公开(公告)号：US20170040197A1

公开(公告)日：2017-02-09

申请号：US15228754

申请日：2016-08-04

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Tetsuya Kudo ,  Shinji Ebisu ,  Yoshito Fujii

IPC: H01L21/677 ,  H01L21/68 ,  C23C14/48 ,  H01L21/67

CPC classification number: H01L21/67778 ,  C23C14/48 ,  H01J2237/184 ,  H01J2237/20207 ,  H01J2237/204 ,  H01J2237/31701 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67213 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67766 ,  H01L21/68 ,  H01L21/68764

Abstract: A first conveyance mechanism and a second conveyance mechanism convey a pair of two wafers to an alignment device from a wafer container via a buffer device, and then bring the wafers respectively into a first load lock chamber and a second load lock chamber after alignment. An intermediate conveyance mechanism conveys one of the pair of two wafers between the first load lock chamber and a vacuum processing chamber. The intermediate conveyance mechanism conveys the other of the pair of two wafers between the second load lock chamber and the vacuum processing chamber. The first conveyance mechanism and the second conveyance mechanism take out the pair of two wafers subjected to an implantation process from the first load lock chamber and the second load lock chamber and store the wafers into the wafer container.

Abstract translation: 第一传送机构和第二传送机构经由缓冲装置从晶片容器将一对两个晶片传送到对准装置，然后在对准之后将晶片分别带入第一负载锁定室和第二负载锁定室。 中间输送机构在第一负载锁定室和真空处理室之间输送一对两个晶片中的一个。 中间输送机构将两对晶片中的另一方输送到第二负载锁定室和真空处理室之间。 第一输送机构和第二输送机构从第一负载锁定室和第二负载锁定室取出经受了植入处理的一对两个晶片，并将晶片储存在晶片容器中。

公开(公告)号：US10468283B2

公开(公告)日：2019-11-05

申请号：US15228754

申请日：2016-08-04

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Tetsuya Kudo ,  Shinji Ebisu ,  Yoshito Fujii

IPC: H01L21/67 ,  H01L21/677 ,  C23C14/48 ,  H01L21/68 ,  H01L21/687

Abstract: A first conveyance mechanism and a second conveyance mechanism convey a pair of two wafers to an alignment device from a wafer container via a buffer device, and then bring the wafers respectively into a first load lock chamber and a second load lock chamber after alignment. An intermediate conveyance mechanism conveys one of the pair of two wafers between the first load lock chamber and a vacuum processing chamber. The intermediate conveyance mechanism conveys the other of the pair of two wafers between the second load lock chamber and the vacuum processing chamber. The first conveyance mechanism and the second conveyance mechanism take out the pair of two wafers subjected to an implantation process from the first load lock chamber and the second load lock chamber and store the wafers into the wafer container.

公开(公告)号：US20150364299A1

公开(公告)日：2015-12-17

申请号：US14740928

申请日：2015-06-16

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Yoshito Fujii ,  Tetsuya Kudo ,  Shinji Ebisu ,  Suguru Hirokawa ,  Keiji Okada

IPC: H01J37/317 ,  H01J37/20

CPC classification number: H01J37/3171 ,  H01J37/185 ,  H01J37/20 ,  H01J2237/202 ,  H01J2237/31701

Abstract: Provided is an ion implantation apparatus including: a vacuum processing chamber in which an ion implantation process for a wafer is performed; one or more load lock chambers that are used for bringing the wafer into the vacuum processing chamber and taking out the wafer from the vacuum processing chamber; an intermediate conveyance chamber that is disposed to be adjacent to both the vacuum processing chamber and the load lock chamber; a load lock chamber-intermediate conveyance chamber communication mechanism including a gate valve capable of sealing a load lock chamber-intermediate conveyance chamber communication port; and an intermediate conveyance chamber-vacuum processing chamber communication mechanism including a movable shielding plate capable of shielding a part or the whole of the intermediate conveyance chamber-vacuum processing chamber communication port.

Abstract translation: 提供了一种离子注入装置，包括：真空处理室，其中执行晶片的离子注入工艺; 用于将晶片带入真空处理室并从真空处理室取出晶片的一个或多个负载锁定室; 设置成与真空处理室和负载锁定室相邻设置的中间输送室; 负载锁定室 - 中间输送室连通机构，包括能够密封负载锁定室 - 中间输送室连通口的闸阀; 以及中间输送室 - 真空处理室连通机构，其包括能够屏蔽中间输送室 - 真空处理室连通口的一部分或全部的可动屏蔽板。

公开(公告)号：US09666413B2

公开(公告)日：2017-05-30

申请号：US14740928

申请日：2015-06-16

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Yoshito Fujii ,  Tetsuya Kudo ,  Shinji Ebisu ,  Suguru Hirokawa ,  Keiji Okada

IPC: H01J37/20 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/185 ,  H01J37/20 ,  H01J2237/202 ,  H01J2237/31701

Abstract: Provided is an ion implantation apparatus including: a vacuum processing chamber in which an ion implantation process for a wafer is performed; one or more load lock chambers that are used for bringing the wafer into the vacuum processing chamber and taking out the wafer from the vacuum processing chamber; an intermediate conveyance chamber that is disposed to be adjacent to both the vacuum processing chamber and the load lock chamber; a load lock chamber-intermediate conveyance chamber communication mechanism including a gate valve capable of sealing a load lock chamber-intermediate conveyance chamber communication port; and an intermediate conveyance chamber-vacuum processing chamber communication mechanism including a movable shielding plate capable of shielding a part or the whole of the intermediate conveyance chamber-vacuum processing chamber communication port.