公开(公告)号：US10400352B2

公开(公告)日：2019-09-03

申请号：US15426770

申请日：2017-02-07

Applicant: Soraa, Inc.

Inventor： Mark P. D'Evelyn ,  James S. Speck ,  Derrick S. Kamber ,  Douglas W. Pocius

IPC: C30B7/10 ,  H01L21/02 ,  H01L29/20 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B33/06 ,  C30B19/06 ,  C30B19/12

Abstract: Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

公开(公告)号：US20170145585A1

公开(公告)日：2017-05-25

申请号：US15426770

申请日：2017-02-07

Applicant: Soraa, Inc.

Inventor： Mark P. D'Evelyn ,  James S. Speck ,  Derrick S. Kamber ,  Douglas W. Pocius

IPC: C30B7/10 ,  H01L21/02 ,  C30B33/06 ,  C30B19/06 ,  C30B29/40 ,  H01L29/20 ,  C30B19/12

CPC classification number: C30B7/105 ,  C30B19/068 ,  C30B19/12 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B33/06 ,  H01L21/0254 ,  H01L21/02609 ,  H01L29/2003

Abstract: Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

公开(公告)号：US20200087813A1

公开(公告)日：2020-03-19

申请号：US16550947

申请日：2019-08-26

Applicant: Soraa, Inc.

Inventor： Mark P. D'Evelyn ,  James S. Speck ,  Derrick S. Kamber ,  Douglas W. Pocius

IPC: C30B7/10 ,  H01L21/02 ,  C30B29/40 ,  C30B19/12 ,  C30B19/06 ,  C30B33/06 ,  C30B25/18 ,  C30B25/02 ,  H01L29/20

Abstract: Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

公开(公告)号：US09564320B2

公开(公告)日：2017-02-07

申请号：US13731453

申请日：2012-12-31

Applicant: SORAA, INC.

Inventor： Mark P. D'Evelyn ,  James S. Speck ,  Derrick S. Kamber ,  Douglas W. Pocius

IPC: H01L21/02 ,  H01L29/20 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B33/06

CPC classification number: C30B7/105 ,  C30B19/068 ,  C30B19/12 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B33/06 ,  H01L21/0254 ,  H01L21/02609 ,  H01L29/2003

Abstract: Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

Abstract translation: 公开了在超临界流体中处理材料的技术，包括在设置在高压装置外壳内的胶囊中的加工。 所公开的技术可用于生长GaN，AlN，InN及其合金（包括InGaN，AlGaN和AlInGaN）的晶体，用于制造块状或图案化衬底，其又可用于制造光电器件，激光器，发光 二极管，太阳能电池，光电化学水分解和氢产生装置，光电检测器，集成电路和晶体管。