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    METHOD FOR MANUFACTURING AN ENERGY STORAGE DEVICE AND STRUCTURE THEREFOR
    1.
    发明申请
    METHOD FOR MANUFACTURING AN ENERGY STORAGE DEVICE AND STRUCTURE THEREFOR 有权
    制造能源储存装置及其结构的方法

    公开(公告)号：US20090267187A1

    公开(公告)日：2009-10-29

    申请号：US12108361

    申请日：2008-04-23

    申请人： Sallie Hose ,  Derryl Allman ,  Peter A. Burke ,  Ponce Saopraseuth

    发明人： Sallie Hose ,  Derryl Allman ,  Peter A. Burke ,  Ponce Saopraseuth

    IPC分类号： H01L29/92 ,  H01L21/02

    CPC分类号： H01L28/75

    摘要： An energy storage device such as a metal-insulator-metal capacitor and a method for manufacturing the energy storage device. The metal-insulator-metal capacitor includes an insulating material positioned between a bottom electrode or bottom plate and a top electrode or top plate. The surface area of the bottom electrode is greater than the surface area of the insulating material and the surface area of the insulating material is greater than the surface area of the top electrode. The top electrode and the insulating layer have edges that are laterally within and spaced apart from edges of the bottom electrode. A protective layer covers the top electrode, the edges of the top electrode, and the portions of the insulating layer that are uncovered by the top electrode. The protective layer serves as an etch mask during the formation of the bottom electrode.

    摘要翻译： 诸如金属 - 绝缘体 - 金属电容器的能量存储装置和用于制造储能装置的方法。 金属 - 绝缘体 - 金属电容器包括位于底部电极或底板与顶部电极或顶板之间的绝缘材料。 底部电极的表面积大于绝缘材料的表面积，并且绝缘材料的表面积大于顶部电极的表面积。 顶部电极和绝缘层具有横向在底部电极的边缘内并与其间隔开的边缘。 保护层覆盖顶部电极，顶部电极的边缘和绝缘层的未被顶部电极覆盖的部分。 在形成底部电极期间，保护层用作蚀刻掩模。

    Method for manufacturing an energy storage device and structure therefor
    2.
    发明授权
    Method for manufacturing an energy storage device and structure therefor 有权
    储能装置的制造方法及其结构

    公开(公告)号：US08629488B2

    公开(公告)日：2014-01-14

    申请号：US12108361

    申请日：2008-04-23

    申请人： Sallie Hose ,  Derryl Allman ,  Peter A. Burke ,  Ponce Saopraseuth

    发明人： Sallie Hose ,  Derryl Allman ,  Peter A. Burke ,  Ponce Saopraseuth

    IPC分类号： G11C11/00

    CPC分类号： H01L28/75

    摘要： An energy storage device such as a metal-insulator-metal capacitor and a method for manufacturing the energy storage device. The metal-insulator-metal capacitor includes an insulating material positioned between a bottom electrode or bottom plate and a top electrode or top plate. The surface area of the bottom electrode is greater than the surface area of the insulating material and the surface area of the insulating material is greater than the surface area of the top electrode. The top electrode and the insulating layer have edges that are laterally within and spaced apart from edges of the bottom electrode. A protective layer covers the top electrode, the edges of the top electrode, and the portions of the insulating layer that are uncovered by the top electrode. The protective layer serves as an etch mask during the formation of the bottom electrode.

    摘要翻译： 诸如金属 - 绝缘体 - 金属电容器的能量存储装置和用于制造储能装置的方法。 金属 - 绝缘体 - 金属电容器包括位于底部电极或底板与顶部电极或顶板之间的绝缘材料。 底部电极的表面积大于绝缘材料的表面积，并且绝缘材料的表面积大于顶部电极的表面积。 顶部电极和绝缘层具有横向在底部电极的边缘内并与其间隔开的边缘。 保护层覆盖顶部电极，顶部电极的边缘和绝缘层的未被顶部电极覆盖的部分。 在形成底部电极期间，保护层用作蚀刻掩模。

    Semiconductor component and method of manufacture
    3.
    发明申请
    Semiconductor component and method of manufacture 有权
    半导体元件及制造方法

    公开(公告)号：US20090315142A1

    公开(公告)日：2009-12-24

    申请号：US12549100

    申请日：2009-08-27

    申请人： Peter A. Burke ,  Sallie Hose ,  Sudhama C. Shastri

    发明人： Peter A. Burke ,  Sallie Hose ,  Sudhama C. Shastri

    IPC分类号： H01L29/86 ,  H01L21/02

    CPC分类号： H01L23/5223 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76846 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/53238 ,  H01L28/20 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.

