摘要:
The present invention aims to provide a pattern dimension measurement method for accurately measuring an amount of shrinkage of a pattern that shrinks and an original dimension value before the shrinkage and a charged particle beam apparatus.In order to attain the above-mentioned object, there are proposed a pattern dimension measurement method and a charged particle beam apparatus that are characterized by: forming a thin film on a sample including the pattern after carrying out beam scanning onto a first portion of the pattern; acquiring a first measurement value by scanning a beam onto a region corresponding to the first portion on which the thin film is formed; acquiring a second measurement value by scanning a beam onto a second portion that has identical dimensions as those of the first portion on design data; and finding the amount of shrinkage of the pattern based on subtraction processing of subtracting the first measurement value from the second measurement value.
摘要:
The present invention aims to provide a pattern dimension measurement method for accurately measuring an amount of shrinkage of a pattern that shrinks and an original dimension value before the shrinkage and a charged particle beam apparatus.In order to attain the above-mentioned object, there are proposed a pattern dimension measurement method and a charged particle beam apparatus that are characterized by: forming a thin film on a sample including the pattern after carrying out beam scanning onto a first portion of the pattern; acquiring a first measurement value by scanning a beam onto a region corresponding to the first portion on which the thin film is formed; acquiring a second measurement value by scanning a beam onto a second portion that has identical dimensions as those of the first portion on design data; and finding the amount of shrinkage of the pattern based on subtraction processing of subtracting the first measurement value from the second measurement value.
摘要:
In the present invention, at the time of measuring, using a CD-SEM, a length of a resist that shrinks when irradiated with an electron beam, in order to highly accurately estimate a shape and dimensions of the resist before shrink, a shrink database with respect to various patterns is previously prepared, said shrink database containing cross-sectional shape data obtained prior to electron beam irradiation, a cross-sectional shape data group and a CD-SEM image data group, which are obtained under various electron beam irradiation conditions, and models based on such data and data groups, and a CD-SEM image of a resist pattern to be measured is obtained (S102), then, the CD-SEM image and data in the shrink database are compared with each other (S103), and the shape and dimensions of the pattern before the shrink are estimated and outputted (S104).
摘要:
A system for controlling a tool-to-tool disparity between a plurality of scanning electron microscopes includes a measuring unit for measuring a tool-to-tool disparity between plural scanning electron microscopes based on information extracted from secondary electron images which are captured by imaging a reference pattern, a tool state monitoring unit for monitoring tool states of each of the plural scanning electron microscopes, and an output unit for displaying on a screen a relationship between the tool-to-tool disparity between the plural scanning electron microscopes and tool states of each of the plural scanning electron microscopes monitored by the tool state monitoring unit. The tool state monitoring unit monitors the tool states of each of the plural scanning electron microscopes while imaging the reference pattern by using each of the plural scanning electron microscopes.
摘要:
An object of the present invention is to provide an image processing apparatus that quickly and precisely measures or evaluates a distortion in a field of view and a charged particle beam apparatus. To attain the object, an image processing apparatus or the like is proposed which acquires a first image of a first area of an imaging target and a second image of a second area that is located at a different position than the first area and partially overlaps with the first area and determines the distance between a measurement point in the second image and a second part of the second image that corresponds to a particular area for a plurality of sites in the overlapping area of the first image and the second image.
摘要:
Disclosed herewith is a length measurement system, which obtains a value closer to its true one when figuring out the size and edge roughness of a pattern from a noise-included pattern image. Among plural band-like regions representing a portion around an edge in an image respectively, the system calculates the dependency of the edge point position on the image processing parameter at each of a narrow width band-like portion and a wide width band-like portion to calculate an image processing condition that calculates each measured value closer to its true value or estimates the true value itself.
摘要:
The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses.
摘要:
A system for controlling a tool-to-tool disparity between a plurality of scanning electron microscopes includes a measuring unit for measuring a tool-to-tool disparity between plural scanning electron microscopes based on information extracted from secondary electron images which are captured by imaging a reference pattern, a tool state monitoring unit for monitoring tool states of each of the plural scanning electron microscopes, and an output unit for displaying on a screen a relationship between the tool-to-tool disparity between the plural scanning electron microscopes and tool states of each of the plural scanning electron microscopes monitored by the tool state monitoring unit. The tool state monitoring unit monitors the tool states of each of the plural scanning electron microscopes while imaging the reference pattern by using each of the plural scanning electron microscopes.
摘要:
Equipment extracts components of spatial frequency that need to be evaluated in manufacturing a device or in analyzing a material or process out of edge roughness on fine line patterns and displays them as indexes. The equipment acquires data of edge roughness over a sufficiently long area, integrates components corresponding to a spatial frequency region being set on a power spectrum by the operator, and displays them on a length measuring SEM. Alternatively, the equipment divides the edge roughness data of the sufficiently long area, computes long-period roughness and short-period roughness that correspond to an arbitrary inspection area by performing statistical processing and fitting based on theoretical calculation, and displays them on the length measuring SEM.
摘要:
The present invention suppresses decreases in the volumes of the patterns which have been formed on the surfaces of semiconductor samples or of the like, or performs accurate length measurements, irrespective of such decreases. In an electrically charged particle ray apparatus by which the line widths and other length data of the patterns formed on samples are to be measured by scanning the surface of each sample with electrically charged particle rays and detecting the secondary electrons released from the sample, the scanning line interval of said electrically charged particle rays is set so as not to exceed the irradiation density dictated by the physical characteristics of the sample. Or measured length data is calculated from prestored approximation functions.