公开(公告)号：US10602084B2

公开(公告)日：2020-03-24

申请号：US15741921

申请日：2016-07-01

Applicant: SONY CORPORATION

Inventor： Tomoo Mitsunaga ,  Hayato Wakabayashi ,  Kenichi Okumura ,  Yasunobu Hitomi ,  Daisuke Iso ,  Tomonori Masuno ,  Shinichiro Izawa ,  Kyoko Izuha ,  Kouichi Harada

IPC: H04N5/345 ,  H04N5/374 ,  H04N5/378 ,  H04N7/18 ,  H04N5/225 ,  H04N5/341

Abstract: The present disclosure relates to an imaging apparatus comprising an image sensor that includes an imaging surface in which many pixels are arranged vertically and horizontally, a pixel control unit that controls the image sensor, selects a pixel corresponding to a sampling function among pixels configuring a block by applying the sampling function for each block acquired by partitioning the imaging surface of the image sensor into a plurality of blocks, and outputs a sampling signal based on a pixel value of the selected pixel, and a reduced image generating unit that generates a reduced image on the basis of the sampling signal for each block output from the image sensor.

公开(公告)号：US20170214864A1

公开(公告)日：2017-07-27

申请号：US15329600

申请日：2015-05-18

Applicant: Sony Corporation

Inventor： Kyoko Izuha ,  Kouichi Harada ,  Tomoo Mitsunaga ,  Hayato Wakabayashi ,  Koji Kadono

IPC: H04N5/345 ,  H04N5/369 ,  H04N5/14 ,  H04N5/378

CPC classification number: H04N5/345 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14643 ,  H04N5/144 ,  H04N5/341 ,  H04N5/353 ,  H04N5/3698 ,  H04N5/3745 ,  H04N5/378 ,  H04N9/045

Abstract: An imaging device includes imaging elements 12 arranged in two-dimensional matrix in a first direction and a second direction, an analog-digital (AD) converter 13, and a pixel signal reading device 16. The pixel signal reading device 16 selects spatially at random the imaging element 12 that outputs a pixel signal to the AD converter 13, and randomly outputs the pixel signal of the imaging element 12 from the AD converter 13.

公开(公告)号：US20160231600A1

公开(公告)日：2016-08-11

申请号：US15022188

申请日：2014-08-28

Applicant: SONY CORPORATION

Inventor： Kouichi Harada ,  Kyoto Izuha ,  Koji Kadono

IPC: G02F1/015 ,  H01L27/146 ,  H04N9/04

CPC classification number: G02F1/015 ,  G02F2201/16 ,  H01L27/14625 ,  H01L27/14645 ,  H04N9/045 ,  H04N2209/045

Abstract: A light control device 10 includes a pair of electrodes 611 and 612 and a stacked structure body 613′ of a plurality of light control layers 613 sandwiched by the pair of electrodes 611 and 612; and each light control layer 613 has a stacked structure of a first insulating layer 614, a first nanocarbon film 615 doped with an n-type impurity or not doped with an impurity, a second insulating layer 617, and a second nanocarbon film 616 doped with a p-type impurity or not doped with an impurity.

Abstract translation: 光控制装置10包括由一对电极611和612夹持的多个光控制层613的一对电极611和612以及堆叠结构体613'; 并且每个光控制层613具有第一绝缘层614，掺杂有n型杂质或未掺杂杂质的第一纳米碳膜615，第二绝缘层617和掺杂有第二绝缘层的第二纳米碳膜616的堆叠结构 p型杂质或不掺杂杂质。

公开(公告)号：US09219090B2

公开(公告)日：2015-12-22

申请号：US14035131

申请日：2013-09-24

Applicant: Sony Corporation

Inventor： Kyoko Izuha ,  Kouichi Harada

IPC: H01L21/00 ,  H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/14621 ,  H01L27/14685

Abstract: A solid-state image capturing device including: a semiconductor substrate having a photosensitive surface including a matrix of pixels as respective photoelectric converters; and a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film being made of a photochromic material having a light transmittance variable depending on the intensity of applied light in a predetermined wavelength range; wherein the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the pixels are read from all the pixels.

Abstract translation: 一种固态图像捕获装置，包括：具有包括作为各自的光电转换器的像素矩阵的感光表面的半导体基板; 以及光致变色膜，其配置在向各光电转换体施加光的光路上，所述光致变色膜由光致变色材料构成，所述光致变色材料的光透射率随所施加的光的强度在预定波长范围内变化; 其中所述透光率具有比从所述像素读取由所述像素产生的像素信号的一帧短的半值周期。

公开(公告)号：US10381395B2

公开(公告)日：2019-08-13

申请号：US15105183

申请日：2014-11-12

Applicant: SONY CORPORATION

Inventor： Kyoko Izuha ,  Tomoo Mitsunaga ,  Kouichi Harada ,  Koji Kadono

IPC: H01L27/146 ,  H01L27/14 ,  H04N5/355 ,  H04N9/04 ,  G02F1/1343 ,  G02F1/1347 ,  H04N5/225 ,  H01L27/30 ,  H01L27/32

Abstract: A light control device according to the present disclosure includes: stacked M (provided that M≥1) light control layers 113M in each of which a first nanocarbon film 114, a first intermediate layer 117A, a dielectric material layer 116, and a second intermediate layer 117B are stacked; and a second nanocarbon film 115formed on the second intermediate layer 117B included in an M-th light control layer 113M. A voltage is applied to the first nanocarbon film 114 and the second nanocarbon film 115.

