公开(公告)号：US06868893B2

公开(公告)日：2005-03-22

申请号：US10305196

申请日：2002-11-27

申请人： Sachio Shimohata ,  Yuichi Ohtani ,  Tatsuya Ohira ,  Ikuo Okada

发明人： Sachio Shimohata ,  Yuichi Ohtani ,  Tatsuya Ohira ,  Ikuo Okada

IPC分类号： F02C7/00 ,  B22D27/04

CPC分类号： B22D27/045

摘要： Provided is a directional solidification casting apparatus capable of heightening a cooling effect when molten material poured in a mold is directionally solidified. A mold (20) disposed around a predetermined area is drawn out from a heating chamber (10) heated above a melting temperature of metals for producing a casting (31), and molten metals (32) held in a cavity (21) of the mold (20) are directionally solidified. The directional solidification casting apparatus (100) comprises a driving rod (42) by which the mold (20) is drawn out from the heating chamber (10), a gas nozzle (52b) through which a cooling gas is jetted from inside a predetermined area where the mold (20) is disposed so as to rapidly cool the mold (20), and a gas nozzle (52a) through which a cooling gas is jetted from outside the predetermined area where the mold (20) is disposed so as to rapidly cool the mold (20). A baffle (15) that does not move even when the driving rod (42) moves up and down is additionally provided. The baffle (15) blocks radiant heat emitted from the heating chamber (10).

摘要翻译： 本发明提供一种定向凝固铸造装置，其能够在浇铸在模具中的熔融材料定向凝固时提高冷却效果。 设置在预定区域周围的模具（20）从用于制造铸件（31）的金属的熔化温度以上的加热室（10）被拉出，并且熔融金属（32）保持在 模具（20）定向凝固。 定向凝固铸造装置（100）包括：驱动杆（42），通过该驱动杆将模具（20）从加热室（10）中抽出;气体喷嘴（52b），冷却气体从预定 模具（20）设置为快速冷却模具（20）的区域，以及气体喷嘴（52a），冷却气体从设置有模具（20）的预定区域的外侧喷出，从而 快速冷却模具（20）。 附加地设置即使当驱动杆（42）上下移动时也不移动的挡板（15）。 挡板（15）阻挡从加热室（10）发射的辐射热。

公开(公告)号：US06347284B1

公开(公告)日：2002-02-12

申请号：US09126739

申请日：1998-07-31

申请人： Tatsuya Ohira ,  Yukihiko Inoue

发明人： Tatsuya Ohira ,  Yukihiko Inoue

IPC分类号： G01L100

CPC分类号： G01N19/04 ,  G01N2203/0214

摘要： A computer assisted system predicting adhesion energy at an interface between dissimilar materials, and an associated adhesiveness includes units for inputting given compositions and crystal structure of the dissimilar materials; like-atom and two unlike-atom interatomic interaction energy parameters on the dissimilar materials; and material interface atomic structure model information into a computer. The computer calculates a material interface total energy relative to a distance between surfaces of the dissimilar materials on the basis of the sum of the two like-atom and two unlike-atom interatomic interaction energies and evaluates the adhesion energy from the distribution of the calculated material interface total energy.

摘要翻译： 计算机辅助系统预测不同材料之间的界面处的粘附能，以及相关联的粘合性包括用于输入不同材料的给定组成和晶体结构的单元; 异原子和两个不同原子的原子间相互作用能量参数在异种材料上; 并将材料界面的原子结构模型信息转换成计算机。 计算机根据两个相似原子和两个不同原子的原子间原子相互作用能量的总和，计算相对于异种材料表面之间的距离的材料界面总能量，并根据计算材料的分布评估粘附能 界面总能量。

公开(公告)号：US20120080805A1

公开(公告)日：2012-04-05

申请号：US13200654

申请日：2011-09-28

申请人： Chikako Ohto ,  Tatsuya Usami ,  Shuji Nagano ,  Hideharu Shimizu ,  Tatsuya Ohira ,  Takeshi Kada

