公开(公告)号：US20180130908A1

公开(公告)日：2018-05-10

申请号：US15866890

申请日：2018-01-10

Applicant: Samsung Display Co., Ltd.

Inventor： SEUNGHO YOON ,  Bong-Kyun KIM ,  Youngjun KIM ,  HONGSICK PARK ,  Byeong-Beom KIM ,  SANGWON SHIN

IPC: H01L29/786 ,  H01L29/45 ,  H01L21/467 ,  H01L21/465 ,  H01L27/12

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  H01L21/465 ,  H01L21/467 ,  H01L23/53238 ,  H01L27/124 ,  H01L29/45 ,  H01L29/66969 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor substrate includes a thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode. Each of the source electrode and the drain electrode includes a wire layer and a protective layer. The protective layer includes zinc oxide in an amount greater than about 70% by weight and less than about 85% by weight and indium oxide in an amount greater than about 15% by weight and less than about 30% by weight.

公开(公告)号：US20130320344A1

公开(公告)日：2013-12-05

申请号：US13691307

申请日：2012-11-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyung Seop KIM ,  Byeong-Beom KIM ,  Joon Yong PARK ,  Chang Oh JEONG ,  Hong Long NING ,  Dong Min LEE

IPC: H01L29/786

CPC classification number: H01L29/78693 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/7869

Abstract: A thin film transistor array panel includes: a semiconductor layer disposed on an insulation substrate; a gate electrode overlapping the semiconductor layer; a source electrode and a drain electrode overlapping the semiconductor layer; a first barrier layer disposed between the source electrode and the semiconductor layer; and a second barrier layer disposed between the drain electrode and the semiconductor layer, wherein the first barrier layer and the second barrier layer include nickel-chromium (NiCr).

Abstract translation: 薄膜晶体管阵列面板包括：设置在绝缘基板上的半导体层; 与半导体层重叠的栅电极; 与该半导体层重叠的源电极和漏电极; 设置在所述源电极和所述半导体层之间的第一阻挡层; 以及设置在所述漏电极和所述半导体层之间的第二阻挡层，其中所述第一阻挡层和所述第二阻挡层包括镍 - 铬（NiCr）。

公开(公告)号：US20130306973A1

公开(公告)日：2013-11-21

申请号：US13947459

申请日：2013-07-22

Applicant: Samsung Display Co., LTD.

Inventor： Joo-Ae YOUN ,  Yang-Ho BAE ,  Chang-Oh JEONG ,  Chong-Chul CHAI ,  Pil-Sang YUN ,  Honglong NING ,  Byeong-Beom KIM

IPC: H01L33/00

CPC classification number: H01L33/0041 ,  H01L27/124 ,  H01L29/458

Abstract: A display panel includes; a lower gate line, a lower data line disposed substantially perpendicular to the lower gate line, a thin film transistor (“TFT”) connected to the lower gate line and the lower data line, an insulating layer disposed on the lower gate line, the lower data line, and the TFT and having a plurality of trenches exposing the lower gate line and the lower data line, an upper gate line disposed in the trench on the lower gate line, an upper data line disposed in the trench on the lower data line, and a pixel electrode connected to the TFT.

Abstract translation: 显示面板包括： 下栅极线，基本上垂直于下栅极线设置的下数据线，连接到下栅极线和下数据线的薄膜晶体管（“TFT”），设置在下栅极线上的绝缘层， 下数据线和TFT，并且具有暴露下栅极线和下数据线的多个沟槽，设置在下栅极线上的沟槽中的上栅极线，设置在下数据上的沟槽中的上数据线 线和与TFT连接的像素电极。

公开(公告)号：US20210260846A1

公开(公告)日：2021-08-26

申请号：US17091365

申请日：2020-11-06

Applicant: Samsung Display Co., Ltd.

Inventor： Byeong-Beom KIM ,  MINKI KIM ,  Yuri KIM ,  Hoikwan LEE

IPC: B32B3/26 ,  C09D133/08 ,  C09D163/00 ,  C09D7/61 ,  B32B17/10

Abstract: A window includes a coating layer including a front surface, a rear surface, a first region having a constant distance between the front surface and the rear surface in a thickness direction, and a second region in which a distance between the front surface and the rear surface reduces in a direction away from the first region; and a bezel layer disposed on the rear surface of the coating layer, where the coating layer includes inorganic particles, an acrylate resin and an epoxy resin.

公开(公告)号：US20190148472A1

公开(公告)日：2019-05-16

申请号：US16185492

申请日：2018-11-09

Applicant: Samsung Display Co., Ltd.

Inventor： Woo-Seok JEON ,  Byeong-Beom KIM ,  Chulmin BAE ,  Jinho HWANG

IPC: H01L27/32

Abstract: An organic light emitting display device includes a substrate, an active layer, a gate electrode, a first high dielectric constant (hereinafter “high-k”) insulation structure, source and drain electrodes, and a light emitting structure. The active layer is disposed on the substrate. The gate electrode is disposed on the active layer. The first high-k insulation structure is disposed on the gate electrode and includes a carbon-doped first high-k insulation layer and a first ammonia layer on the carbon-doped first high-k insulation layer. The source and drain electrodes are disposed on the first high-k insulation structure and constitute a semiconductor element together with the active layer and the gate electrode. The light emitting structure is disposed on the source and drain electrodes.

