公开(公告)号：US20130295772A1

公开(公告)日：2013-11-07

申请号：US13719995

申请日：2012-12-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-sung Kim ,  Kyoung-seon Kim ,  Jae-woo Nam ,  Chul-ho Shin ,  Shi-young Yi

IPC: H01L21/308

CPC classification number: H01L21/308 ,  G03F1/00 ,  G03F1/70 ,  G03F7/0002 ,  G03F7/2024 ,  G03F7/203 ,  G03F7/70466 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0337

Abstract: A method of forming patterns includes forming a photoresist film on a substrate. The photoresist film is exposed with a first dose of light to form a first area and a second area in the photoresist film. A first hole and a second hole are formed by removing the first area and the second area with a first developer. The photoresist film is re-exposed with a second dose of the light to form a third area in the photoresist film between the first hole and the second hole. A third hole is formed between the first hole and the second hole by removing the third area with a second developer.

Abstract translation: 形成图案的方法包括在基板上形成光致抗蚀剂膜。 光致抗蚀剂膜用第一剂量的光曝光以在光致抗蚀剂膜中形成第一区域和第二区域。 通过用第一显影剂去除第一区域和第二区域来形成第一孔和第二孔。 用第二剂量的光再次曝光光致抗蚀剂膜，以在第一孔和第二孔之间的光致抗蚀剂膜中形成第三区域。 通过用第二显影剂除去第三区域，在第一孔和第二孔之间形成第三孔。

公开(公告)号：US08986554B2

公开(公告)日：2015-03-24

申请号：US13719995

申请日：2012-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-sung Kim ,  Kyoung-seon Kim ,  Jae-woo Nam ,  Chul-ho Shin ,  Shi-young Yi

IPC: H01B13/00 ,  H01L21/308 ,  G03F1/00 ,  H01L21/027 ,  H01L21/033

CPC classification number: H01L21/308 ,  G03F1/00 ,  G03F1/70 ,  G03F7/0002 ,  G03F7/2024 ,  G03F7/203 ,  G03F7/70466 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0337

Abstract: A method of forming patterns includes forming a photoresist film on a substrate. The photoresist film is exposed with a first dose of light to form a first area and a second area in the photoresist film. A first hole and a second hole are formed by removing the first area and the second area with a first developer. The photoresist film is re-exposed with a second dose of the light to form a third area in the photoresist film between the first hole and the second hole. A third hole is formed between the first hole and the second hole by removing the third area with a second developer.

Abstract translation: 形成图案的方法包括在基板上形成光致抗蚀剂膜。 光致抗蚀剂膜用第一剂量的光曝光以在光致抗蚀剂膜中形成第一区域和第二区域。 通过用第一显影剂去除第一区域和第二区域来形成第一孔和第二孔。 用第二剂量的光再次曝光光致抗蚀剂膜，以在第一孔和第二孔之间的光致抗蚀剂膜中形成第三区域。 通过用第二显影剂除去第三区域，在第一孔和第二孔之间形成第三孔。