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    DISPLAY PANEL
    2.
    发明申请
    DISPLAY PANEL 失效
    显示面板

    公开(公告)号：US20130306973A1

    公开(公告)日：2013-11-21

    申请号：US13947459

    申请日：2013-07-22

    Applicant: Samsung Display Co., LTD.

    Inventor： Joo-Ae YOUN ,  Yang-Ho BAE ,  Chang-Oh JEONG ,  Chong-Chul CHAI ,  Pil-Sang YUN ,  Honglong NING ,  Byeong-Beom KIM

    IPC: H01L33/00

    CPC classification number: H01L33/0041 ,  H01L27/124 ,  H01L29/458

    Abstract: A display panel includes; a lower gate line, a lower data line disposed substantially perpendicular to the lower gate line, a thin film transistor (“TFT”) connected to the lower gate line and the lower data line, an insulating layer disposed on the lower gate line, the lower data line, and the TFT and having a plurality of trenches exposing the lower gate line and the lower data line, an upper gate line disposed in the trench on the lower gate line, an upper data line disposed in the trench on the lower data line, and a pixel electrode connected to the TFT.

    Abstract translation: 显示面板包括： 下栅极线，基本上垂直于下栅极线设置的下数据线，连接到下栅极线和下数据线的薄膜晶体管（“TFT”），设置在下栅极线上的绝缘层， 下数据线和TFT，并且具有暴露下栅极线和下数据线的多个沟槽，设置在下栅极线上的沟槽中的上栅极线，设置在下数据上的沟槽中的上数据线 线和与TFT连接的像素电极。

    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY PANEL HAVING THE SAME
    3.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY PANEL HAVING THE SAME 有权
    薄膜晶体管基板和显示面板

    公开(公告)号：US20160062162A1

    公开(公告)日：2016-03-03

    申请号：US14664189

    申请日：2015-03-20

    Applicant: Samsung Display Co., LTD.

    Inventor： Hyun-Ju KANG ,  Sang-Woo SOHN ,  Sang-Won SHIN ,  Chang-Oh JEONG

    IPC: G02F1/1368 ,  H01L29/45 ,  G02F1/1362 ,  H01L29/417 ,  H01L29/423 ,  H01L27/12 ,  H01L29/49

    CPC classification number: G02F1/1368 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/136222 ,  G02F2001/13629 ,  H01L21/28008 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/458 ,  H01L29/4908

    Abstract: A thin film transistor substrate includes a base substrate and a thin film transistor. The base substrate includes a gate line and a data line. The thin film transistor is connected to the gate line and the data line. The thin film transistor includes a gate electrode, a semiconductor pattern and source, drain electrodes. The gate electrode is disposed on the base substrate. The semiconductor pattern overlaps with the gate electrode. The source, drain electrodes is spaced apart from each other. The source electrode includes a first source layer, a second source layer disposed on the first source layer and a first diffusion barrier disposed between the first source layer and second source layer. The drain electrode includes a first drain layer, a second drain layer disposed on the first drain layer and a second diffusion barrier disposed between the first drain layer and second drain layer.

    Abstract translation: 薄膜晶体管基板包括基底基板和薄膜晶体管。 基板包括栅极线和数据线。 薄膜晶体管连接到栅极线和数据线。 薄膜晶体管包括栅电极，半导体图案和源极，漏极电极。 栅电极设置在基底基板上。 半导体图案与栅电极重叠。 源极，漏极彼此间隔开。 源电极包括第一源极层，设置在第一源极层上的第二源极层和设置在第一源极层和第二源极层之间的第一扩散阻挡层。 漏极包括第一漏极层，设置在第一漏极层上的第二漏极层和设置在第一漏极层和第二漏极层之间的第二扩散阻挡层。

    SPUTTERING DEVICE
    5.
    发明申请
    SPUTTERING DEVICE 有权
    喷射装置

    公开(公告)号：US20140076714A1

    公开(公告)日：2014-03-20

    申请号：US13760758

    申请日：2013-02-06

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Jin Ho HWANG ,  Do-Hyun KIM ,  Sang Won SHIN ,  Woo Song KIM ,  Chang-Oh JEONG

    IPC: C23C14/35

    CPC classification number: C23C14/352 ,  C23C14/0063 ,  C23C14/35 ,  C23C16/455 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/3411 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3438

    Abstract: A sputtering device includes: a sputtering target; a substrate supporter facing the sputtering target and upon which a substrate is disposed; an anode mask between the sputtering target and the substrate which is on the substrate supporter; and a gas distribution member between the anode mask and the sputtering target, and including a plurality of gas distribution tubes separated from each other. Each gas distribution tube includes a plurality of discharge holes defined therein and through which gas is discharged to a vacuum chamber configured to receive the sputtering device.

    Abstract translation: 溅射装置包括：溅射靶; 面向溅射靶的衬底支撑件，并且衬底被设置在衬底支撑件上; 位于所述基板支撑体上的所述溅射靶和所述基板之间的阳极掩模; 以及位于阳极掩模和溅射靶之间的气体分配构件，并且包括彼此分离的多个气体分配管。 每个气体分配管包括限定在其中的多个排放孔，并且气体被排出到被配置为接收溅射装置的真空室。

    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
    6.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    薄膜晶体管阵列及其制造方法

    公开(公告)号：US20130270565A1

    公开(公告)日：2013-10-17

    申请号：US13907132

    申请日：2013-05-31

    Applicant: Samsung Display Co., Ltd.

    Inventor： Chang-Oh JEONG ,  Woo-Sung SOHN ,  Dong-Gyu KIM ,  Shi-Yul KIM ,  Ki-Yeup LEE ,  Jean-Ho SONG

    IPC: H01L33/16

    CPC classification number: H01L33/16 ,  H01L27/124 ,  H01L27/1288

    Abstract: A thin film transistor array panel is provided and includes a gate line, a gate insulating layer covering the gate line, a semiconductor layer disposed on the gate insulating layer, and a data line and a drain electrode disposed on the semiconductor layer. The data line and the drain electrode have a dual-layered structure including a lower layer and an upper layer with the lower layer having a first portion protruded outside the upper layer and the semiconductor layer having a second portion protruded outside the edge of the lower layer.

    Abstract translation: 提供了一种薄膜晶体管阵列面板，包括栅极线，覆盖栅极线的栅极绝缘层，设置在栅极绝缘层上的半导体层，以及设置在半导体层上的数据线和漏电极。 数据线和漏电极具有包括下层和上层的双层结构，其中下层具有突出于上层之外的第一部分，并且半导体层具有突出于下层边缘外侧的第二部分 。

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