摘要:
A method and apparatus are disclosed for measuring atmospheric pressure in conjunction with an air-fuel ratio sensor of the type comprising a concentration cell with atmospheric air and exhaust electrodes on opposite sides of a solid-state electrolyte having oxygen ion conductivity. During an atmospheric pressure measuring cycle, oxygen ions are pumped from the atmospheric air electrode to the exhaust electrode, in a quantity which is either predetermined at a fixed value, or is sufficient to bring the cell to an equilibrium state. Atmospheric pressure is then calculated from measured emf of the cell, using an experimentally derived functional relationship. In a second embodiment, ions are pumped until a predetermined change of the concentration cell emf is achieved, and atmospheric pressure is determined based on the amount of time required to achieve such change. The atmospheric pressure measuring mode is operated on a time shared basis with the air-fuel ration detection mode.
摘要:
An air fuel ratio detecting arrangement using a diffusion suppressing type air fuel ratio sensor applicable to an air fuel ratio control unit for an internal combustion engine incorporating an atmospheric air pressure correction circuit in a signal processing and outputting device for correcting an output voltage signal processed therein based on a change in atmospheric air pressure which is detected when a predetermined operating condition of an internal combustion engine is satisfied. A secular change correction circuit included in the signal processing and outputting device detects a change in electromotive force of a concentration cell portion of the air fuel ratio sensor when a predetermined rich air fuel ratio is reached and corrects a reference voltage for the air fuel ratio sensor based on the detected change in electromotive force of the concentration cell portion in addition to an air calibration circuit.
摘要:
The present invention aims to provide a pattern dimension measurement method for accurately measuring an amount of shrinkage of a pattern that shrinks and an original dimension value before the shrinkage and a charged particle beam apparatus.In order to attain the above-mentioned object, there are proposed a pattern dimension measurement method and a charged particle beam apparatus that are characterized by: forming a thin film on a sample including the pattern after carrying out beam scanning onto a first portion of the pattern; acquiring a first measurement value by scanning a beam onto a region corresponding to the first portion on which the thin film is formed; acquiring a second measurement value by scanning a beam onto a second portion that has identical dimensions as those of the first portion on design data; and finding the amount of shrinkage of the pattern based on subtraction processing of subtracting the first measurement value from the second measurement value.
摘要:
The present invention aims at proposing a library creation method and a pattern shape estimation method in which it is possible, when estimating a shape based on comparison between an actual waveform and a library, to appropriately estimate the shape.As an illustrative embodiment to achieve the object, there are proposed a method of selecting a pattern by referring to a library, a method of creating a library by use of pattern cross-sectional shapes calculated through an exposure process simulation in advance, and a method for selecting a pattern shape stored in the library.
摘要:
The present invention aims to provide a pattern dimension measurement method for accurately measuring an amount of shrinkage of a pattern that shrinks and an original dimension value before the shrinkage and a charged particle beam apparatus.In order to attain the above-mentioned object, there are proposed a pattern dimension measurement method and a charged particle beam apparatus that are characterized by: forming a thin film on a sample including the pattern after carrying out beam scanning onto a first portion of the pattern; acquiring a first measurement value by scanning a beam onto a region corresponding to the first portion on which the thin film is formed; acquiring a second measurement value by scanning a beam onto a second portion that has identical dimensions as those of the first portion on design data; and finding the amount of shrinkage of the pattern based on subtraction processing of subtracting the first measurement value from the second measurement value.
摘要:
An object of the present invention is to provide an image processing apparatus and a computer program which detects a defect such as a scum at high speed and with high precision. In order to accomplish the above-described object, the present invention proposes an image processing apparatus and a computer program which acquires image data, and detects edge branch points from this image data. Here, at each of the edge branch points, an edge associated therewith branches off in at least three or more directions. According to this configuration, it becomes possible to detect a defect such as a scum without utilizing the reference-pattern image. As a consequence, it becomes possible to detect the scum at high speed and with high precision.
摘要:
A transmitter suppresses peak power occurring in a transmission signal. The transmitter generates peak suppression signals for suppressing the peak power in the transmission signal respectively, synthesizes the peak suppression signals generated, and subtracts a signal as a synthesis result from the transmission signal.
摘要:
A transmitter suppresses a peak level of a multi-carrier signal produced by synthesizing a plurality of carrier signals. Specifically, a peak level suppression signal for a multi-carrier signal is generated. The generated peak level suppression signal is adjusted in accordance with the levels of respective carriers constituting the multi-carrier signal. And, the adjusted peak level suppression signal for each carrier is subtracted from an input signal, thereby generating a multi-carrier signal whose peak level is suppressed.
摘要:
Systems and methods using imaged device patterns to measure overlay between different layers in a semiconductor manufacturing process, such as a double-patterning process. Images of pattern features are acquired by scanning electron microscopy. The position of a patterning layer is determined using positions of pattern features for the patterning layer in the images. A relative position of each patterning layer with respect to other pattern features or patterning layers is determined in vector form based on the determined pattern positions. Overlay error is determined based on a comparison of the relative position with reference values from design or simulation. Overlay can be measured with high precision and accuracy by utilizing pattern symmetry.
摘要:
A semitransparent phase shifting mask has, in the periphery of a pattern element area, a light shielding portion which is formed by a semitransparent phase shifting portion and a transparent portion with the optimal size combination. A pattern is formed employing the semitransparent phase shifting mask.