公开(公告)号：US20070179101A1

公开(公告)日：2007-08-02

申请号：US10590761

申请日：2005-02-25

申请人： Harukazu Kitagawa ,  Sumiko Iho ,  Takasumi Matsuki ,  Saburo Yamamoto

发明人： Harukazu Kitagawa ,  Sumiko Iho ,  Takasumi Matsuki ,  Saburo Yamamoto

IPC分类号： A61K48/00 ,  C07H21/04

CPC分类号： A61K45/06 ,  A61K39/39 ,  A61K2039/55561

摘要： An immunostimulatory oligonucleotide that is represented by the general formula 5′-Gm-GACGATCGTC-Gn-3′ or 5′-Gm-CACGATCGTG-Gn-3′ (in the formula, m and n are each independently an integer from 1 to 9 and m+n=10) and that comprises any of the following base sequences: GGACGATCGTCGGGGGGGGG,(SEQ ID NO: 1) GGGACGATCGTCGGGGGGGG,(SEQ ID NO: 2) GGGGACGATCGTCGGGGGGG,(SEQ ID NO: 3) GGGGGGGACGATCGTCGGGG,(SEQ ID NO: 4) GGGGGGGGACGATCGTCGGG,(SEQ ID NO: 5) GGGGGGGGGACGATCGTCGG,(SEQ ID NO: 6) GGGGGGGGGGACGATCGTCG,(SEQ ID NO: 7) and GGGGGGGGGCACGATCGTGG.(SEQ ID NO: 8)

公开(公告)号：US5208468A

公开(公告)日：1993-05-04

申请号：US727375

申请日：1991-07-05

申请人： Hidenori Kawanishi ,  Taiji Morimoto ,  Shinji Kaneiwa ,  Hiroshi Hayashi ,  Nobuyuki Miyauchi ,  Seiki Yano ,  Mitsuhiro Matsumoto ,  Kazuaki Sasaki ,  Masaki Kondo ,  Takehiro Shiomoto ,  Saburo Yamamoto

发明人： Hidenori Kawanishi ,  Taiji Morimoto ,  Shinji Kaneiwa ,  Hiroshi Hayashi ,  Nobuyuki Miyauchi ,  Seiki Yano ,  Mitsuhiro Matsumoto ,  Kazuaki Sasaki ,  Masaki Kondo ,  Takehiro Shiomoto ,  Saburo Yamamoto

IPC分类号： H01S5/02 ,  H01S5/028

CPC分类号： H01S5/0281 ,  H01S5/028 ,  H01S5/0201 ,  H01S5/0282 ,  H01S5/0283

摘要： A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.

摘要翻译： 公开了从小面发射激光的半导体激光器件。 半导体激光器件包括形成在半导体衬底上的多层结构，具有用于激光振荡的AlGaAs有源层的多层结构和形成在该刻面上的保护膜，其中，在该面和 保护膜。

公开(公告)号：US5087587A

公开(公告)日：1992-02-11

申请号：US12249

申请日：1987-02-09

申请人： Taiji Morimoto ,  Shigeki Maei ,  Hiroshi Hayashi ,  Saburo Yamamoto

发明人： Taiji Morimoto ,  Shigeki Maei ,  Hiroshi Hayashi ,  Saburo Yamamoto

IPC分类号： H01S5/16 ,  H01S5/223 ,  H01S5/24

CPC分类号： H01S5/16 ,  H01S5/2232 ,  H01S5/2234 ,  H01S5/24 ,  Y10S148/095

摘要： A window semiconductor laser device comprising a stripe-channeled substrate, an active layer for laser oscillation and a cladding layer disposed under the active layer, wherein the surface of the active layer is flat and the thickness of the portion of the active layer corresponding to the striped channel of said substrate in each of the window regions in the vicinity of the facets is thinner than that of the portion of the active corresponding to the striped channel of said substrate in the stimulated region positioned between the window regions.

摘要翻译： 一种窗口半导体激光器件，包括条形沟道衬底，用于激光振荡的有源层和设置在有源层下面的覆层，其中有源层的表面是平坦的，并且有源层的部分的厚度对应于 在小平面附近的每个窗口区域中的每个窗口区域中的所述衬底的条纹沟道比在位于窗口区域之间的被刺激区域中对应于所述衬底的条纹沟道的部分的活性部分的条纹沟道薄。

公开(公告)号：US4963021A

公开(公告)日：1990-10-16

申请号：US46333

申请日：1987-05-06

申请人： Arata Nakamura ,  Saburo Yamamoto

发明人： Arata Nakamura ,  Saburo Yamamoto

IPC分类号： H03K17/78 ,  G01S7/481 ,  G02B26/02 ,  G08B13/187 ,  H01H35/00

CPC分类号： G02B26/02 ,  G01S7/4813 ,  G02B19/0085 ,  G08B13/187

摘要： A photoelectric switching apparatus comprises: a light projecting device; a photo sensing device; an objective lens having a double structure comprising an outer peripheral portion and a central portion each of which acts as a lens; and a reflecting surface to deflect the lights on the optical axis of the central portion of the objective lens to the side. An elongated portion which extends on the optical axis of the central portion of the objective lens and has the reflecting surface at the end portion thereof is formed integrally with the objective lens.

