Memory cell and corresponding device

    公开(公告)号:US09646713B2

    公开(公告)日:2017-05-09

    申请号:US15140023

    申请日:2016-04-27

    IPC分类号: G11C17/18

    摘要: A radiation hardened memory cell includes an odd number of storage elements configured to redundantly store an input data logic signal. The storage elements include output lines for outputting respective logic signals having respective logic values. A logic combination network receives the respective logic signals and is configured to generate an output signal having a same logic value as a majority of the logic signals output from the storage elements. An exclusive logic sum circuit receives the respective logic signals output from the storage elements and is configured to produce a refresh of the logic data signal as stored in the storage elements when one of the logic signals output from the storage elements undergoes a logic value transition due to an error event.

    CURRENT LIMITER, CORRESPONDING DEVICE AND METHOD

    公开(公告)号:US20180159317A1

    公开(公告)日:2018-06-07

    申请号:US15596465

    申请日:2017-05-16

    摘要: A power transistor supplying power to a load is coupled to a current limiter circuit including a differential amplifier that operates to detect a difference between a sense voltage, indicative of a load current, and a voltage reference. A control terminal of the power transistor is driven by a first output of the differential amplifier as a function of the detected difference. A voltage clamp circuit coupled to an input terminal generates a floating ground. A short-circuit protection circuit coupled to the floating ground and interposed between a second output of the differential amplifier and the control terminal of the power transistor provides a short-circuit protection for the first output of the differential amplifier. A reaction time circuit is coupled between the first and second outputs of the differential amplifier and a source terminal of the power transistor to limit a short-circuit current at the source terminal.

    High-voltage switching circuit, corresponding device and method

    公开(公告)号:US10374600B2

    公开(公告)日:2019-08-06

    申请号:US16122262

    申请日:2018-09-05

    摘要: First and second comparators receive input signals of opposed polarities and drive operation of a switch in response thereto. A first current generator supplies a first current to the switch which, in response to the control of the first and second comparators, applies the first current, alternatively, to a first node or a second node. A second current generator sinks a second current from the first node and a third current generator sinks a third current from the second node. A logic circuit has inputs coupled to the first node and the second node, respectively, receives respective switching signals having fast switching wavefronts and delayed switching wavefronts. The output of logic circuit is configured for switching between a first state and a second state with switching between the first state and the second state triggered by the fast switching wavefronts of the respective switching signals.

    MEMORY CELL AND CORRESPONDING DEVICE
    4.
    发明申请

    公开(公告)号:US20170178744A1

    公开(公告)日:2017-06-22

    申请号:US15446909

    申请日:2017-03-01

    IPC分类号: G11C17/18 G11C17/16

    摘要: A radiation hardened memory cell includes an odd number of storage elements configured to redundantly store an input data logic signal. The storage elements include output lines for outputting respective logic signals having respective logic values. A logic combination network receives the respective logic signals and is configured to generate an output signal having a same logic value as a majority of the logic signals output from the storage elements. An exclusive logic sum circuit receives the respective logic signals output from the storage elements and is configured to produce a refresh of the logic data signal as stored in the storage elements when one of the logic signals output from the storage elements undergoes a logic value transition due to an error event.

    MEMORY CELL AND CORRESPONDING DEVICE
    5.
    发明申请
    MEMORY CELL AND CORRESPONDING DEVICE 有权
    存储单元和相应的器件

    公开(公告)号:US20170011808A1

    公开(公告)日:2017-01-12

    申请号:US15140023

    申请日:2016-04-27

    IPC分类号: G11C17/18

    摘要: A radiation hardened memory cell includes an odd number of storage elements configured to redundantly store an input data logic signal. The storage elements include output lines for outputting respective logic signals having respective logic values. A logic combination network receives the respective logic signals and is configured to generate an output signal having a same logic value as a majority of the logic signals output from the storage elements. An exclusive logic sum circuit receives the respective logic signals output from the storage elements and is configured to produce a refresh of the logic data signal as stored in the storage elements when one of the logic signals output from the storage elements undergoes a logic value transition due to an error event.

    摘要翻译: 辐射硬化的存储单元包括被配置为冗余地存储输入数据逻辑信号的奇数个存储元件。 存储元件包括用于输出具有各自逻辑值的各个逻辑信号的输出线。 逻辑组合网络接收相应的逻辑信号,并且被配置为产生具有与从存储元件输出的逻辑信号的大部分相同的逻辑值的输出信号。 独占逻辑和电路接收从存储元件输出的相应逻辑信号,并且被配置为当从存储元件输出的逻辑信号之一经历逻辑值转换时,产生存储在存储元件中的逻辑数据信号的刷新 发生错误事件。

    Current limiter, corresponding device and method

    公开(公告)号:US10547171B2

    公开(公告)日:2020-01-28

    申请号:US15596465

    申请日:2017-05-16

    IPC分类号: H02H9/02 H02H7/00 H03K17/082

    摘要: A power transistor supplying power to a load is coupled to a current limiter circuit including a differential amplifier that operates to detect a difference between a sense voltage, indicative of a load current, and a voltage reference. A control terminal of the power transistor is driven by a first output of the differential amplifier as a function of the detected difference. A voltage clamp circuit coupled to an input terminal generates a floating ground. A short-circuit protection circuit coupled to the floating ground and interposed between a second output of the differential amplifier and the control terminal of the power transistor provides a short-circuit protection for the first output of the differential amplifier. A reaction time circuit is coupled between the first and second outputs of the differential amplifier and a source terminal of the power transistor to limit a short-circuit current at the source terminal.

    High voltage comparison circuit
    8.
    发明授权
    High voltage comparison circuit 有权
    高压比较电路

    公开(公告)号:US09356587B2

    公开(公告)日:2016-05-31

    申请号:US14622322

    申请日:2015-02-13

    IPC分类号: H03K5/22 H03K5/153 H03K5/125

    CPC分类号: H03K5/125 H03K5/2436

    摘要: A high voltage comparison circuit includes an input stage generating an intermediate signal as a result of a comparison between an input signal and a first voltage reference and an output stage configured to generate an output signal referenced to a second voltage reference (different from the first voltage reference) in response to the intermediate signal.

    摘要翻译: 高电压比较电路包括作为输入信号和第一参考电压之间的比较的结果产生中间信号的输入级和被配置为产生参考第二参考电压的输出信号(不同于第一电压 参考)响应于中间信号。

    Level shifter circuit, corresponding device and method

    公开(公告)号:US10447268B2

    公开(公告)日:2019-10-15

    申请号:US16112948

    申请日:2018-08-27

    摘要: A level-shifter circuit operates to shift an input signal referenced to a first set supply voltages to generate an output signal referenced to a second set of supply voltages. The output signal from the level-shifter circuit is latched by a latching circuit. A logic gate has a first input configured to receive the input signal, a second input configured to receive a feedback signal and an output coupled to a input of the level shifting circuit. A feedback circuit has a first input configured to receive the output signal, a second input configured to receive the input signal and an output configured to generate the feedback signal. The feedback circuit operates to sense an uncontrolled switching event of the output signal occurring in the absence of a switching of the input signal and apply, in response thereto, the feedback signal to cancel the uncontrolled switching event.