公开(公告)号：US09438834B2

公开(公告)日：2016-09-06

申请号：US14465432

申请日：2014-08-21

Applicant: Sony Corporation

Inventor： Kyoko Izuha ,  Kouichi Harada

IPC: H04N5/369 ,  H01L27/146

CPC classification number: H04N5/3698 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14667

Abstract: A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film.

Abstract translation: 一种固态成像装置，包括：半导体衬底，其包括根据以矩阵形状排列的像素分割并形成有光电转换部的受光面; 在从所述像素中选择的像素的一部分中，在与所述光电转换部对应的光入射路径上形成在所述半导体基板上的电致变色膜，并且根据施加到所述电致变色膜的电压具有从第一透射率向第二透射率变化的透光率 ; 形成在电致变色膜下面的下电极; 以及形成在电致变色膜上方的上电极。

公开(公告)号：US20140240557A1

公开(公告)日：2014-08-28

申请号：US14272332

申请日：2014-05-07

Applicant: Sony Corporation

Inventor： Kyoko Izuha ,  Kouichi Harada

IPC: H01L31/0216 ,  H04N9/04 ,  H01L27/146

CPC classification number: H01L31/02162 ,  H01L27/14625 ,  H04N5/2254 ,  H04N5/35563 ,  H04N9/045 ,  H04N2209/045

Abstract: A solid-state imaging device includes: a semiconductor substrate having a light receiving surface sectioned for red, green, blue, and white pixels arranged in a matrix with photodiodes formed thereon; color filters formed on the semiconductor substrate in light incident paths to the photodiodes of the respective formation regions of the red, green, and blue pixels and respectively transmitting lights in red, green, and blue wavelength regions; and photochromic films formed on the semiconductor substrate in the light incident path to the photodiodes in the formation regions of at least some of the white pixels, and containing a photochromic material having light transmittance varying in response to incident light intensity in a predetermined wavelength region, wherein a half period of the light transmittance of the photochromic films is shorter than one frame as a period in which pixel signals obtained in the pixels are read out with respect to all pixels.

Abstract translation: 固态成像装置包括：半导体衬底，其具有以形成在其上的光电二极管以矩阵排列的红色，绿色，蓝色和白色像素的受光面; 形成在半导体衬底上的彩色滤光器，分别以红色，绿色和蓝色像素的各个形成区域的光电二极管的光入射路径分别形成在红色，绿色和蓝色波长区域中的光; 以及在至少一些白色像素的形成区域中的光入射路径中的光入射路径中形成的光致变色膜，并且含有具有根据预定波长区域中的入射光强度而变化的光透射率的光致变色材料， 其中光致变色膜的透光率的一半周期短于一帧，作为相对于所有像素读出像素中获得的像素信号的周期。

公开(公告)号：US10324317B2

公开(公告)日：2019-06-18

申请号：US15022188

申请日：2014-08-28

Applicant: SONY CORPORATION

Inventor： Kouichi Harada ,  Kyoko Izuha ,  Koji Kadono

IPC: H04N9/04 ,  G02F1/015 ,  H01L27/146

Abstract: A light control device 10 includes a pair of electrodes 611 and 612 and a stacked structure body 613′ of a plurality of light control layers 613 sandwiched by the pair of electrodes 611 and 612; and each light control layer 613 has a stacked structure of a first insulating layer 614, a first nanocarbon film 615 doped with an n-type impurity or not doped with an impurity, a second insulating layer 617, and a second nanocarbon film 616 doped with a p-type impurity or not doped with an impurity.

公开(公告)号：US09761628B2

公开(公告)日：2017-09-12

申请号：US15036104

申请日：2014-10-16

Applicant: SONY CORPORATION

Inventor： Kouichi Harada ,  Kyoko Izuha ,  Koji Kadono

IPC: H01L21/00 ,  H01L27/146 ,  H01L31/10

CPC classification number: H01L27/14647 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14692 ,  H01L27/14694 ,  H01L27/14696 ,  H01L27/14698 ,  H01L31/10

Abstract: Provided is an imaging element including: a light receiving element 20; and a stacked structure body 130 that is placed on a light incident side of the light receiving element 20 and in which a semiconductor layer 131 and a nanocarbon film 132 to which a prescribed electric potential is applied are stacked from the light receiving element side. The semiconductor layer 131 is made of a wide gap semiconductor with an electron affinity of 3.5 eV or more, or is made of a semiconductor with a band gap of 2.0 eV or more and an electron affinity of 3.5 eV or more.

公开(公告)号：US20140362265A1

公开(公告)日：2014-12-11

申请号：US14465432

申请日：2014-08-21

Applicant: Sony Corporation

Inventor： Kyoko Izuha ,  Kouichi Harada

IPC: H04N5/369 ,  H01L27/146

CPC classification number: H04N5/3698 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14667

Abstract: A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film.

Abstract translation: 一种固态成像装置，包括：半导体衬底，其包括根据以矩阵形状排列的像素分割并形成有光电转换部的受光面; 在从所述像素中选择的像素的一部分中，在与所述光电转换部对应的光入射路径上形成在所述半导体基板上的电致变色膜，并且根据施加到所述电致变色膜的电压具有从第一透射率向第二透射率变化的透光率 ; 形成在电致变色膜下面的下电极; 以及形成在电致变色膜上方的上电极。