摘要翻译： 一种光电开关装置，包括：投光装置; 感光装置; 具有双重结构的物镜，包括外周部分和各自用作透镜的中心部分; 以及将物镜的中心部分的光轴上的光偏转到侧面的反射面。 在物镜的中心部分的光轴上延伸并在其端部具有反射表面的细长部分与物镜一体形成。

公开(公告)号：US4945525A

公开(公告)日：1990-07-31

申请号：US239753

申请日：1988-09-02

申请人： Osamu Yamamoto ,  Toshihiko Yoshida ,  Saburo Yamamoto

发明人： Osamu Yamamoto ,  Toshihiko Yoshida ,  Saburo Yamamoto

IPC分类号： G11B7/12 ,  G11B7/135

CPC分类号： G11B7/1384 ,  G11B7/124

摘要： An optical information processing apparatus including a substrate of a transparent material, first and second optical waveguides formed on opposite faces of said transparent substrate, a light introducing device for introducing reflected light from an information writing medium into the first and second optical waveguides, and a detecting device for detecting reproduction signal, tracking error signal and focusing error signal based on the reflected light introduced into the first and second optical waveguides.

公开(公告)号：US4769822A

公开(公告)日：1988-09-06

申请号：US910530

申请日：1986-09-23

申请人： Takahiro Suyama ,  Kohsei Takahashi ,  Saburo Yamamoto ,  Toshiro Hayakawa ,  Masafumi Kondo

发明人： Takahiro Suyama ,  Kohsei Takahashi ,  Saburo Yamamoto ,  Toshiro Hayakawa ,  Masafumi Kondo

IPC分类号： H01S5/00 ,  H01S5/12 ,  H01S5/20 ,  H01S5/223 ,  H01S5/34 ,  H01S3/19

CPC分类号： H01S5/12 ,  H01S5/1237 ,  H01S5/2059 ,  H01S5/2231 ,  H01S5/3428

摘要： A semiconductor laser device comprising a laser oscillation-operating area containing a first cladding layer, an active layer, an optical guiding layer and a second cladding layer in that order, wherein a striped impurity-diffusion region is formed into said second cladding layer from one facet to the other facet and a plurality of narrow strips of GaAs with a spaced pitch are formed in parallel with both facets in the region, except for the region corresponding to said striped diffusion region, which is positioned at the interface between the optical guiding layer and the second cladding layer.

摘要翻译： 一种半导体激光器件，包括依次包含第一包层，有源层，光导层和第二包层的激光振荡操作区域，其中从一个第一包层形成带状杂质扩散区域 除了对应于所述条纹扩散区域的区域之外，与该区域中的两个小平面平行地形成具有间隔的间距的多个窄带的GaAs的另一个面和多个窄带的GaAs，所述区域位于光引导层 和第二覆层。

公开(公告)号：US4737962A

公开(公告)日：1988-04-12

申请号：US734091

申请日：1985-05-15

申请人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Nobuyuki Miyauchi ,  Shigeki Maei ,  Taiji Morimoto

发明人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Nobuyuki Miyauchi ,  Shigeki Maei ,  Taiji Morimoto

IPC分类号： H01S3/082 ,  H01S5/028 ,  H01S5/062 ,  H01S5/10 ,  H01S5/24 ,  H01S5/40 ,  H01S3/19 ,  H01S3/10

CPC分类号： H01S5/24 ,  H01S3/082 ,  H01S5/028 ,  H01S5/1032 ,  H01S5/0622 ,  H01S5/10 ,  H01S5/4056

摘要： A compound resonator type semiconductor laser device comprising a multiple-layered crystal structure having a first laser operation area which contains a resonator for laser oscillation and a second laser operation area which contains a resonator a facet of which is shared with that of the resonator in the first laser operation area; and an electric current feeder for injecting a current into said multiple-layered crystal structure, and wherein said facet of the resonator in the first laser operation area, which is shared with the facet of the resonator in the second laser operation area, is covered with a protective film to attain a high reflectivity therein, the other facet of the resonator in the first laser operation area is covered with a protective film to attain a low reflectivity therein, and the other facet of the resonator in the second laser operation area is covered with a protective film to attain a high reflectivity therein.