发明人： Chikako Ohto ,  Tatsuya Usami ,  Shuji Nagano ,  Hideharu Shimizu ,  Tatsuya Ohira ,  Takeshi Kada

IPC分类号： H01L23/48 ,  H01L21/28

CPC分类号： H01L21/76834 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/76835

摘要： A semiconductor device according to the invention includes a first Cu interconnect and a first barrier insulating film. a The first barrier insulating film is provided on the first Cu interconnect, and prevents Cu from being diffused from the first Cu interconnect. In addition, the semiconductor device includes a second Cu interconnect and a second barrier insulating film on the first barrier insulating film. The second barrier insulating film is provided on a first Cu interconnect, and prevents Cu from being diffused from the second Cu interconnect. The first and second barrier insulating films are made of a silicon-based insulating film having a branched alkyl group and a carbon-carbon double bond.

摘要翻译： 根据本发明的半导体器件包括第一Cu互连和第一阻挡绝缘膜。 a第一阻挡绝缘膜设置在第一Cu互连上，并且防止Cu从第一Cu互连扩散。 此外，半导体器件在第一阻挡绝缘膜上包括第二Cu互连和第二阻挡绝缘膜。 第二阻挡绝缘膜设置在第一Cu互连上，并且防止Cu从第二Cu互连扩散。 第一和第二阻挡绝缘膜由具有支链烷基和碳 - 碳双键的硅基绝缘膜制成。

公开(公告)号：US20090191338A1

公开(公告)日：2009-07-30

申请号：US12226217

申请日：2007-04-18

申请人： Kenji Matsumoto ,  Hiroshi Sato ,  Tatsuya Ohira ,  Hideaki Machida ,  Masato Ishikawa

发明人： Kenji Matsumoto ,  Hiroshi Sato ,  Tatsuya Ohira ,  Hideaki Machida ,  Masato Ishikawa

IPC分类号： C23C16/06 ,  C23C16/54

CPC分类号： C23C16/18 ,  C23C16/4482 ,  H01L21/28556 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A film-deposition apparatus and a film-deposition method for forming a manganese film on a surface of an object to be processed by a CVD method are provided. The film-deposition apparatus for forming a manganese film on a surface of an object to be processed by a CVD method (Chemical Vapor Deposition method), the film-deposition apparatus comprises: a process vessel capable of being evacuated; a table on which the object to be processed can be placed, the table being disposed in the process vessel; and a source-gas supply part connected to the process vessel, the source-gas supply part being configured to supply, into the process vessel, a source gas including an organic metal material containing manganese or a metal complex material containing manganese. The film-deposition method for forming a manganese film on a surface of an object to be processed by a CVD method (Chemical Vapor Deposition method), the film-deposition method comprises the steps of: placing an object to be processed in an inside of a process vessel capable of being evacuated; and forming a manganese film on a surface of the object to be processed in the process vessel by the CVD method with the use of a source gas including an organic metal material containing manganese or a metal complex material containing manganese.

摘要翻译： 提供了一种通过CVD方法在待处理物体的表面上形成锰膜的成膜装置和膜沉积方法。 用于通过CVD法（化学气相沉积法）在待处理物体的表面上形成锰膜的成膜装置，所述成膜装置包括：能够被抽真空的处理容器; 可以放置待处理对象的工作台，该工作台设置在处理容器中; 以及连接到处理容器的源气供给部，所述源气供给部构成为向所述处理容器供给包含含有锰的有机金属材料或含有锰的金属络合物的源气体。 通过CVD法（化学气相沉积法）在待处理物体的表面上形成锰膜的成膜方法，成膜方法包括以下步骤：将待处理物体放置在 能够被抽真空的处理容器; 以及使用包含含有锰的有机金属材料或含有锰的金属络合物的源气体，通过CVD法在处理容器中的被处理物的表面上形成锰膜。