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公开(公告)号：US20230357957A1
公开(公告)日：2023-11-09
申请号：US17780702
申请日：2020-11-10
发明人： Kyoko OKITA , Tsubasa HONKE , Shunsaku UETA
IPC分类号： C30B29/36 , H01L29/16 , H01L29/34 , H01L21/306 , C30B33/10 , C01B32/956
CPC分类号： C30B29/36 , H01L29/1608 , H01L29/34 , H01L21/30625 , C30B33/10 , C01B32/956 , C01P2006/80
摘要： A silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The silicon carbide substrate includes screw dislocations and pits having a maximum diameter of 1 μm or more and 10 μm or less in a direction parallel to the first main surface. When the screw dislocations and the pits are observed in the first main surface, a percentage obtained by dividing a number of the pits by a number of the screw dislocations is 1% or less. A concentration of magnesium in the first main surface is less than 1×1011 atoms/cm2.
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公开(公告)号：US20240234509A9
公开(公告)日：2024-07-11
申请号：US18278421
申请日：2021-11-24
发明人： Kyoko OKITA , Tsubasa HONKE , Shunsaku UETA
IPC分类号： H01L29/16 , H01L21/306
CPC分类号： H01L29/1608 , H01L21/30625
摘要： A silicon carbide substrate includes a first main surface, a second main surface, a threading screw dislocation, and a blind scratch. The second main surface is located opposite to the first main surface. The threading screw dislocation extends to each of the first main surface and the second main surface. The blind scratch is exposed at the first main surface and extends linearly as viewed in a direction perpendicular to the first main surface. A value obtained by dividing an area density of the blind scratch by an area density of threading screw dislocation is smaller than 0.13.
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公开(公告)号：US20220170179A1
公开(公告)日：2022-06-02
申请号：US17617126
申请日：2020-05-27
发明人： Tsubasa HONKE
IPC分类号： C30B29/36 , H01L21/321
摘要： A silicon carbide substrate is a silicon carbide substrate including: a first main surface, a shape of the first main surface before the orientation flat is provided being a circle. An average value of LTVs of a plurality of first square regions of a plurality of square regions is less than or equal to 0.75 μm, the plurality of first square regions being disposed in a form of a ring on an outermost side with respect to the center of the circle so as to form an outermost periphery when the central region of the first main surface is divided into the plurality of square regions to provide a largest number of square regions, each of the square regions exactly forming a square having each side of 5 mm.
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4.发明申请公开(公告)号：US20150010726A1
公开(公告)日：2015-01-08
申请号：US14284527
申请日：2014-05-22
发明人： Tsubasa HONKE , Kyoko OKITA , Tomohiro KAWASE , Tsutomu HORI
CPC分类号： H01L29/1608 , C30B23/00 , C30B23/002 , C30B23/025 , C30B23/066 , C30B29/36 , H01L29/045 , Y10T428/21
摘要： Quality of a silicon carbide single crystal is improved. A crucible having first and second sides is prepared. A solid source material for growing silicon carbide with a sublimation method is arranged on the first side. A seed crystal made of silicon carbide is arranged on the second side. The crucible is arranged in a heat insulating container. The heat insulating container has an opening facing the second side. The crucible is heated such that the solid source material sublimes. A temperature on the second side is measured through the opening in the heat insulating container. The opening has a tapered inner surface narrowed toward the outside of the heat insulating container.
摘要翻译： 改善了碳化硅单晶的质量。 制备具有第一和第二面的坩埚。 在第一面上设置用于生长碳化硅的升华方法的固体源材料。 由碳化硅制成的籽晶布置在第二面上。 坩埚布置在隔热容器中。 隔热容器具有面向第二面的开口。 将坩埚加热使得固体源材料升华。 通过隔热容器的开口测量第二面的温度。 该开口具有朝向绝热容器的外侧变窄的锥形内表面。
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公开(公告)号：US20140030874A1
公开(公告)日：2014-01-30
申请号：US13915109
申请日：2013-06-11
发明人： Tsubasa HONKE , Taro NISHIGUCHI , Tsutomu HORI
IPC分类号： H01L21/02
CPC分类号： H01L21/02529 , C30B23/00 , C30B29/36
摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing a seed substrate made of silicon carbide; etching a main surface of the seed substrate prepared; obtaining an ingot by growing a silicon carbide single crystal film on a crystal growth surface formed by etching the main surface of the seed substrate;and obtaining a silicon carbide substrate by cutting the ingot. The step of etching the seed substrate includes: a first etching step of removing silicon atoms, which form the silicon carbide, from an etching region using chlorine gas, the etching region being a region including the main surface of the seed substrate; and a second etching step of removing carbon atoms, which form the silicon carbide, from the etching region from which the silicon atoms have been removed, using oxygen gas.
