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1.发明公开公开(公告)号：US20240233850A1
公开(公告)日：2024-07-11
申请号：US18403091
申请日：2024-01-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jayang YOON , Seongjin KIM , Chihyun KIM , Junehong PARK , Hyeongdo CHOI
IPC: G11C29/12
CPC classification number: G11C29/12005 , G11C2029/1202
Abstract: A word line defect detection circuit configured to detect a defect of at least one word line selected from a plurality of word lines of a memory device includes a current generating circuit configured to generate a detection reference current having a first magnitude and to apply the detection reference current to the selected word line, and a sensing amplifier configured to measure a voltage of the selected word line generated based on the detection reference current. The word line defect detection circuit may be configured to detect a defect of the selected word line in response to the voltage of the selected word line having a value less than a first reference voltage.
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公开(公告)号：US20240221846A1
公开(公告)日：2024-07-04
申请号：US18465541
申请日：2023-09-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chihyun KIM , Junehong PARK , Jayang YOON , Chiweon YOON , Hyeongdo CHOI
CPC classification number: G11C16/3427 , G11C16/10 , G11C16/26 , G11C16/30 , G11C16/3459
Abstract: In a method of operating a memory device, a first operation is performed on a memory block by applying first driving voltages to a plurality of wordlines. After the first operation is completed, a first recovery operation in which the first driving voltages applied to the plurality of wordlines are discharged is performed. After the first recovery operation is completed, a second operation is performed on the memory block by applying second driving voltages to the plurality of wordlines. In the first recovery operation, first charges among a plurality of charges stored by the first driving voltages are stored in a charge recycling memory block connected to at least one charge recycling wordline. In the second operation, the second driving voltages are applied to the plurality of wordlines using the first charges stored in the charge recycling memory block.
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3.发明公开公开(公告)号：US20240233804A1
公开(公告)日：2024-07-11
申请号：US18404411
申请日：2024-01-04
Applicant: Samsung Electronics Co., LTD.
Inventor： Jayang YOON , Chihyun Kim , Sangwan Nam , Chiweon Yoon , Hyeongdo Choi
IPC: G11C11/4074 , G11C11/4076 , G11C11/4099
CPC classification number: G11C11/4074 , G11C11/4076 , G11C11/4099
Abstract: Disclosed is a memory device in which at least one word line or bit line is charged by a plurality of charging terminals. The memory device includes a first charging terminal for supplying a first voltage to the at least one word line or bit line, and a second charging terminal for suppling a second voltage to the at least one word line or bit line when voltage supply by the first charging terminal is completed. The supply of the second voltage starts when a charged voltage of the at least one word line or bit line, charged by using the first voltage, satisfies a first reference condition.
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公开(公告)号：US20240203499A1
公开(公告)日：2024-06-20
申请号：US18468345
申请日：2023-09-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Philkyu KANG , Chihyun KIM , Junehong PARK , Jayang YOON , Chiweon YOON , Dojeon LEE
CPC classification number: G11C16/08 , G11C16/0483 , G11C16/24 , G11C16/30
Abstract: Provided is a method of operating a nonvolatile memory device including a voltage generator, the method including calculating a difference between a voltage level of a first word line node and a voltage level of a second word line node, changing a first reference voltage level of the voltage generator to a second reference voltage level based on the difference between the voltage levels, and determining a target voltage level based on any one of the first reference voltage level and the second reference voltage level. The first word line node may be closer from an output terminal of the voltage generator than the second word line node.
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