公开(公告)号：US20160289815A1

公开(公告)日：2016-10-06

申请号：US15084574

申请日：2016-03-30

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： STEPHEN R. BURGESS ,  RHONDA HYNDMAN ,  AMIT RASTOGI ,  EDUARDO PAULO LIMA ,  CLIVE L. WIDDICKS ,  PAUL RICH ,  SCOTT HAYMORE ,  DANIEL COOK

IPC: C23C14/06 ,  C23C14/35 ,  H01J37/34 ,  C23C14/34

CPC classification number: C23C14/0641 ,  C23C14/0617 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/351 ,  H01J37/32669 ,  H01J37/3405 ,  H01J37/3429 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3461 ,  H01J37/3467 ,  H01J37/3476

Abstract: A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.

Abstract translation: 一种方法是通过用产生一个或多个初级磁场的脉冲DC磁控管装置的脉冲DC磁控溅射将电介质材料沉积在腔室中的衬底上。 在该方法中，溅射材料从靶溅射，其中靶和衬底间隔2.5至10cm的间隔，并且在室内产生二次磁场，这引起由脉冲DC产生的等离子体 磁控管装置朝向腔室的一个或多个壁膨胀。