公开(公告)号：US20170256625A1

公开(公告)日：2017-09-07

申请号：US15601115

申请日：2017-05-22

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Pierre Caubet ,  Florian Domengie ,  Carlos Augusto Suarez Segovia ,  Aurelie Bajolet ,  Onintza Ros Bengoechea

IPC: H01L29/49 ,  H01L29/40

CPC classification number: H01L21/28088 ,  H01L29/4966

Abstract: Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition, equiaxed grains are produced. The substantially equiaxed structure for the metal nitride work function metal layer (such as with TiN) reduces local variability in threshold voltage.

公开(公告)号：US09029254B2

公开(公告)日：2015-05-12

申请号：US14032436

申请日：2013-09-20

Applicant: STMicroelectronics Crolles 2 SAS

Inventor： Pierre Caubet ,  Florian Domengie ,  Sylvain Baudot

IPC: H01L21/28 ,  H01L29/78 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/78 ,  H01L21/02266 ,  H01L21/02697 ,  H01L21/28088 ,  H01L29/66477

Abstract: A method for forming an aluminum titanium nitride layer on a wafer by plasma-enhanced physical vapor deposition including a first step at a radio frequency power ranging between 100 and 500 W only, and a second step at a radio frequency power ranging between 500 and 1,000 W superimposed to a D.C. power ranging between 500 and 1,000 W. An insulated gate comprising such an aluminum titanium nitride layer.

Abstract translation: 一种通过等离子体增强物理气相沉积在晶片上形成氮化铝钛层的方法，其包括仅在100至500W之间的射频功率范围内的第一步骤，以及范围在500和1,000之间的射频功率的第二步骤 W叠加到500和1,000W之间的DC功率。包括这种铝氮化钛层的绝缘栅极。

公开(公告)号：US20190259618A1

公开(公告)日：2019-08-22

申请号：US15898851

申请日：2018-02-19

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Florian Domengie ,  Pushpendra Kumar

IPC: H01L21/28 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49

Abstract: Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. The metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition with process parameters selected so as to produce grains of material exhibiting a uniaxial grain orientation. The uniaxial grain structure for the metal nitride work function metal layer (such as with TiN) reduces local variability in threshold voltage.

公开(公告)号：US20170179250A1

公开(公告)日：2017-06-22

申请号：US14973825

申请日：2015-12-18

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Pierre Caubet ,  Florian Domengie ,  Carlos Augusto Suarez Segovia ,  Aurelie Bajolet ,  Onintza Ros Bengoechea

IPC: H01L29/49 ,  H01L29/40

CPC classification number: H01L21/28088 ,  H01L29/4966

Abstract: Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition, equiaxed grains are produced. The substantially equiaxed structure for the metal nitride work function metal layer (such as with TiN) reduces local variability in threshold voltage.

公开(公告)号：US10211059B2

公开(公告)日：2019-02-19

申请号：US15601115

申请日：2017-05-22

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Pierre Caubet ,  Florian Domengie ,  Carlos Augusto Suarez Segovia ,  Aurelie Bajolet ,  Onintza Ros Bengoechea

IPC: H01L29/49 ,  H01L21/28

Abstract: Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition, equiaxed grains are produced. The substantially equiaxed structure for the metal nitride work function metal layer (such as with TiN) reduces local variability in threshold voltage.

公开(公告)号：US20190018191A1

公开(公告)日：2019-01-17

申请号：US16133064

申请日：2018-09-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sylvain Guerber ,  Charles Baudot ,  Florian Domengie

IPC: G02B6/122 ,  G02B6/43 ,  G02B6/30 ,  G02B6/26 ,  G02B6/14 ,  G02B6/138 ,  G02B6/13 ,  G02B6/126 ,  G02B6/12

Abstract: A photonic integrated circuit includes an optical coupling device situated between two successive interconnection metal levels. The optical coupling device includes a first optical portion that receives an optical signal having a transverse electric component in a fundamental mode and a transverse magnetic component. A second optical portion converts the transverse magnetic component of the optical signal into a converted transverse electric component in a higher order mode. A third optical portion separates the transverse electric component from the converted transverse electric component and switches the higher order mode to the fundamental mode. A fourth optical portion transmits the transverse electric component to one waveguide and transmits the converted transverse electric component to another waveguide.