摘要翻译： 一种复合谐振器型半导体激光器件，包括具有第一激光器操作区域的多层晶体结构，所述第一激光器操作区域包含用于激光振荡的谐振器，以及第二激光器操作区域，所述第二激光器操作区域包含与所述谐振器的谐振器共面的谐振器 第一激光手术区; 以及用于将电流注入到所述多层晶体结构中的电流馈送器，并且其中在所述第二激光操作区域中与所述谐振器的面共享的所述第一激光器操作区域中的谐振器的所述小面被覆盖 保护膜以在其中获得高反射率，第一激光操作区域中的谐振器的另一个面被保护膜覆盖以在其中获得低反射率，并且覆盖第二激光操作区域中的谐振器的另一个面 具有保护膜以在其中获得高反射率。

公开(公告)号：US4737959A

公开(公告)日：1988-04-12

申请号：US772789

申请日：1985-09-05

申请人： Takahiro Suyama ,  Toshiro Hayakawa ,  Kohsei Takahashi ,  Saburo Yamamoto

发明人： Takahiro Suyama ,  Toshiro Hayakawa ,  Kohsei Takahashi ,  Saburo Yamamoto

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S5/40 ,  H01S3/19

CPC分类号： H01S5/4031 ,  H01S5/223

摘要： A semiconductor laser array device comprising a substrate having a plurality of adjacent striped channels on its surface, and a plurality of laser operation areas each of which contains a cladding layer, an active layer and another cladding layer which have been successively formed on the surface of said substrate by molecular beam epitaxy or metal organic chemical vapor deposition in such a manner that the surface of each of these layers becomes parallel to the surface of said substrate.

摘要翻译： 一种半导体激光器阵列器件，包括在其表面上具有多个相邻条纹沟道的衬底，以及多个激光器操作区域，每个激光器操作区域包含已经依次形成在表面上的覆层，有源层和另一覆层 所述衬底通过分子束外延或金属有机化学气相沉积，使得这些层中的每一层的表面平行于所述衬底的表面。

公开(公告)号：US4720834A

公开(公告)日：1988-01-19

申请号：US807867

申请日：1985-12-11

申请人： Osamu Yamamoto ,  Hiroshi Hayashi ,  Taiji Morimoto ,  Saburo Yamamoto

发明人： Osamu Yamamoto ,  Hiroshi Hayashi ,  Taiji Morimoto ,  Saburo Yamamoto

IPC分类号： H01S5/00 ,  H01S3/082 ,  H01S5/042 ,  H01S5/10 ,  H01S5/22 ,  H01S3/19

CPC分类号： H01S3/082 ,  H01S5/10 ,  H01S5/1021 ,  H01S5/22

摘要： An internal-reflection-interference semiconductor laser device comprising a first laser operation area ranging from one facet to the internal reflecting section and a second laser operation area ranging from the other facet to the internal reflecting section, wherein when the internal-cavity length l.sub.1 of the first laser operation area is shorter than the internal-cavity length l.sub.2 of the second laser operation area, the reflectivity R.sub.1 at the facet on the side of the first laser operation area is smaller than the reflectivity R.sub.2 at the facet on the side of the second laser operation area.

摘要翻译： 一种内反射干涉半导体激光器件，包括从一个面到内部反射部的范围的第一激光操作区域和从另一个面到内部反射部的范围的第二激光操作区域，其中当内部反射干涉半导体激光器的内腔长度l1 第一激光操作区域比第二激光器操作区域的内腔长度l2短，第一激光操作区域侧面上的反射率R1小于第一激光器操作区域侧面上的反射率R2 第二激光操作区域。

公开(公告)号：US4592062A

公开(公告)日：1986-05-27

申请号：US498041

申请日：1983-05-25

申请人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Seiki Yano

发明人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Seiki Yano

IPC分类号： H01L21/208 ,  H01S5/00 ,  H01S5/24 ,  H01S3/19

CPC分类号： H01S5/24

摘要： A V-channeled substrate inner stripe (VSIS) laser is manufactured on a GaAs substrate. The VSIS laser includes p-Ga.sub.0.7 Al.sub.0.3 As active layer, and an n-Ga.sub.0.85 Al.sub.0.15 As cap layer. The GaAs substrate is removed from the final device. The n-Ga.sub.0.85 Al.sub.0.15 As cap layer functions to support the final device, and to minimize a stress applied to the p-Ga.sub.0.7 Al.sub.0.3 As active layer.

摘要翻译： 在GaAs衬底上制造V沟道衬底内条（VSIS）激光器。 VSIS激光器包括p-Ga0.7Al0.3As有源层和n-Ga0.85Al0.15As覆盖层。 从最终的器件去除GaAs衬底。 n-Ga0.85Al0.15As覆盖层用于支持最终器件，并且最小化施加到p-Ga0.7Al0.3As有源层的应力。