摘要翻译： 一种制造碳化硅衬底的方法包括以下步骤：制备由碳化硅制成的晶种衬底; 蚀刻准备的种子底物的主表面; 通过在通过蚀刻种子基板的主表面形成的晶体生长表面上生长碳化硅单晶膜来获得锭; 并通过切割锭获得碳化硅衬底。 蚀刻种子基板的步骤包括：从蚀刻区域使用氯气去除形成碳化硅的硅原子的第一蚀刻步骤，所述蚀刻区域是包括种子基板的主表面的区域; 以及使用氧气从去除硅原子的蚀刻区域除去形成碳化硅的碳原子的第二蚀刻步骤。
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6.发明公开公开(公告)号：US20240363696A1
公开(公告)日：2024-10-31
申请号：US18563422
申请日：2022-05-16
发明人： Hiroki NISHIHARA , Tsubasa HONKE , Takaya MIYASE , Taro ENOKIZONO
IPC分类号： H01L29/34 , H01L29/16 , H01L29/739
CPC分类号： H01L29/34 , H01L29/1608 , H01L29/7397
摘要： A silicon carbide epitaxial substrate includes a silicon carbide substrate and a silicon carbide epitaxial layer. The silicon carbide epitaxial layer is on the silicon carbide substrate. The silicon carbide epitaxial layer has a main surface located opposite to an interface between the silicon carbide substrate and the silicon carbide epitaxial layer. An area density of a pit in the main surface is 1/cm2 or less. An area density of a bump in the main surface is less than 0.7/cm2. An area of the pit is 100 μm2 or less, and an area of the bump is 100 μm2 or less when viewed in a direction perpendicular to the main surface. A depth of the pit is 0.01 μm to 0.1 μm and a height of the bump is 0.01 μm to 0.1 μm in the direction perpendicular to the main surface.
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公开(公告)号：US20240145229A1
公开(公告)日：2024-05-02
申请号：US18280207
申请日：2021-11-09
发明人： Kyoko OKITA , Tsubasa HONKE , Shunsaku UETA
CPC分类号： H01L21/02019 , H01L29/34 , H01L29/1608
摘要： A silicon carbide substrate includes a first main surface, a second main surface, and an outer peripheral surface. When a defect, in the first main surface, observed using a mirror electron microscope while irradiating the first main surface with an ultraviolet ray is a first defect and a defect, in the first main surface, observed using molten potassium hydroxide is a second defect, a value obtained by dividing an area density of the first defect by an area density of the second defect is more than 0.9 and less than 1.2. The first defect consists of a first blind scratch, a first basal plane dislocation spaced apart from the first blind scratch, a second basal plane dislocation in contact with the first blind scratch, and a second blind scratch spaced apart from each of the first basal plane dislocation and the second basal plane dislocation.
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公开(公告)号：US20240136403A1
公开(公告)日：2024-04-25
申请号：US18278421
申请日：2021-11-24
发明人： Kyoko OKITA , Tsubasa HONKE , Shunsaku UETA
IPC分类号： H01L29/16 , H01L21/306
CPC分类号： H01L29/1608 , H01L21/30625
摘要： A silicon carbide substrate includes a first main surface, a second main surface, a threading screw dislocation, and a blind scratch. The second main surface is located opposite to the first main surface. The threading screw dislocation extends to each of the first main surface and the second main surface. The blind scratch is exposed at the first main surface and extends linearly as viewed in a direction perpendicular to the first main surface. A value obtained by dividing an area density of the blind scratch by an area density of threading screw dislocation is smaller than 0.13.
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9.发明公开公开(公告)号：US20240274434A1
公开(公告)日：2024-08-15
申请号：US18563408
申请日：2022-05-16
发明人： Hiroki NISHIHARA , Tsubasa HONKE , Takaya MIYASE , Taro ENOKIZONO
IPC分类号： H01L21/02 , H01L21/322
CPC分类号： H01L21/02378 , H01L21/02529 , H01L21/322
摘要： A silicon carbide epitaxial substrate includes a silicon carbide substrate and a silicon carbide epitaxial layer. A plurality of square regions are constituted of a plurality of outer peripheral regions located at an outermost periphery of the plurality of square regions and a plurality of central regions surrounded by the plurality of outer peripheral regions. When a maximum value of LTIR of the silicon carbide epitaxial substrate in the plurality of outer peripheral regions is defined as a first value and a maximum value of LTIR of the silicon carbide epitaxial substrate in the plurality of central regions is defined as a second value, a value obtained by dividing the first value by the second value is 0.8 to 1.2. An area density of a pit in a second main surface is 0.5/cm2 or less.
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公开(公告)号：US20220220638A1
公开(公告)日：2022-07-14
申请号：US17611139
申请日：2020-04-01
发明人： Kyoko OKITA , Tsubasa HONKE
摘要： A silicon carbide substrate in accordance with the present disclosure includes a main surface. The silicon carbide substrate has a maximum diameter of 150 mm or more. In the main surface, a total area of a region in which a concentration of each of sodium, aluminum, potassium, calcium, titanium, iron, copper, and zinc is less than 5×1010 atoms/cm2 is more than or equal to 95% of an area of the main surface.
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