公开(公告)号：US11837489B2

公开(公告)日：2023-12-05

申请号：US16981622

申请日：2019-03-22

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Hironori Kugimoto ,  Norito Morishita

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01J37/32724 ,  H01L21/68757

Abstract: The electrostatic chuck device includes: a base having one main surface serving as a mounting surface on which a plate-shaped sample is mounted; and an electrode for electrostatic attraction provided on a side opposite to the mounting surface in the base or in an interior of the base, in which the electrode for electrostatic attraction is made of a composite sintered body that includes a matrix phase having insulation properties and a dispersed phase having a lower volume resistivity value than the matrix phase, in any cross section of the composite sintered body, a region of the dispersed phase, which is surrounded by the matrix phase and is independent, includes aggregated portions having a maximum Feret diameter of 30 μm or more, and one or more of the aggregated portions are present in a range of 2500 μm2 in any cross section of the sintered body.

公开(公告)号：US11551962B2

公开(公告)日：2023-01-10

申请号：US17041905

申请日：2019-03-28

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Mamoru Kosakai ,  Nobuhiro Hidaka ,  Naoto Kimura ,  Hironori Kugimoto

IPC: H01L21/683 ,  C04B35/117 ,  H02N13/00

Abstract: A ceramic substrate made of a dielectric material including silicon carbide particles, which is used as a forming material, in which the number of the silicon carbide particles per unit area on the surface of the substrate is smaller than the number of the silicon carbide particles per unit area in a cross section of the substrate.

公开(公告)号：US11107719B2

公开(公告)日：2021-08-31

申请号：US16069141

申请日：2017-01-12

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Nobuhiro Hidaka ,  Hironori Kugimoto ,  Mamoru Kosakai

IPC: H01L21/683 ,  C04B35/103 ,  C04B35/111 ,  C04B35/626 ,  H01L21/687 ,  C04B35/117 ,  C04B35/645

Abstract: An electrostatic chuck device includes: a base having one principal surface which is a placing surface on which a plate-shaped sample is placed, wherein the base is made from a sintered compact of ceramic particles, which include silicon carbide particles and aluminum oxide particles, as a forming material; and an electrostatic attraction electrode which is provided on a surface of the base on the side opposite to the placing surface of the base, or in the interior of the base, in which the volume resistivity value of the sintered compact is 0.5×1015 Ωcm or more in the entire range from 24° C. to 300° C., a graph which shows the relationship of the volume resistivity value of the sintered compact to a temperature at which the volume resistivity value of the sintered compact is measured has a maximum value in the range from 24° C. to 300° C., and the amount of metal impurities in the sintered compact other than aluminum and silicon in the sintered compact is 100 ppm or less.

公开(公告)号：US10861730B2

公开(公告)日：2020-12-08

申请号：US15556556

申请日：2016-02-04

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Hironori Kugimoto

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/67

Abstract: An object is to provide an electrostatic chuck device having high heat resistance, which can be used even under high-temperature environment. An electrostatic chuck device includes: an electrostatic chuck section having a placing surface for placing a plate-shaped sample on one main surface thereof and an electrode for electrostatic adsorption; a temperature-controlling base section which is provided on the other side of the electrostatic chuck section in relation to the placing surface to cool the electrostatic chuck section; a heater element which is provided in a form of a layer between the electrostatic chuck section and the temperature-controlling base section; and a first adhesive layer which is provided between the heater element and the electrostatic chuck section to adhere the heater element and the electrostatic chuck section to each other, in which the first adhesive layer is made of inorganic glass or an inorganic material having a partially crystallized glass structure.

公开(公告)号：US11848223B2

公开(公告)日：2023-12-19

申请号：US16970615

申请日：2019-02-19

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Hironori Kugimoto ,  Masaki Ozaki ,  Takeshi Watanabe ,  Kentaro Takahashi

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67069 ,  H01J2237/002 ,  H01J2237/2007

Abstract: An electrostatic chuck device includes: a mounting table provided with amounting surface on which a plate-shaped sample is mounted; an annular focus ring; and a cooling element for cooling the focus ring, in which the mounting table has a holding portion provided to surround the mounting surface, and the holding portion includes an annular groove surrounding the mounting surface, and a through-hole that is open on a bottom surface of the groove, wherein a tubular insulator has been inserted into the through-hole, the holding portion has upper surfaces, which are located on both sides of the groove in a width direction, as holding surfaces that are in contact with the focus ring and hold the focus ring, wherein the holding surface satisfies the following conditions (i) to (iii); (i) surface roughness is 0.05 μm or less, (ii) a flatness is 20 μm or less, and (iii) the holding surface does not have a recess having a depth of 1.0 μm or more and extending in a direction intersecting the holding surface.

公开(公告)号：US11842914B2

公开(公告)日：2023-12-12

申请号：US16480264

申请日：2018-02-19

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Nobuhiro Hidaka ,  Hironori Kugimoto

IPC: H01L21/683 ,  C04B35/103 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/6833 ,  C04B35/103 ,  H01J37/32724 ,  H01L21/67103 ,  C04B2235/3217 ,  C04B2235/3826 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/85 ,  C04B2235/9669 ,  H01J2237/002

Abstract: This composite sintered body is a ceramic composite sintered body which includes aluminum oxide which is a main phase, and silicon carbide which is a sub-phase, the composite sintered body including an interface layer which includes, as a forming material, a material other than the aluminum oxide and the silicon carbide, at an interface between a crystal grain of the aluminum oxide and a crystal grain of the silicon carbide in a grain boundary.

公开(公告)号：US11784079B2

公开(公告)日：2023-10-10

申请号：US16619921

申请日：2018-06-28

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Nobuhiro Hidaka ,  Hironori Kugimoto

IPC: H01L21/683 ,  C04B35/117 ,  H02N13/00

CPC classification number: H01L21/6833 ,  C04B35/117 ,  C04B2235/3217 ,  C04B2235/3463 ,  C04B2235/3826 ,  C04B2235/5472 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/85 ,  C04B2235/87 ,  H02N13/00

Abstract: A composite sintered body, wherein the composite sintered body consists of ceramic composite sintered body, the ceramic composite sintered body comprises aluminum oxide as a main phase, and silicon carbide as a sub-phase, in which the composite sintered body has mullite in crystal grains of the aluminum oxide.

公开(公告)号：US11387132B2

公开(公告)日：2022-07-12

申请号：US16072750

申请日：2017-01-27

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Yoshiki Yoshioka ,  Nobuhiro Hidaka ,  Hironori Kugimoto

IPC: H01L21/683 ,  C04B35/117 ,  C04B35/626 ,  C04B35/645 ,  H01J37/32 ,  B25J19/00 ,  B25J15/00 ,  H01L21/687 ,  B25J9/00 ,  B25J11/00

Abstract: Provided is a composite sintered body for an electrostatic chuck, which is not easily broken even if it is exposed to high-power plasma. Further, provided are an electrostatic chuck device using such a composite sintered body for an electrostatic chuck and a method of manufacturing a composite sintered body for an electrostatic chuck. The composite sintered body for an electrostatic chuck is a composite sintered body including an insulating ceramic and silicon carbide, in which crystal grains of the silicon carbide are dispersed in at least one selected from the group consisting of a crystal grain boundary and a crystal grain of a main phase formed by sintering crystal grains of the insulating ceramic.