公开(公告)号：US09911810B2

公开(公告)日：2018-03-06

申请号：US15421100

申请日：2017-01-31

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Simona Lorenti ,  Cateno Marco Camalleri ,  Mario Giuseppe Saggio ,  Ferruccio Frisina

IPC: H01L29/78 ,  H01L29/10 ,  H01L21/324 ,  H01L21/02 ,  H01L21/3065 ,  H01L27/088 ,  H01L29/06 ,  H01L29/66 ,  H01L29/739 ,  H01L29/861 ,  H01L29/872 ,  H01L29/04

CPC classification number: H01L21/3247 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3065 ,  H01L21/324 ,  H01L27/088 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/73 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/8611 ,  H01L29/872

Abstract: Process for manufacturing a semiconductor power device, wherein a trench is formed in a semiconductor body having a first conductivity type; the trench is annealed for shaping purpose; and the trench is filled with semiconductor material via epitaxial growth so as to obtain a first column having a second conductivity type. The epitaxial growth is performed by supplying a gas containing silicon and a gas containing dopant ions of the second conductivity type in presence of a halogenide gas and occurs with uniform distribution of the dopant ions. The flow of the gas containing dopant ions is varied according to a linear ramp during the epitaxial growth; in particular, in the case of selective growth of the semiconductor material in the presence of a hard mask, the flow decreases; in the case of non-selective growth, in the absence of hard mask, the flow increases.

公开(公告)号：US09607859B2

公开(公告)日：2017-03-28

申请号：US14788685

申请日：2015-06-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Simona Lorenti ,  Cateno Marco Camalleri ,  Mario Giuseppe Saggio ,  Ferruccio Frisina

IPC: H01L29/76 ,  H01L29/94 ,  H01L21/324 ,  H01L27/088 ,  H01L21/02 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78 ,  H01L21/3065 ,  H01L29/73 ,  H01L29/861 ,  H01L29/872

CPC classification number: H01L21/3247 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3065 ,  H01L21/324 ,  H01L27/088 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/73 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/8611 ,  H01L29/872

Abstract: Process for manufacturing a semiconductor power device, wherein a trench is formed in a semiconductor body having a first conductivity type; the trench is annealed for shaping purpose; and the trench is filled with semiconductor material via epitaxial growth so as to obtain a first column having a second conductivity type. The epitaxial growth is performed by supplying a gas containing silicon and a gas containing dopant ions of the second conductivity type in presence of a halogenide gas and occurs with uniform distribution of the dopant ions. The flow of the gas containing dopant ions is varied according to a linear ramp during the epitaxial growth; in particular, in the case of selective growth of the semiconductor material in the presence of a hard mask, the flow decreases; in the case of non-selective growth, in the absence of hard mask, the flow increases.

公开(公告)号：US20170141191A1

公开(公告)日：2017-05-18

申请号：US15421100

申请日：2017-01-31

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Simona Lorenti ,  Cateno Marco Camalleri ,  Mario Giuseppe Saggio ,  Ferruccio Frisina

IPC: H01L29/10 ,  H01L21/02 ,  H01L21/3065 ,  H01L27/088 ,  H01L29/04 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  H01L29/872 ,  H01L21/324 ,  H01L29/06

CPC classification number: H01L21/3247 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3065 ,  H01L21/324 ,  H01L27/088 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/73 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/8611 ,  H01L29/872

Abstract: Process for manufacturing a semiconductor power device, wherein a trench is formed in a semiconductor body having a first conductivity type; the trench is annealed for shaping purpose; and the trench is filled with semiconductor material via epitaxial growth so as to obtain a first column having a second conductivity type. The epitaxial growth is performed by supplying a gas containing silicon and a gas containing dopant ions of the second conductivity type in presence of a halogenide gas and occurs with uniform distribution of the dopant ions. The flow of the gas containing dopant ions is varied according to a linear ramp during the epitaxial growth; in particular, in the case of selective growth of the semiconductor material in the presence of a hard mask, the flow decreases; in the case of non-selective growth, in the absence of hard mask, the flow increases.

公开(公告)号：US12249634B2

公开(公告)日：2025-03-11

申请号：US17669239

申请日：2022-02-10

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Mario Giuseppe Saggio ,  Alfio Guarnera ,  Cateno Marco Camalleri

IPC: H01L29/423 ,  H01L29/16 ,  H01L29/40 ,  H01L29/43 ,  H01L29/66 ,  H01L29/78

Abstract: A vertical-conduction MOSFET device formed in a body of silicon carbide having a first and a second face and a peripheral zone. A drain region, of a first conductivity type, extends in the body between the two faces. A body region, of a second conductivity type, extends in the body from the first face, and a source region, having the first conductivity type, extends to the inside of the body region from the first face of the body. An insulated gate region extends on the first face of the body and comprises a gate conductive region. An annular connection region, of conductive material, is formed within a surface edge structure extending on the first face of the body, in the peripheral zone. The gate conductive region and the annular connection region are formed by a silicon layer and by a metal silicide layer overlying the silicon layer.