利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

72 条记录 (耗时 0.018 秒)

    Optical information processing apparatus
    1.
    发明授权
    Optical information processing apparatus 失效
    光信息处理装置

    公开(公告)号：US4945525A

    公开(公告)日：1990-07-31

    申请号：US239753

    申请日：1988-09-02

    申请人： Osamu Yamamoto ,  Toshihiko Yoshida ,  Saburo Yamamoto

    发明人： Osamu Yamamoto ,  Toshihiko Yoshida ,  Saburo Yamamoto

    IPC分类号： G11B7/12 ,  G11B7/135

    CPC分类号： G11B7/1384 ,  G11B7/124

    摘要： An optical information processing apparatus including a substrate of a transparent material, first and second optical waveguides formed on opposite faces of said transparent substrate, a light introducing device for introducing reflected light from an information writing medium into the first and second optical waveguides, and a detecting device for detecting reproduction signal, tracking error signal and focusing error signal based on the reflected light introduced into the first and second optical waveguides.

    Optical information processing apparatus
    3.
    发明授权
    Optical information processing apparatus 失效
    光信息处理设备

    公开(公告)号：US5119355A

    公开(公告)日：1992-06-02

    申请号：US505026

    申请日：1990-04-05

    申请人： Osamu Yamamoto ,  Toshihiko Yoshida ,  Saburo Yamamoto

    发明人： Osamu Yamamoto ,  Toshihiko Yoshida ,  Saburo Yamamoto

    IPC分类号： G11B7/12 ,  G11B7/135

    CPC分类号： G11B7/1384 ,  G11B7/124

    摘要： An optical information processing apparatus which includes a substrate of a transparent material, first and second optical waveguides formed on opposite faces of said transparent substrate, a light introducing device for introducing reflected light from an information writing medium into the first and second optical waveguides, and a detecting device for detecting a reproduction signal, tracking error signal and focusing error signal based on the reflected light introduced into the first and second optical waveguides.

    Internal-reflection-interference semiconductor laser device
    4.
    发明授权
    Internal-reflection-interference semiconductor laser device 失效
    内反射干涉半导体激光器件

    公开(公告)号：US4720834A

    公开(公告)日：1988-01-19

    申请号：US807867

    申请日：1985-12-11

    申请人： Osamu Yamamoto ,  Hiroshi Hayashi ,  Taiji Morimoto ,  Saburo Yamamoto

    发明人： Osamu Yamamoto ,  Hiroshi Hayashi ,  Taiji Morimoto ,  Saburo Yamamoto

    IPC分类号： H01S5/00 ,  H01S3/082 ,  H01S5/042 ,  H01S5/10 ,  H01S5/22 ,  H01S3/19

    CPC分类号： H01S3/082 ,  H01S5/10 ,  H01S5/1021 ,  H01S5/22

    摘要： An internal-reflection-interference semiconductor laser device comprising a first laser operation area ranging from one facet to the internal reflecting section and a second laser operation area ranging from the other facet to the internal reflecting section, wherein when the internal-cavity length l.sub.1 of the first laser operation area is shorter than the internal-cavity length l.sub.2 of the second laser operation area, the reflectivity R.sub.1 at the facet on the side of the first laser operation area is smaller than the reflectivity R.sub.2 at the facet on the side of the second laser operation area.

    摘要翻译： 一种内反射干涉半导体激光器件，包括从一个面到内部反射部的范围的第一激光操作区域和从另一个面到内部反射部的范围的第二激光操作区域，其中当内部反射干涉半导体激光器的内腔长度l1 第一激光操作区域比第二激光器操作区域的内腔长度l2短，第一激光操作区域侧面上的反射率R1小于第一激光器操作区域侧面上的反射率R2 第二激光操作区域。

    Interferometric semiconductor laser device
    7.
    发明授权
    Interferometric semiconductor laser device 失效
    干涉半导体激光器件

    公开(公告)号：US4777637A

    公开(公告)日：1988-10-11

    申请号：US804575

    申请日：1985-12-04

    申请人： Hiroshi Hayashi ,  Osamu Yamamoto ,  Saburo Yamamoto

    发明人： Hiroshi Hayashi ,  Osamu Yamamoto ,  Saburo Yamamoto

    IPC分类号： H01S5/00 ,  H01S5/10 ,  H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/10 ,  H01S5/2232 ,  H01S5/2234

    摘要： An interferometric semiconductor laser device having a built-in effective refraction index difference, based on the absorption of light by a substrate, between the portion of the active layer corresponding to the inside area of a striped channel formed on the surface of said substrate and the portion of the active layer corresponding to the outside area of said striped channel, wherein regions, which are positioned between the active layer and the substrate in the outside area of said channel along a waveguide formed in the active layer corresponding to said channel, are different from each other in the distance between the active layer and the substrate, thereby creating a difference in the effective refraction index between the portions of the active layer corresponding to said regions.

