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公开(公告)号:US11471987B2
公开(公告)日:2022-10-18
申请号:US17264705
申请日:2019-08-02
Applicant: SUMITOMO OSAKA CEMENT CO., LTD.
Inventor: Keisuke Maeda , Masaki Ozaki , Masayuki Shiojiri , Takeshi Watanabe , Shinichi Maeta , Yuuki Kinpara
IPC: B23Q3/15 , H01J37/32 , H01L21/683
Abstract: An electrostatic chuck device comprising a mounting table having a mounting surface, a focus ring; and a cooling element, wherein the mounting table has a holding portion surrounding the mounting surface, the holding portion has an annular groove portion having a through-hole, the holding portion has inner and outer peripheral surfaces which hold the focus ring and are located on both sides of the groove portion, the holding surface satisfies conditions (i) and (ii), (i) a straight line connecting a first point corresponding to an innermost periphery of the holding surface and a second point corresponding to an outermost periphery of the holding surface has a positive or a negative inclination from the innermost periphery toward the outermost periphery, wherein a difference between a height of the first point and a height of the second point is 0 μm to 10 μm, and (ii) leak areas of the inner peripheral surface and the outer peripheral surface are less than 0.7 mm2.
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公开(公告)号:US11664261B2
公开(公告)日:2023-05-30
申请号:US16649611
申请日:2018-09-12
Applicant: SUMITOMO OSAKA CEMENT CO., LTD.
Inventor: Mamoru Kosakai , Masaki Ozaki , Keisuke Maeda
IPC: H01L21/683 , H01J37/32 , H01L21/67 , H01L21/687
CPC classification number: H01L21/6833 , H01J37/3255 , H01J37/32697 , H01J37/32706 , H01J37/32715 , H01J37/32724 , H01L21/67103 , H01L21/68714
Abstract: An object of the present invention is to reduce non-uniformity of etching in a plane of a wafer. An electrostatic chuck device includes: an electrostatic chuck part having a sample mounting surface on which a sample is mounted and having a first electrode for electrostatic attraction; a cooling base part placed on a side opposite to the sample mounting surface with respect to the electrostatic chuck part to cool the electrostatic chuck part; and an adhesive layer that bonds the electrostatic chuck part and the cooling base part together, in which the cooling base part has a function of a second electrode that is an RF electrode, a third electrode for RF electrode or LC adjustment is provided between the electrostatic chuck part and the cooling base part, and the third electrode is bonded to the electrostatic chuck part and the cooling base part and insulated from the cooling base part.
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公开(公告)号:US11328948B2
公开(公告)日:2022-05-10
申请号:US16761891
申请日:2019-07-19
Applicant: SUMITOMO OSAKA CEMENT CO., LTD.
Inventor: Masaki Ozaki , Norito Morishita
IPC: H01T23/00 , H01L21/683 , B23Q3/15 , H01L21/67 , H01L21/687 , H02N13/00
Abstract: An electrostatic chuck device (1) including: an electrostatic chuck part (2) which includes a base material (11) having a mounting surface (11a) on which a plate-like sample W is mounted, and an internal electrostatic attraction electrode (13) which electrostatically attracts the plate-like sample (W) to the mounting surface (11a); a cooling base part (3) which is configured to cool the electrostatic chuck part (2); and an adhesive layer (4) which is interposed therebetween, in which a shape of the mounting surface of the base material (11) includes a concave surface (23) or a convex surface, which is a curved surface that gradually curves from a center (11b) of the mounting surface (11a) toward an outer periphery (11c) of the mounting surface (11a) and includes no inflection point, and an absolute value of a difference between a height of a center of the concave surface (23) or the convex surface from a position of a main surface (3a) of the cooling base part (3) as a reference and a height of an outer periphery of the concave surface (23) or the convex surface from the position of the main surface (3a) of the cooling base part (3) as a reference is 1 μm or higher and 30 μm or lower.
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公开(公告)号:US11887877B2
公开(公告)日:2024-01-30
申请号:US16649969
申请日:2018-09-26
Applicant: SUMITOMO OSAKA CEMENT CO., LTD.
Inventor: Mamoru Kosakai , Masaki Ozaki , Keisuke Maeda
IPC: H01L21/683 , H01L21/3065 , H01L21/67 , H01L21/768 , H01J37/32 , H02N13/00
CPC classification number: H01L21/6833 , H01J37/32091 , H01L21/3065 , H01L21/67098 , H01L21/76826 , H02N13/00
Abstract: An electrostatic chuck device includes: an electrostatic chuck part having a sample placing surface on which a sample is placed and having a first electrode for electrostatic attraction; a cooling base part placed on a side opposite to the sample placing surface with respect to the electrostatic chuck part to cool the electrostatic chuck part; and an adhesive layer that bonds the electrostatic chuck part and the cooling base part together, in which the electrostatic chuck part has a recess and protrusion on the adhesive layer side, and a sheet resistance value of the first electrode is higher than 1.0Ω/□ and lower than 1.0×1010Ω/□.
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公开(公告)号:US11848223B2
公开(公告)日:2023-12-19
申请号:US16970615
申请日:2019-02-19
Applicant: SUMITOMO OSAKA CEMENT CO., LTD.
Inventor: Hironori Kugimoto , Masaki Ozaki , Takeshi Watanabe , Kentaro Takahashi
IPC: H01L21/683 , H01J37/32 , H01L21/67
CPC classification number: H01L21/6833 , H01J37/32642 , H01J37/32715 , H01J37/32724 , H01L21/67069 , H01J2237/002 , H01J2237/2007
Abstract: An electrostatic chuck device includes: a mounting table provided with amounting surface on which a plate-shaped sample is mounted; an annular focus ring; and a cooling element for cooling the focus ring, in which the mounting table has a holding portion provided to surround the mounting surface, and the holding portion includes an annular groove surrounding the mounting surface, and a through-hole that is open on a bottom surface of the groove, wherein a tubular insulator has been inserted into the through-hole, the holding portion has upper surfaces, which are located on both sides of the groove in a width direction, as holding surfaces that are in contact with the focus ring and hold the focus ring, wherein the holding surface satisfies the following conditions (i) to (iii); (i) surface roughness is 0.05 μm or less, (ii) a flatness is 20 μm or less, and (iii) the holding surface does not have a recess having a depth of 1.0 μm or more and extending in a direction intersecting the holding surface.
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