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公开(公告)号：US20160308011A1
公开(公告)日：2016-10-20
申请号：US15195784
申请日：2016-06-28
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Francesco LA ROSA , Stephan NIEL , Julien DELALLEAU , Arnaud REGNIER
IPC: H01L29/423 , H01L27/115 , H01L29/66 , H01L21/28 , H01L21/306 , H01L29/788 , G11C16/14
CPC classification number: H01L29/42328 , G11C16/0425 , G11C16/14 , H01L21/28273 , H01L21/30604 , H01L21/32051 , H01L21/32133 , H01L27/11521 , H01L27/11524 , H01L29/42336 , H01L29/66666 , H01L29/66825 , H01L29/7827 , H01L29/788 , H01L29/7881 , H01L29/7883 , H01L29/7885
Abstract: The present disclosure relates to a memory cell comprising a vertical selection gate extending in a trench made in a substrate, a floating gate extending above the substrate, and a horizontal control gate extending above the floating gate, wherein the floating gate also extends above a portion of the vertical selection gate over a non-zero overlap distance. Application mainly to the production of a split gate memory cell programmable by hot-electron injection.
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公开(公告)号：US20210057329A1
公开(公告)日：2021-02-25
申请号：US16546569
申请日：2019-08-21
Inventor： Abderrezak MARZAKI , Arnaud REGNIER , Stephan NIEL
IPC: H01L23/522 , H01L27/11524 , H01L49/02
Abstract: First and second wells are formed in a semiconductor substrate. First and second trenches in the first second wells, respectively, each extend vertically and include a central conductor insulated by a first insulating layer. A second insulating layer is formed on a top surface of the semiconductor substrate. The second insulating layer is selectively thinned over the second trench. A polysilicon layer is deposited on the second insulating layer and then lithographically patterned to form: a first polysilicon portion over the first well that is electrically connected to the central conductor of the first trench to form a first capacitor plate, a second capacitor plate formed by the first well; and a second polysilicon portion over the second well forming a floating gate electrode of a floating gate transistor of a memory cell having an access transistor whose control gate is formed by the central conductor of the second trench.
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3.发明申请公开(公告)号：US20150236031A1
公开(公告)日：2015-08-20
申请号：US14625356
申请日：2015-02-18
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Marc MANTELLI , Stephan NIEL , Arnaud REGNIER , Francesco LA ROSA , Julien DELALLEAU
IPC: H01L27/115 , H01L29/788 , G11C16/14 , H01L21/3213 , H01L21/306 , H01L21/308 , H01L21/266 , H01L29/423 , H01L21/28
CPC classification number: H01L29/7883 , G11C16/0425 , G11C16/14 , H01L21/266 , H01L21/28273 , H01L21/30604 , H01L21/308 , H01L21/32133 , H01L27/11521 , H01L27/11524 , H01L27/11553 , H01L27/11556 , H01L29/42328 , H01L29/42336 , H01L29/66666 , H01L29/66825 , H01L29/788
Abstract: The present disclosure relates to a memory cell that includes a vertical selection gate, a floating gate extending above the substrate, wherein the floating gate also extends above a portion of the vertical selection gate, over a non-zero overlap distance, the memory cell comprising a doped region implanted at the intersection of a vertical channel region extending opposite the selection gate and a horizontal channel region extending opposite the floating gate.
Abstract translation: 本公开涉及一种存储单元，其包括垂直选择栅极，在衬底上方延伸的浮置栅极，其中浮置栅极还在非零重叠距离上延伸到垂直选择栅极的一部分上方，存储器单元包括 注入在与选择栅极相对延伸的垂直沟道区域的相交处的掺杂区域和与浮动栅极相对延伸的水平沟道区域。
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4.发明申请公开(公告)号：US20190067291A1
公开(公告)日：2019-02-28
申请号：US16111480
申请日：2018-08-24
Inventor： Abderrezak MARZAKI , Arnaud REGNIER , Stephan NIEL , Quentin HUBERT , Thomas CABOUT
IPC: H01L27/108 , H01L29/66 , H01L49/02
CPC classification number: H01L27/10841 , H01L27/10864 , H01L27/10867 , H01L27/1087 , H01L27/10876 , H01L28/60 , H01L29/66181 , H01L29/945
Abstract: A capacitive element includes a trench extending vertically into a well from a first side. The trench is filled with a conductive central section clad with an insulating cladding. The capacitive element further includes a first conductive layer covering a first insulating layer that is located on the first side and a second conductive layer covering a second insulating layer that is located on the first conductive layer. The conductive central section and the first conductive layer are electrically connected to form a first electrode of the capacitive element. The second conductive layer and the well are electrically connected to form a second electrode of the capacitive element. The insulating cladding, the first insulating layer and the second insulating layer form a dielectric region of the capacitive element.
