公开(公告)号：US20130295772A1

公开(公告)日：2013-11-07

申请号：US13719995

申请日：2012-12-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-sung Kim ,  Kyoung-seon Kim ,  Jae-woo Nam ,  Chul-ho Shin ,  Shi-young Yi

IPC: H01L21/308

CPC classification number: H01L21/308 ,  G03F1/00 ,  G03F1/70 ,  G03F7/0002 ,  G03F7/2024 ,  G03F7/203 ,  G03F7/70466 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0337

Abstract: A method of forming patterns includes forming a photoresist film on a substrate. The photoresist film is exposed with a first dose of light to form a first area and a second area in the photoresist film. A first hole and a second hole are formed by removing the first area and the second area with a first developer. The photoresist film is re-exposed with a second dose of the light to form a third area in the photoresist film between the first hole and the second hole. A third hole is formed between the first hole and the second hole by removing the third area with a second developer.

Abstract translation: 形成图案的方法包括在基板上形成光致抗蚀剂膜。 光致抗蚀剂膜用第一剂量的光曝光以在光致抗蚀剂膜中形成第一区域和第二区域。 通过用第一显影剂去除第一区域和第二区域来形成第一孔和第二孔。 用第二剂量的光再次曝光光致抗蚀剂膜，以在第一孔和第二孔之间的光致抗蚀剂膜中形成第三区域。 通过用第二显影剂除去第三区域，在第一孔和第二孔之间形成第三孔。

公开(公告)号：US10062571B2

公开(公告)日：2018-08-28

申请号：US15342151

申请日：2016-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-chul Yoon ,  Kyoung-seon Kim ,  Hai-sub Na ,  Jin Park

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/027 ,  H01L21/3213 ,  H01L27/11582 ,  H01L21/311 ,  H01L21/3105

CPC classification number: H01L21/0337 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/02299 ,  H01L21/02318 ,  H01L21/02345 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/3105 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11582 ,  H01L28/00

Abstract: A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, forming a plurality of reference patterns, arranged at a first pitch, on the feature layer, forming an organic liner on a side wall of each of the plurality of reference patterns, forming a plurality of buried patterns on the organic liner, removing the organic liner exposed between the plurality of buried patterns and the plurality of reference patterns, and etching the feature layer by using the plurality of buried patterns and the plurality of reference patterns as etch masks to form a feature pattern. Each of the plurality of buried patterns covers a space between side walls of two adjacent reference patterns among the plurality of reference patterns.

公开(公告)号：US09773672B2

公开(公告)日：2017-09-26

申请号：US15016309

申请日：2016-02-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Su-min Kim ,  Hyun-woo Kim ,  Hyo-jin Yun ,  Kyoung-seon Kim ,  Hai-sub Na ,  Su-min Park ,  So-ra Han

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/28 ,  H01L21/02

CPC classification number: H01L21/0276 ,  G03F7/091 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/28273 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/32139

Abstract: A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.

公开(公告)号：US08986554B2

公开(公告)日：2015-03-24

申请号：US13719995

申请日：2012-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-sung Kim ,  Kyoung-seon Kim ,  Jae-woo Nam ,  Chul-ho Shin ,  Shi-young Yi

IPC: H01B13/00 ,  H01L21/308 ,  G03F1/00 ,  H01L21/027 ,  H01L21/033

CPC classification number: H01L21/308 ,  G03F1/00 ,  G03F1/70 ,  G03F7/0002 ,  G03F7/2024 ,  G03F7/203 ,  G03F7/70466 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0337

Abstract: A method of forming patterns includes forming a photoresist film on a substrate. The photoresist film is exposed with a first dose of light to form a first area and a second area in the photoresist film. A first hole and a second hole are formed by removing the first area and the second area with a first developer. The photoresist film is re-exposed with a second dose of the light to form a third area in the photoresist film between the first hole and the second hole. A third hole is formed between the first hole and the second hole by removing the third area with a second developer.

Abstract translation: 形成图案的方法包括在基板上形成光致抗蚀剂膜。 光致抗蚀剂膜用第一剂量的光曝光以在光致抗蚀剂膜中形成第一区域和第二区域。 通过用第一显影剂去除第一区域和第二区域来形成第一孔和第二孔。 用第二剂量的光再次曝光光致抗蚀剂膜，以在第一孔和第二孔之间的光致抗蚀剂膜中形成第三区域。 通过用第二显影剂除去第三区域，在第一孔和第二孔之间形成第三孔。