    摘要翻译： 一种包括集成无源器件的半导体部件和用于制造半导体部件的方法。 在衬底上方制造垂直集成的无源器件。 根据一个实施例，在基板上方的第一电平中制造电阻器，在垂直于第一电平的第二电平上制造电容器，并且在垂直于第二电平的第三电平上制造铜电感器 水平。 电容器有铝板。 根据另一个实施例，在基板上方的第一电平中制造电阻器，在垂直于第一电平的第二电平上制造铜电感器，并且制造在垂直于第二电平的第三电平的电容器 水平。 电容器可以具有铝板，或者铜电感器的一部分可以用作其板之一。

    Semiconductor component and method of manufacture
    6.
    发明授权
    Semiconductor component and method of manufacture 有权
    半导体元件及制造方法

    公开(公告)号：US07981757B2

    公开(公告)日：2011-07-19

    申请号：US12902130

    申请日：2010-10-11

    申请人： Peter A. Burke ,  Sallie Hose ,  Sudhama C. Shastri

    发明人： Peter A. Burke ,  Sallie Hose ,  Sudhama C. Shastri

    IPC分类号： H01L21/02

    CPC分类号： H01L23/5223 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76846 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/53238 ,  H01L28/20 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.

    摘要翻译： 一种包括集成无源器件的半导体部件和用于制造半导体部件的方法。 在衬底上方制造垂直集成的无源器件。 根据一个实施例，在基板上方的第一电平中制造电阻器，在垂直于第一电平的第二电平上制造电容器，并且在垂直于第二电平的第三电平上制造铜电感器 水平。 电容器有铝板。 根据另一个实施例，在基板上方的第一电平中制造电阻器，在垂直于第一电平的第二电平上制造铜电感器，并且制造在垂直于第二电平的第三电平的电容器 水平。 电容器可以具有铝板，或者铜电感器的一部分可以用作其板之一。

    Semiconductor Component and Method of Manufacture
    7.
    发明申请
    Semiconductor Component and Method of Manufacture 审中-公开
    半导体元件及制造方法

    公开(公告)号：US20110073988A1

    公开(公告)日：2011-03-31

    申请号：US12960466

    申请日：2010-12-04

    申请人： Peter A. Burke ,  Sallie Hose ,  Sudhama C. Shastri

    发明人： Peter A. Burke ,  Sallie Hose ,  Sudhama C. Shastri

    IPC分类号： H01L27/02

    CPC分类号： H01L23/5223 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76846 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/53238 ,  H01L28/20 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.

    摘要翻译： 一种包括集成无源器件的半导体部件和用于制造半导体部件的方法。 在衬底上方制造垂直集成的无源器件。 根据一个实施例，在基板上方的第一电平中制造电阻器，在垂直于第一电平的第二电平上制造电容器，并且在垂直于第二电平的第三电平上制造铜电感器 水平。 电容器有铝板。 根据另一个实施例，在基板上方的第一电平中制造电阻器，在垂直于第一电平的第二电平上制造铜电感器，并且制造在垂直于第二电平的第三电平的电容器 水平。 电容器可以具有铝板，或者铜电感器的一部分可以用作其板之一。

    SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE
    8.
    发明申请
    SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE 有权
    半导体元件及其制造方法

    公开(公告)号：US20080157217A1

    公开(公告)日：2008-07-03

    申请号：US11618363

    申请日：2006-12-29

    申请人： Peter A. Burke ,  Sallie Hose ,  Sudhama C. Shastri

    发明人： Peter A. Burke ,  Sallie Hose ,  Sudhama C. Shastri

    IPC分类号： H01L29/94 ,  H01L21/20

    CPC分类号： H01L23/5223 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76846 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/53238 ,  H01L28/20 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.

    摘要翻译： 一种包括集成无源器件的半导体部件和用于制造半导体部件的方法。 在衬底上方制造垂直集成的无源器件。 根据一个实施例，在基板上方的第一电平中制造电阻器，在垂直于第一电平的第二电平上制造电容器，并且在垂直于第二电平的第三电平上制造铜电感器 水平。 电容器有铝板。 根据另一个实施例，在基板上方的第一电平中制造电阻器，在垂直于第一电平的第二电平上制造铜电感器，并且制造在垂直于第二电平的第三电平的电容器 水平。 电容器可以具有铝板，或者铜电感器的一部分可以用作其板之一。

    Semiconductor component and method of manufacture
    10.
    发明授权
    Semiconductor component and method of manufacture 有权
    半导体元件及制造方法

    公开(公告)号：US07829426B2

    公开(公告)日：2010-11-09

    申请号：US12549100

    申请日：2009-08-27

    申请人： Peter A. Burke ,  Sallie Hose ,  Sudhama C. Shastri

    发明人： Peter A. Burke ,  Sallie Hose ,  Sudhama C. Shastri

    IPC分类号： H01L21/02

    CPC分类号： H01L23/5223 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76846 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/53238 ,  H01L28/20 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.

    摘要翻译： 一种包括集成无源器件的半导体部件和用于制造半导体部件的方法。 在衬底上方制造垂直集成的无源器件。 根据一个实施例，在基板上方的第一电平中制造电阻器，在垂直于第一电平的第二电平上制造电容器，并且在垂直于第二电平的第三电平上制造铜电感器 水平。 电容器有铝板。 根据另一个实施例，在基板上方的第一电平中制造电阻器，在垂直于第一电平的第二电平上制造铜电感器，并且制造在垂直于第二电平的第三电平的电容器 水平。 电容器可以具有铝板，或者铜电感器的一部分可以用作其板之一。