公开(公告)号：US20180239088A1

公开(公告)日：2018-08-23

申请号：US15692571

申请日：2017-08-31

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sylvain Guerber ,  Charles Baudot ,  Florian Domengie

IPC: G02B6/122 ,  G02B6/26 ,  G02B6/30 ,  G02B6/43 ,  G02B6/138 ,  G02B6/13 ,  G02B6/14

CPC classification number: G02B6/1228 ,  G02B6/12002 ,  G02B6/126 ,  G02B6/13 ,  G02B6/138 ,  G02B6/14 ,  G02B6/262 ,  G02B6/305 ,  G02B6/43

Abstract: A photonic integrated circuit includes an optical coupling device situated between two successive interconnection metal levels. The optical coupling device includes a first optical portion that receives an optical signal having a transverse electric component in a fundamental mode and a transverse magnetic component. A second optical portion converts the transverse magnetic component of the optical signal into a converted transverse electric component in a higher order mode. A third optical portion separates the transverse electric component from the converted transverse electric component and switches the higher order mode to the fundamental mode. A fourth optical portion transmits the transverse electric component to one waveguide and transmits the converted transverse electric component to another waveguide.

公开(公告)号：US09691871B1

公开(公告)日：2017-06-27

申请号：US14973825

申请日：2015-12-18

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Pierre Caubet ,  Florian Domengie ,  Carlos Augusto Suarez Segovia ,  Aurelie Bajolet ,  Onintza Ros Bengoechea

IPC: H01L21/76 ,  H01L29/49 ,  H01L29/40

CPC classification number: H01L21/28088 ,  H01L29/4966

Abstract: Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition, equiaxed grains are produced. The substantially equiaxed structure for the metal nitride work function metal layer (such as with TiN) reduces local variability in threshold voltage.

公开(公告)号：US10261252B2

公开(公告)日：2019-04-16

申请号：US16133064

申请日：2018-09-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sylvain Guerber ,  Charles Baudot ,  Florian Domengie

IPC: G02B6/26 ,  G02B6/122 ,  G02B6/43 ,  G02B6/30 ,  G02B6/14 ,  G02B6/138 ,  G02B6/13 ,  G02B6/126 ,  G02B6/12

Abstract: A photonic integrated circuit includes an optical coupling device situated between two successive interconnection metal levels. The optical coupling device includes a first optical portion that receives an optical signal having a transverse electric component in a fundamental mode and a transverse magnetic component. A second optical portion converts the transverse magnetic component of the optical signal into a converted transverse electric component in a higher order mode. A third optical portion separates the transverse electric component from the converted transverse electric component and switches the higher order mode to the fundamental mode. A fourth optical portion transmits the transverse electric component to one waveguide and transmits the converted transverse electric component to another waveguide.

公开(公告)号：US10101528B2

公开(公告)日：2018-10-16

申请号：US15692571

申请日：2017-08-31

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sylvain Guerber ,  Charles Baudot ,  Florian Domengie

IPC: G02B6/26 ,  G02B6/122 ,  G02B6/30 ,  G02B6/14 ,  G02B6/138 ,  G02B6/13 ,  G02B6/43

Abstract: A photonic integrated circuit includes an optical coupling device situated between two successive interconnection metal levels. The optical coupling device includes a first optical portion that receives an optical signal having a transverse electric component in a fundamental mode and a transverse magnetic component. A second optical portion converts the transverse magnetic component of the optical signal into a converted transverse electric component in a higher order mode. A third optical portion separates the transverse electric component from the converted transverse electric component and switches the higher order mode to the fundamental mode. A fourth optical portion transmits the transverse electric component to one waveguide and transmits the converted transverse electric component to another waveguide.