专利检索 ap:("SUMITOMO ELECTRIC HARDMETAL CORP.") AND inv:"Takuya Nohara" 第 1 页

1.

发明授权
Single-crystal diamond, tool using same, and method of producing single-crystal diamond 有权

公开(公告)号：US10569317B2

公开(公告)日：2020-02-25

申请号：US15753241

申请日：2016-10-14

申请人： Sumitomo Electric Industries, Ltd. , SUMITOMO ELECTRIC HARDMETAL CORP.

发明人： Yoshiki Nishibayashi , Natsuo Tatsumi , Takuya Nohara , Yutaka Kobayashi , Akihiko Ueda

IPC分类号： B21C3/02 , B23B27/20 , C30B29/04 , C23C16/27 , C23C16/56 , C30B25/02

摘要： A single-crystal diamond includes a pair of main surfaces facing each other, an impurity concentration being changed along a first direction in each of the main surfaces.

2.

外观设计
Cutting tool 有权

公开(公告)号：USD977540S1

公开(公告)日：2023-02-07

申请号：US29796251

申请日：2021-06-23

申请人： SUMITOMO ELECTRIC HARDMETAL CORP.

设计人： Takuya Nohara , Mayuka Segawa , Soichiro Kakinoki , Yoshinori Tanigawa , Gaku Harada , Takashi Harada , Satoru Kukino , Akihiko Ueda

3.

发明申请
SINGLE-CRYSTAL DIAMOND, METHOD FOR MANUFACTURING SINGLE-CRYSTAL DIAMOND, AND CHEMICAL VAPOR DEPOSITION DEVICE USED IN SAME 审中-公开

公开(公告)号：US20190031515A1

公开(公告)日：2019-01-31

申请号：US16071564

申请日：2017-01-18

申请人： Sumitomo Electric Industries, Ltd. , SUMITOMO ELECTRIC HARDMETAL CORP.

发明人： Takuya Nohara , Natsuo Tatsumi , Yoshiki Nishibayashi , Hitoshi Sumiya , Yutaka Kobayashi , Akihiko Ueda

IPC分类号： C01B32/26 , C30B29/04 , C30B25/08 , C30B25/20 , C23C16/01 , C23C16/27 , C30B25/18 , C23C16/458

摘要： Provided is a method for manufacturing a single-crystal diamond, the method including the steps of: forming a protective film on at least a part of a surface of an auxiliary plate; preparing a diamond seed crystal substrate; disposing an auxiliary plate with a protective film that has the protective film formed on the auxiliary plate, and a diamond seed crystal substrate in a chamber; and growing a single-crystal diamond on a principal surface of the diamond seed crystal substrate by a chemical vapor deposition method while introducing a carbon-containing gas into the chamber.

4.

发明申请
SINGLE-CRYSTAL DIAMOND, TOOL USING SAME, AND METHOD OF PRODUCING SINGLE-CRYSTAL DIAMOND 审中-公开

公开(公告)号：US20180236515A1

公开(公告)日：2018-08-23

申请号：US15753241

申请日：2016-10-14

申请人： Sumitomo Electric Industries, Ltd. , SUMITOMO ELECTRIC HARDMETAL CORP.

发明人： Yoshiki Nishibayashi , Natsuo Tatsumi , Takuya Nohara , Yutaka Kobayashi , Akihiko Ueda

IPC分类号： B21C3/02 , B23B27/20 , C23C16/27 , C23C16/56 , C30B29/04 , C30B25/02

摘要： A single-crystal diamond includes a pair of main surfaces facing each other, an impurity concentration being changed along a first direction in each of the main surfaces.

5.

外观设计
Cutting tool 有权

公开(公告)号：USD957484S1

公开(公告)日：2022-07-12

申请号：US29718005

申请日：2019-12-20

申请人： SUMITOMO ELECTRIC HARDMETAL CORP.

设计人： Takuya Nohara

6.

发明授权
Single-crystal diamond, method for manufacturing single-crystal diamond, and chemical vapor deposition device used in same 有权

公开(公告)号：US10737943B2

公开(公告)日：2020-08-11

申请号：US16071564

申请日：2017-01-18

申请人： Sumitomo Electric Industries, Ltd. , SUMITOMO ELECTRIC HARDMETAL CORP.

发明人： Takuya Nohara , Natsuo Tatsumi , Yoshiki Nishibayashi , Hitoshi Sumiya , Yutaka Kobayashi , Akihiko Ueda

IPC分类号： C01B32/26 , C23C16/01 , C30B25/08 , C30B25/20 , C30B29/04 , H01L21/205 , A44C27/00 , C30B25/12 , C23C16/02 , C23C16/27 , C23C16/458 , C30B25/18

摘要： Provided is a method for manufacturing a single-crystal diamond, the method including the steps of: forming a protective film on at least a part of a surface of an auxiliary plate; preparing a diamond seed crystal substrate; disposing an auxiliary plate with a protective film that has the protective film formed on the auxiliary plate, and a diamond seed crystal substrate in a chamber; and growing a single-crystal diamond on a principal surface of the diamond seed crystal substrate by a chemical vapor deposition method while introducing a carbon-containing gas into the chamber.