公开(公告)号：US20150129885A1

公开(公告)日：2015-05-14

申请号：US14605749

申请日：2015-01-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byeong-Beom KIM ,  Je-Hyeong PARK ,  Jae-Hyoung YOUN ,  Jean-Ho SONG ,  Jong-In KIM

IPC: H01L27/12 ,  H01L23/482

CPC classification number: H01L27/124 ,  C23C14/14 ,  C23C14/34 ,  H01L23/4827 ,  H01L23/52 ,  H01L29/786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a thin film according to an exemplary embodiment of the present invention includes forming the thin film at a power density in the range of approximately 1.5 to approximately 3 W/cm2 and at a pressure of an inert gas that is in the range of approximately 0.2 to approximately 0.3 Pa. This process results in an amorphous metal thin film barrier layer that prevents undesired diffusion from adjacent layers, even when this barrier layer is thinner than many conventional barrier layers.

Abstract translation: 根据本发明的示例性实施方案的薄膜的形成方法包括以大约1.5至大约3W / cm 2的功率密度和处于该范围内的惰性气体的压力形成薄膜 大约0.2至大约0.3Pa。这个过程产生一个非晶金属薄膜阻挡层，防止相邻层的不期望的扩散，即使该阻挡层比许多传统的阻挡层薄。

公开(公告)号：US20210302293A1

公开(公告)日：2021-09-30

申请号：US17098555

申请日：2020-11-16

Applicant: Samsung Display Co., LTD.

Inventor： Yu Ri KIM ,  Hoi Kwan LEE ,  Min Ki KIM ,  Byeong-Beom KIM

IPC: G01N3/303

Abstract: A window drop test apparatus includes a support protruding in a first direction from the prop, and a guide portion that defines a drop space together with the support, where a drop test is performed through the drop space.

公开(公告)号：US20160043226A1

公开(公告)日：2016-02-11

申请号：US14710739

申请日：2015-05-13

Applicant: Samsung Display Co., Ltd.

Inventor： Seungho YOON ,  Bong-Kyun KIM ,  Youngjun KIM ,  Hongsick PARK ,  Byeong-Beom KIM ,  Sangwon SHIN

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/417 ,  H01L29/24 ,  G02F1/1362 ,  H01L21/02 ,  H01L21/465 ,  H01L21/4763 ,  H01L21/441 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  H01L21/465 ,  H01L21/467 ,  H01L23/53238 ,  H01L27/124 ,  H01L29/45 ,  H01L29/66969 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor substrate includes a thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode. Each of the source electrode and the drain electrode includes a wire layer and a protective layer. The protective layer includes zinc oxide in an amount greater than about 70% by weight and less than about 85% by weight and indium oxide in an amount greater than about 15% by weight and less than about 30% by weight.

Abstract translation: 薄膜晶体管基板包括薄膜晶体管，其包括栅电极，半导体层，源电极和漏电极。 源电极和漏电极中的每一个包括导线层和保护层。 保护层包括大于约70重量％且小于约85重量％的量的氧化锌和大于约15重量％且小于约30重量％的量的氧化铟。

公开(公告)号：US20140204315A1

公开(公告)日：2014-07-24

申请号：US14099971

申请日：2013-12-08

Applicant: Samsung Display Co., Ltd.

Inventor： JOONYONG PARK ,  SANGGAB KIM ,  CHANGOH JEONG ,  Taeho KANG ,  Kyungseop KIM ,  GWAN HA KIM ,  Byeong-Beom KIM ,  HONGLONG NING ,  SANGWON SHIN ,  Sukyoung YANG ,  YUNJONG YEO ,  Dongmin LEE ,  SHIN IL CHOI ,  Hyunju KANG ,  Sangwoo SOHN ,  Jungha SON ,  Yu-Gwang JEONG ,  GUGRAE JO ,  JINHO HWANG

IPC: G02F1/1335

CPC classification number: G02F1/136286 ,  G02F2001/133548 ,  G02F2001/13629 ,  G02F2201/38

Abstract: A display apparatus includes a backlight assembly which generates a light and a display panel which receives the light to display an image, the display panel including a first substrate, a second substrate which faces the first substrate and is disposed closer to the backlight assembly than the first substrate, a gate line disposed on the first substrate, a data line disposed on the gate line and insulated from the gate line, a thin film transistor disposed on the first substrate and electrically connected to the gate line and the data line, and a reflection preventing layer disposed between the first substrate and the gate line to reduce an amount of a reflected light reflected by the gate line.

Abstract translation: 显示装置包括产生光的背光组件和接收光以显示图像的显示面板，所述显示面板包括第一基板，面向所述第一基板并且设置成比所述第一基板更靠近所述背光组件的第二基板 第一衬底，设置在第一衬底上的栅极线，设置在栅极线上并与栅极线绝缘的数据线，设置在第一衬底上并电连接到栅极线和数据线的薄膜晶体管，以及 反射防止层，设置在第一基板和栅极线之间，以减少由栅极线反射的反射光的量。

公开(公告)号：US20140175423A1

公开(公告)日：2014-06-26

申请号：US13896045

申请日：2013-05-16

Applicant: Samsung Display Co., Ltd.

Inventor： Chang-Oh JEONG ,  Kyung Seop KIM ,  Hong Long NING ,  Byeong-Beom KIM ,  Joon Yong PARK ,  Jin Ho HWANG ,  Dong Min LEE

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

Abstract: A thin film transistor array panel is provided. The thin film transistor array panel includes a substrate, a seed layer positioned on the substrate, and a semiconductor layer positioned on the seed layer, wherein a lattice mismatch between the seed layer and the semiconductor layer is equal to or less than 1.4%.

Abstract translation: 提供薄膜晶体管阵列面板。 所述薄膜晶体管阵列面板包括基板，位于所述基板上的种子层和位于所述籽晶层上的半导体层，其中所述籽晶层与所述半导体层之间的晶格失配为1.4％以下。