 ,  H01S5/30 ,  H01L21/02

CPC classification number: H01S5/30 ,  H01L21/02518 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/2219 ,  H01S5/222 ,  H01S5/3063 ,  H01S5/32341 ,  H01S2301/176

Abstract: A semiconductor laser includes: a semiconductor layer including an active layer and a ridge portion, the ridge portion facing a current injection region of the active layer; and an embedded film covering a side surface of the ridge portion and a top surface of the semiconductor layer, wherein the embedded film includes a first layer configured of a silicon oxide film, a second layer made of a silicon compound having a refractive index lower than that of the active layer and having a silicon content higher than a stoichiometric ratio, and a third layer made of an inorganic insulating material in this order of closeness to the ridge portion and the semiconductor layer.

Abstract translation: 半导体激光器包括：包括有源层和脊部的半导体层，所述脊部面向有源层的电流注入区域; 以及覆盖所述脊部的侧表面和所述半导体层的顶表面的嵌入膜，其中所述嵌入膜包括由氧化硅膜构成的第一层，由折射率低于所述半导体层的折射率的硅化合物制成的第二层 有效层的硅含量高于化学计量比，第三层由无机绝缘材料构成，该层与该脊部和半导体层接近。

公开(公告)号：US20130188662A1

公开(公告)日：2013-07-25

申请号：US13736559

申请日：2013-01-08

Applicant: Sony Corporation

Inventor： Hiroyasu Matsugai ,  Kei Satou

IPC: H01S5/30 ,  H01L21/02

CPC classification number: H01S5/30 ,  H01L21/02518 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/2219 ,  H01S5/222 ,  H01S5/3063 ,  H01S5/32341 ,  H01S2301/176

Abstract: A semiconductor laser includes: a semiconductor layer including an active layer and a ridge portion, the ridge portion facing a current injection region of the active layer; and an embedded film covering a side surface of the ridge portion and a top surface of the semiconductor layer, wherein the embedded film includes a first layer configured of a silicon oxide film, a second layer made of a silicon compound having a refractive index lower than that of the active layer and having a silicon content higher than a stoichiometric ratio, and a third layer made of an inorganic insulating material in this order of closeness to the ridge portion and the semiconductor layer.

Abstract translation: 半导体激光器包括：包括有源层和脊部的半导体层，所述脊部面向有源层的电流注入区域; 以及覆盖所述脊部的侧表面和所述半导体层的顶表面的嵌入膜，其中所述嵌入膜包括由氧化硅膜构成的第一层，由折射率低于所述半导体层的折射率的硅化合物制成的第二层 有效层的硅含量高于化学计量比，第三层由无机绝缘材料构成，该层与该脊部和半导体层接近。

公开(公告)号：US09941321B2

公开(公告)日：2018-04-10

申请号：US15273495

申请日：2016-09-22

Applicant: Sony Corporation

Inventor： Hiroyasu Matsugai ,  Kiyotaka Tabuchi

IPC: H01L27/146 ,  H01L21/66 ,  H01L21/768 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L27/06

CPC classification number: H01L27/14634 ,  H01L21/76898 ,  H01L22/12 ,  H01L22/20 ,  H01L23/562 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0688 ,  H01L27/14636 ,  H01L27/1469 ,  H01L2224/08145 ,  H01L2224/16 ,  H01L2224/24147 ,  H01L2224/80896 ,  H01L2224/8203 ,  H01L2224/92 ,  H01L2225/06541 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/80001 ,  H01L2224/82

Abstract: A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, a first main surface side of the first semiconductor substrate and a first main surface side of the second semiconductor substrate being bonded to each other; and a warpage correction layer which is formed on at least one or more selected from the first main surface side of the first semiconductor substrate, the first main surface side of the second semiconductor substrate, a second main surface side of the first semiconductor substrate, and a second main surface side of the second semiconductor substrate.

