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公开(公告)号:US11830724B2
公开(公告)日:2023-11-28
申请号:US17695400
申请日:2022-03-15
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Ruggero Anzalone , Nicolo' Frazzetto
IPC: H01L21/02 , H01L29/16 , H01L21/683 , C23C16/01 , C23C16/32
CPC classification number: H01L21/02008 , C23C16/01 , C23C16/325 , H01L21/0262 , H01L21/02381 , H01L21/02529 , H01L21/6835 , H01L29/1608 , H01L2221/68345 , H01L2221/68381
Abstract: Various embodiments provide an apparatus and method for fabricating a wafer, such as a SiC wafer. The apparatus includes a support having a plurality of arms for supporting a substrate. The arms allows for physical contact between the support and the substrate to be minimized. As a result, when the substrate is melted, surface tension between the arms and molten material is reduced, and the molten material will be less likely to cling to the support.
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公开(公告)号:US11946158B2
公开(公告)日:2024-04-02
申请号:US18321652
申请日:2023-05-22
Applicant: STMICROELECTRONICS S.r.l.
Inventor: Ruggero Anzalone , Nicolo' Frazzetto , Francesco La Via
IPC: C30B25/12 , C23C16/32 , C23C16/458 , C30B29/36 , H01L21/687 , C23C16/46 , C30B25/08 , H01L21/02 , H01L21/67
CPC classification number: C30B25/12 , C23C16/325 , C23C16/4583 , C30B29/36 , C23C16/4585 , C23C16/46 , C30B25/08 , H01L21/02529 , H01L21/0262 , H01L21/67011 , H01L21/6875 , H01L21/68785
Abstract: An apparatus for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber houses a collection container and a support or susceptor arranged over the container. The support is formed by a frame surrounding an opening accommodating a plurality of arms and a seat. The frame has a first a second surface, opposite to each other, with the first surface of the frame facing the support. The arms are formed by cantilever bars extending from the frame into the opening, having a maximum height smaller than the frame, and having at the top a resting edge. The resting edges of the arms define a resting surface that is at a lower level than the second surface of the frame. The seat has a bottom formed by the resting surface.
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