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    NDIR DETECTOR DEVICE FOR DETECTING GASES HAVING AN INFRARED ABSORPTION SPECTRUM
    1.
    发明申请
    NDIR DETECTOR DEVICE FOR DETECTING GASES HAVING AN INFRARED ABSORPTION SPECTRUM 有权

    公开(公告)号：US20210215600A1

    公开(公告)日：2021-07-15

    申请号：US17217662

    申请日：2021-03-30

    Applicant: STMICROELECTRONICS S.r.l.

    Inventor： Maria Eloisa CASTAGNA ,  Salvatore CASCINO ,  Viviana CERANTONIO ,  Antonello SANTANGELO

    IPC: G01N21/3504

    Abstract: The device is formed in a casing including a support, a spacer body, and a mirror element fixed together. A light-emitting element and a light-receiving element are arranged on a bearing surface of the support and face a reflecting surface of the mirror element. The light-emitting element is configured to generate infrared radiation, and the light-receiving element is configured to receive light radiation reflected by the reflecting surface. The spacer body has an emission opening housing the light-emitting element and a reception opening housing the light-receiving element; the reception opening comprises a radiation-limitation portion configured to enable entry of reflected light radiation having an angle, with respect to a normal to the bearing surface, of less than a preset value.

    ELECTRONIC DEVICE WITH REDUCED SWITCHING OSCILLATIONS
    2.
    发明公开
    ELECTRONIC DEVICE WITH REDUCED SWITCHING OSCILLATIONS 审中-公开

    公开(公告)号：US20230317843A1

    公开(公告)日：2023-10-05

    申请号：US18188359

    申请日：2023-03-22

    Applicant: STMICROELECTRONICS S.r.l.

    Inventor： Salvatore CASCINO ,  Alfio GUARNERA ,  Mario Giuseppe SAGGIO

    IPC: H01L29/78 ,  H01L29/94 ,  H01L29/06

    CPC classification number: H01L29/7811 ,  H01L29/94 ,  H01L29/0615

    Abstract: The present disclosure is directed to an electronic device including a semiconductor body having a first electrical conductivity and provided with a front side; an active area of the semiconductor body, accommodating the source and gate regions of the electronic device and configured to accommodate, in use, a conductive channel of the electronic device; and an edge region of the electronic device, surrounding the active area. The edge region accommodates at least in part: i) an edge termination region, having a second electrical conductivity opposite to the first electrical conductivity, extending into the semiconductor body at the front side; and ii) a gate connection terminal of conductive material, electrically coupled to the gate region, extending on the front side partially superimposed on the edge termination region and capacitively coupled with a portion of the semiconductor body adjacent and external to the edge termination region.

    MINIATURIZED OPTICAL PARTICLE DETECTOR
    3.
    发明申请
    MINIATURIZED OPTICAL PARTICLE DETECTOR 有权

    公开(公告)号：US20210333195A1

    公开(公告)日：2021-10-28

    申请号：US17367160

    申请日：2021-07-02

    Applicant: STMICROELECTRONICS S.r.l.

    Inventor： Antonello SANTANGELO ,  Salvatore CASCINO ,  Viviana CERANTONIO

    IPC: G01N15/14

    Abstract: A particle detector formed by a body defining a chamber and housing a light source and a photodetector. A reflecting surface is formed by a first reflecting region and a second reflecting region that have a respective curved shape. The curved shapes are chosen from among portions of ellipsoidal, paraboloidal, and spherical surfaces. The first reflecting region faces the light source and the second reflecting region faces the photodetector. The first reflecting region has an own first focus, and the second reflecting region has an own first focus. The first focus of the first reflecting region is arranged in an active volume of the body, designed for detecting particles, and the photodetector is arranged on the first focus of the second reflecting region.