公开(公告)号：US10818717B2

公开(公告)日：2020-10-27

申请号：US16564444

申请日：2019-09-09

Applicant: SONY CORPORATION

Inventor： Hiroyasu Matsugai ,  Hiroyuki Itou ,  Suguru Saito ,  Keiji Ohshima ,  Masanori Iwasaki ,  Toshihiko Hayashi ,  Shuzo Sato ,  Nobutoshi Fujii ,  Hiroshi Tazawa ,  Toshiaki Shiraiwa ,  Minoru Ishida

IPC: H01L27/146 ,  B29D11/00 ,  G02B13/00 ,  G02B1/11

Abstract: A deformation of a stacked lens is suppressed.A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner side of a through-hole formed in the substrate are bonded and stacked by direct bonding. The present technique can be applied to a camera module or the like in which a stacked lens structure in which at least three substrates with lenses including first to third substrates with lenses which are substrates with lenses in which a through-hole is formed in the substrate and a lens is formed on an inner side of the through-hole is integrated with a light receiving element, for example.

公开(公告)号：US20170012074A1

公开(公告)日：2017-01-12

申请号：US15273495

申请日：2016-09-22

Applicant: Sony Corporation

Inventor： Hiroyasu Matsugai ,  Kiyotaka Tabuchi

IPC: H01L27/146 ,  H01L21/66 ,  H01L23/00

CPC classification number: H01L27/14634 ,  H01L21/76898 ,  H01L22/12 ,  H01L22/20 ,  H01L23/562 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0688 ,  H01L27/14636 ,  H01L27/1469 ,  H01L2224/08145 ,  H01L2224/16 ,  H01L2224/24147 ,  H01L2224/80896 ,  H01L2224/8203 ,  H01L2224/92 ,  H01L2225/06541 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/80001 ,  H01L2224/82

Abstract: A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, a first main surface side of the first semiconductor substrate and a first main surface side of the second semiconductor substrate being bonded to each other; and a warpage correction layer which is formed on at least one or more selected from the first main surface side of the first semiconductor substrate, the first main surface side of the second semiconductor substrate, a second main surface side of the first semiconductor substrate, and a second main surface side of the second semiconductor substrate.

Abstract translation: 半导体器件包括第一半导体衬底，第二半导体衬底，第一半导体衬底的第一主表面侧和第二半导体衬底的第一主表面侧彼此结合; 以及翘曲修正层，其形成在从所述第一半导体基板的所述第一主面侧，所述第二半导体基板的所述第一主面侧，所述第一半导体基板的第二主面侧以及 第二半导体衬底的第二主表面侧。

公开(公告)号：US11342371B2

公开(公告)日：2022-05-24

申请号：US16945247

申请日：2020-07-31

Applicant: SONY CORPORATION

Inventor： Hiroyasu Matsugai ,  Hiroyuki Itou ,  Suguru Saito ,  Keiji Ohshima ,  Masanori Iwasaki ,  Toshihiko Hayashi ,  Shuzo Sato ,  Nobutoshi Fujii ,  Hiroshi Tazawa ,  Toshiaki Shiraiwa ,  Minoru Ishida

IPC: H01L27/146 ,  B29D11/00 ,  G02B13/00 ,  G02B1/11

Abstract: A deformation of a stacked lens is suppressed.
A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner side of a through-hole formed in the substrate are bonded and stacked by direct bonding. The present technique can be applied to a camera module or the like in which a stacked lens structure in which at least three substrates with lenses including first to third substrates with lenses which are substrates with lenses in which a through-hole is formed in the substrate and a lens is formed on an inner side of the through-hole is integrated with a light receiving element, for example.

公开(公告)号：US10854667B2

公开(公告)日：2020-12-01

申请号：US16430218

申请日：2019-06-03

Applicant: SONY CORPORATION

Inventor： Hiroyasu Matsugai

IPC: H01L27/146

Abstract: There is provided solid-state imaging devices and methods of forming the same, the solid-state imaging devices including: a semiconductor substrate; a glass substrate; an adhesion layer provided between the semiconductor substrate and the glass substrate; and a warpage correction film provided adjacent to one of the semiconductor substrate and the glass substrate.