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公开(公告)号：US20170084749A1
公开(公告)日：2017-03-23
申请号：US15365768
申请日：2016-11-30
Applicant: STMICROELECTRONICS (ROUSSET) SAS
Inventor： Marc MANTELLI , Stephan NIEL , Arnaud REGNIER , Francesco LA ROSA , Julien DELALLEAU
IPC: H01L29/788 , G11C16/04 , H01L27/115 , H01L21/28 , H01L29/423 , H01L29/66
CPC classification number: H01L29/7883 , G11C16/0425 , G11C16/14 , H01L21/266 , H01L21/28273 , H01L21/30604 , H01L21/308 , H01L21/32133 , H01L27/11521 , H01L27/11524 , H01L27/11553 , H01L27/11556 , H01L29/42328 , H01L29/42336 , H01L29/66666 , H01L29/66825 , H01L29/788
Abstract: Various embodiments provide a memory cell that includes a vertical selection gate, a floating gate extending above the substrate, wherein the floating gate also extends above a portion of the vertical selection gate, over a non-zero overlap distance, the memory cell comprising a doped region implanted at the intersection of a vertical channel region extending opposite the selection gate and a horizontal channel region extending opposite the floating gate.
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Patent Agency Ranking
公开(公告)号：US20230012522A1
公开(公告)日：2023-01-19
申请号：US17935754
申请日：2022-09-27
Inventor： Franck JULIEN , Stephan NIEL , Leo GAVE
Abstract: A method for manufacturing an electronic device includes locally implanting ionic species into a first region of a silicon nitride layer and into a first region of an electrically insulating layer located under the first region of the silicon nitride layer. A second region of the silicon nitride layer and a region of the electrically insulating layer located under the second region of the silicon nitride layer are protected from the implantation. The electrically insulating layer is disposed between a semi-conducting substrate and the silicon nitride layer. At least one trench is formed extending into the semi-conducting substrate through the silicon nitride layer and the electrically insulating layer. The trench separates the first region from the second region of the electrically insulating layer. The electrically insulating layer is selectively etched, and the etch rate of the electrically insulating layer in the first region is greater than the etch rate in the second region.
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公开(公告)号：US20210225757A1
公开(公告)日：2021-07-22
申请号：US17226324
申请日：2021-04-09
Inventor： Abderrezak MARZAKI , Arnaud REGNIER , Stephan NIEL
IPC: H01L23/522 , H01L49/02 , H01L27/11524
Abstract: First and second wells are formed in a semiconductor substrate. First and second trenches in the first second wells, respectively, each extend vertically and include a central conductor insulated by a first insulating layer. A second insulating layer is formed on a top surface of the semiconductor substrate. The second insulating layer is selectively thinned over the second trench. A polysilicon layer is deposited on the second insulating layer and then lithographically patterned to form: a first polysilicon portion over the first well that is electrically connected to the central conductor of the first trench to form a first capacitor plate, a second capacitor plate formed by the first well; and a second polysilicon portion over the second well forming a floating gate electrode of a floating gate transistor of a memory cell having an access transistor whose control gate is formed by the central conductor of the second trench.
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公开(公告)号：US20210159318A1
公开(公告)日：2021-05-27
申请号：US17100559
申请日：2020-11-20
Inventor： Franck JULIEN , Stephan NIEL , Leo GAVE
Abstract: A method for manufacturing an electronic device includes locally implanting ionic species into a first region of a silicon nitride layer and into a first region of an electrically insulating layer located under the first region of the silicon nitride layer. A second region of the silicon nitride layer and a region of the electrically insulating layer located under the second region of the silicon nitride layer are protected from the implantation. The electrically insulating layer is disposed between a semi-conducting substrate and the silicon nitride layer. At least one trench is formed extending into the semi-conducting substrate through the silicon nitride layer and the electrically insulating layer. The trench separates the first region from the second region of the electrically insulating layer. The electrically insulating layer is selectively etched, and the etch rate of the electrically insulating layer in the first region is greater than the etch rate in the second region.
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9.发明申请公开(公告)号：US20210005613A1
公开(公告)日：2021-01-07
申请号：US17026874
申请日：2020-09-21
Inventor： Abderrezak MARZAKI , Arnaud REGNIER , Stephan NIEL , Quentin HUBERT , Thomas CABOUT
IPC: H01L27/108 , H01L29/66 , H01L49/02 , H01L29/94
Abstract: A capacitive element includes a trench extending vertically into a well from a first side. The trench is filled with a conductive central section clad with an insulating cladding. The capacitive element further includes a first conductive layer covering a first insulating layer that is located on the first side and a second conductive layer covering a second insulating layer that is located on the first conductive layer. The conductive central section and the first conductive layer are electrically connected to form a first electrode of the capacitive element. The second conductive layer and the well are electrically connected to form a second electrode of the capacitive element. The insulating cladding, the first insulating layer and the second insulating layer form a dielectric region of the capacitive element.
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10.发明申请公开(公告)号：US20210005612A1
公开(公告)日：2021-01-07
申请号：US17026869
申请日：2020-09-21
Inventor： Abderrezak MARZAKI , Arnaud REGNIER , Stephan NIEL , Quentin HUBERT , Thomas CABOUT
IPC: H01L27/108 , H01L29/66 , H01L49/02 , H01L29/94
Abstract: A capacitive element includes a trench extending vertically into a well from a first side. The trench is filled with a conductive central section clad with an insulating cladding. The capacitive element further includes a first conductive layer covering a first insulating layer that is located on the first side and a second conductive layer covering a second insulating layer that is located on the first conductive layer. The conductive central section and the first conductive layer are electrically connected to form a first electrode of the capacitive element. The second conductive layer and the well are electrically connected to form a second electrode of the capacitive element. The insulating cladding, the first insulating layer and the second insulating layer form a dielectric region of the capacitive element.
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