    SEMICONDUCTOR POWER DEVICE WITH SHORT CIRCUIT PROTECTION AND PROCESS FOR MANUFACTURING A SEMICONDUCTOR POWER DEVICE
    5.
    发明申请
    SEMICONDUCTOR POWER DEVICE WITH SHORT CIRCUIT PROTECTION AND PROCESS FOR MANUFACTURING A SEMICONDUCTOR POWER DEVICE 有权

    公开(公告)号：US20230134850A1

    公开(公告)日：2023-05-04

    申请号：US18045784

    申请日：2022-10-11

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Salvatore CASCINO ,  Alfio GUARNERA ,  Mario Giuseppe SAGGIO

    IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L21/04

    Abstract: A semiconductor power device has a maximum nominal voltage and includes: a first conduction terminal and a second conduction terminal; a semiconductor body, containing silicon carbide and having a first conductivity type; body wells having a second conductivity type, housed in the semiconductor body and separated from one another by a body distance; source regions housed in the body wells; and floating pockets having the second conductivity type, formed in the semiconductor body at a distance from the body wells between a first face and a second face of the semiconductor body. The floating pockets are shaped and arranged relative to the body wells so that a maximum intensity of electrical field around the floating pockets is greater than a maximum intensity of electrical field around the body wells at least for values of a conduction voltage between the first conduction terminal and the second conduction terminal greater than a threshold voltage, the threshold voltage being less than the maximum nominal voltage.

    SENSOR OF VOLATILE SUBSTANCES WITH INTEGRATED HEATER AND PROCESS FOR MANUFACTURING A SENSOR OF VOLATILE SUBSTANCES
    8.
    发明申请
    SENSOR OF VOLATILE SUBSTANCES WITH INTEGRATED HEATER AND PROCESS FOR MANUFACTURING A SENSOR OF VOLATILE SUBSTANCES 有权
    具有集成加热器的挥发性物质的传感器和制造挥发性物质传感器的方法

    公开(公告)号：US20150219582A1

    公开(公告)日：2015-08-06

    申请号：US14611062

    申请日：2015-01-30

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Antonello SANTANGELO ,  Salvatore CASCINO ,  Roberto MODICA ,  Viviana CERANTONIO ,  Maurizio MOSCHETTI

    IPC: G01N27/22 ,  C23C14/34

    CPC classification number: G01N27/225 ,  G01N27/22 ,  G01N27/223 ,  G01N27/227

    Abstract: A sensor of volatile substances including: a sensitive layer, of a sensitive material that is permeable to a volatile substance and has an electrical permittivity depending upon a concentration of the volatile substance absorbed; a first electrode structure and a second electrode structure capacitively coupled together and arranged so that a capacitance between the first electrode structure and the second electrode structure is affected by the electrical permittivity of the sensitive material; and a supply device, configured to supply a heating current through one between the first electrode structure and the second electrode structure in a first operating condition, so as to heat the sensitive layer.

    Abstract translation: 一种挥发性物质的传感器，包括：敏感层，敏感材料，其可渗透挥发性物质，并且具有取决于所吸收挥发性物质浓度的介电常数; 第一电极结构和第二电极结构，电容耦合在一起并且布置成使得第一电极结构和第二电极结构之间的电容受到敏感材料的电介电常数的影响; 以及供给装置，被配置为在第一操作条件下，通过第一电极结构和第二电极结构之间的加热电流供应加热电流，以加热敏感层。

    ELECTRONIC DEVICE WITH REDUCED SWITCHING OSCILLATIONS
    9.
    发明公开
    ELECTRONIC DEVICE WITH REDUCED SWITCHING OSCILLATIONS 审中-公开

    公开(公告)号：US20240006527A1

    公开(公告)日：2024-01-04

    申请号：US18468499

    申请日：2023-09-15

    Applicant: STMICROELECTRONICS S.r.l.

    Inventor： Salvatore CASCINO ,  Alfio GUARNERA ,  Mario Giuseppe SAGGIO

    IPC: H01L29/78 ,  H01L29/40 ,  H01L29/06

    CPC classification number: H01L29/7811 ,  H01L29/402 ,  H01L29/0619 ,  H01L29/1608

    Abstract: The present disclosure is directed to an electronic device including a semiconductor body having a first electrical conductivity and provided with a front side; an active area of the semiconductor body, accommodating the source and gate regions of the electronic device and configured to accommodate, in use, a conductive channel of the electronic device; and an edge region of the electronic device, surrounding the active area. The edge region accommodates at least in part: i) an edge termination region, having a second electrical conductivity opposite to the first electrical conductivity, extending into the semiconductor body at the front side; and ii) a gate connection terminal of conductive material, electrically coupled to the gate region, extending on the front side partially superimposed on the edge termination region and capacitively coupled with a portion of the semiconductor body adjacent and external to the edge termination region.

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