    摘要翻译： 一种干涉式半导体激光装置，其具有基于衬底的光的吸收而在所述有源层的与形成在所述衬底的表面上的条纹沟道的内部区域相对应的部分之间的有效折射率差和 有源层的对应于所述条纹沟道的外部区域的部分，其中位于所述沟道的外部区域中的有源层和衬底之间的区域沿着形成在与所述沟道相对应的有源层中的波导形成不同 在有源层和衬底之间的距离处彼此相对，从而在对应于所述区域的有源层的部分之间产生有效折射率的差异。

    Internal reflection interferometric semiconductor laser apparatus
    8.
    发明授权
    Internal reflection interferometric semiconductor laser apparatus 失效
    内反射干涉式半导体激光装置

    公开(公告)号：US4773077A

    公开(公告)日：1988-09-20

    申请号：US874601

    申请日：1986-06-16

    申请人： Osamu Yamamoto ,  Hiroshi Hayashi ,  Saburo Yamamoto

    发明人： Osamu Yamamoto ,  Hiroshi Hayashi ,  Saburo Yamamoto

    IPC分类号： H01S5/00 ,  H01S5/068 ,  H01S5/14 ,  H01S3/19

    CPC分类号： H01S5/14

    摘要： A semiconductor laser apparatus comprising: a semiconductor laser chip with a first light-emitting facet and a second light-emitting facet containing an interference effect-creating means therein for creating an interference effect within the resonator(s) thereof, a laser light-reflecting means for returning a part of the laser light emitted from the first light-emitting facet of said semiconductor laser chip to the first light-emitting facet, and a mounting base on which said semiconductor laser chip and said laser light-reflecting means are fixed in a parallel manner.

    摘要翻译： 一种半导体激光装置，包括：具有第一发光面的半导体激光器芯片和包含干涉效应产生装置的第二发光小面，用于在其谐振器内产生干涉效应，激光反射 用于将从所述半导体激光器芯片的第一发光小面发射的一部分激光的一部分返回到第一发光小面的装置，以及将所述半导体激光芯片和所述激光反射装置固定在其上的安装基座 平行的方式。

    Semiconductor light emitting device with current confining layer
    9.
    发明授权
    Semiconductor light emitting device with current confining layer 失效
    具有电流限制层的半导体发光器件

    公开(公告)号：US5404031A

    公开(公告)日：1995-04-04

    申请号：US270115

    申请日：1994-07-01

    申请人： Kazuaki Sasaki ,  Hiroshi Nakatsu ,  Osamu Yamamoto ,  Masanori Watanabe ,  Saburo Yamamoto

    发明人： Kazuaki Sasaki ,  Hiroshi Nakatsu ,  Osamu Yamamoto ,  Masanori Watanabe ,  Saburo Yamamoto

    IPC分类号： H01L33/00 ,  H01L33/10 ,  H01L33/14 ,  H01L33/24 ,  H01L33/28 ,  H01L33/30 ,  H01L33/38

    CPC分类号： H01L33/38 ,  H01L33/0062 ,  H01L33/10 ,  H01L33/145 ,  H01L33/24 ,  H01L33/405

    摘要： A semiconductor light emitting device which allows part of an active layer to generate light by supplying current to the part of the active layer is disclosed. The semiconductor light emitting device includes: a semiconductor substrate having upper and lower surfaces, the upper surface having a stepped portion, the stepped portion dividing the upper surface into at least a first area and a second area; a current confining layer, formed on the upper surface of the substrate, the current confining layer being discontinuous at the stepped portion, the current flowing through an area between the first area and the second area of the substrate; a multilayer structure formed on the current confining layer, the multilayer structure including the active layer; a first electrode which covers only part of an upper surface of the multilayer structure; and a second electrode formed over the lower surface of the substrate. In the semiconductor light emitting device, the light generated from part of the active layer is extracted to the outside through a portion of the upper surface of the multilayer structure which is not covered with the first electrode.

    摘要翻译： 公开了一种半导体发光器件，其通过向有源层的一部分提供电流来允许有源层的一部分产生光。 半导体发光器件包括：具有上表面和下表面的半导体衬底，上表面具有阶梯部分，阶梯部分将上表面分成至少第一区域和第二区域; 形成在所述基板的上表面上的电流限制层，所述电流限制层在所述阶梯部分处是不连续的，所述电流流过所述第一区域和所述基板的所述第二区域之间的区域; 形成在电流限制层上的多层结构，所述多层结构包括有源层; 仅覆盖所述多层结构的上表面的一部分的第一电极; 以及形成在所述基板的下表面上的第二电极。 在半导体发光器件中，从有源层的一部分产生的光通过未被第一电极覆盖的多层结构的上表面的一部分提取到外部。