公开(公告)号：US20140167060A1

公开(公告)日：2014-06-19

申请号：US14104317

申请日：2013-12-12

Applicant: STMicroelectronics S.r.l.

Inventor： Antonello Santangelo ,  Marcello Francesco Salvatore Giuffrida

IPC: H01L27/06 ,  H01L29/808 ,  H01L29/78 ,  H01L29/778

CPC classification number: H01L27/0617 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L27/0605 ,  H01L27/088 ,  H01L27/098 ,  H01L29/778 ,  H01L29/7816 ,  H01L29/808 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49111 ,  H01L2224/49112 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/1033 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/13062 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: An electronic power component including a normally on high-voltage transistor and a normally off low-voltage transistor. The normally on transistor and the normally off transistor are coupled in cascode configuration and are housed in a single package. The normally off transistor is of the bottom-source type.

Abstract translation: 一种电子功率元件，包括通常在高压晶体管和常关的低压晶体管。 通常在晶体管和常关晶体管以共成型配置耦合并且容纳在单个封装中。 常闭晶体管是底部源型。

公开(公告)号：US09418984B2

公开(公告)日：2016-08-16

申请号：US14104317

申请日：2013-12-12

Applicant: STMicroelectronics S.r.l.

Inventor： Antonello Santangelo ,  Marcello Francesco Salvatore Giuffrida

IPC: H01L21/00 ,  H01L27/06 ,  H01L23/495 ,  H01L27/088 ,  H01L27/098 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L23/00

CPC classification number: H01L27/0617 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L27/0605 ,  H01L27/088 ,  H01L27/098 ,  H01L29/778 ,  H01L29/7816 ,  H01L29/808 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49111 ,  H01L2224/49112 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/1033 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/13062 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: An electronic power component including a normally on high-voltage transistor and a normally off low-voltage transistor. The normally on transistor and the normally off transistor are coupled in cascode configuration and are housed in a single package. The normally off transistor is of the bottom-source type.

Abstract translation: 一种电子功率元件，包括通常在高压晶体管和常关的低压晶体管。 通常在晶体管和常关晶体管以共成型配置耦合并且容纳在单个封装中。 常闭晶体管是底部源型。