摘要:
An etchant composition is presented. The composition includes: 18 wt % to 25 wt % of a first organic acid compound; 15 wt % to 20 wt % of a second organic acid compound; 8.1 wt % to 9.9 wt % of an inorganic acid compound; 1 wt % to 4.9 wt % of a sulfonic acid compound; 10 wt % to 20 wt % of a hydrogen sulfate salt compound; 1 wt % to 5 wt % of a nitrogen-containing dicarbonyl compound; 1 wt % to 5 wt % of an amino acid derivative compound; 0.1 wt % to 2 wt % of an iron-containing oxidizing agent compound; and a balance amount of water.
摘要:
A metal wire etchant including persulfate, a sulfonate, a fluorine compound, an azole-based compound, an organic acid, a nitrate, and a chlorine compound, and a method of making the same.
摘要:
A wet etching composition usable for etching a copper-based wiring layer includes between about 40% by weight to about 60% by weight of phosphoric acid, between about 1% by weight to about 10% by weight of nitric acid, between about 3% by weight to about 15% by weight of acetic acid, between about 0.01% by weight to about 0.1% by weight of a copper-ion compound, between about 1% by weight to about 10% by weight of a nitric salt, between about 1% by weight to about 10% by weight of an acetic salt, and a remainder of water
摘要:
An etchant composition includes: an inorganic acid compound at 9.0 wt % to 9.9 wt %; an inorganic salt compound at 5.0 wt % to 10.0 wt %; an organic acid compound at 35 wt % to 45 wt %; a lactate-based compound at 10 wt % to 20 wt %; a nitrogen cyclic compound containing oxygen at 0.1 wt % to 1.0 wt %; and a remaining amount of water such that a total weight of the etchant composition is 100 wt %, wherein the inorganic acid compound is an etchant composition having an acid dissociation constant (pKa) value of −1.0 to −3.0.
摘要:
An etching composition includes an inorganic acid compound, a carboxylic acid compound, a sulfonic acid compound, a glycol compound, a nitrogen-containing dicarbonyl compound, a sulfate compound and water.
摘要:
An etching composition for a silver-containing thin film includes an inorganic acid compound, a carboxylic acid compound, a sulfonic acid compound, a glycol compound, a nitrogen-containing dicarbonyl compound, a metal-based oxidizer, and water.
摘要:
An etchant composition includes about 25 percent by weight to about 35 percent by weight of phosphoric acid, about 3 percent by weight to about 9 percent by weight of nitric acid, about 10 percent by weight to about 20 percent by weight of acetic acid, about 5 percent by weight to about 10 percent by weight of a nitrate, about 6 percent by weight to about 15 percent by weight of a sulfonic acid, about 1 percent by weight to about 5 percent by weight of an amine compound including a carboxyl group, about 0.1 percent by weight to about 1 percent by weight of a water-soluble amino acid, about 0.01 percent by weight to about 1 percent by weight of an azole compound, and water.