公开(公告)号：US20170053773A1

公开(公告)日：2017-02-23

申请号：US15157407

申请日：2016-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Rae-Won YI ,  Byoung-Sup AHN ,  Dong-Gun LEE ,  Su-Young LEE

IPC: H01J37/02 ,  H01J37/20 ,  H01J37/244

CPC classification number: H01J37/023 ,  H01J37/20 ,  H01J37/244 ,  H01J2237/20285 ,  H01J2237/20292 ,  H01J2237/24578

Abstract: An exposure apparatus comprising, a stage configured to receive a substrate, a mark array disposed on the stage and comprising a first mark and a second mark separated from each other by a first distance, a first beam irradiator configured to irradiate a first beam to the first mark, a second beam irradiator being separated from the first beam by a pitch greater than the first distance and configured to irradiate a second beam to the second mark, a detector disposed over the mark array and configured to receive a third beam reflected by the first mark and a fourth beam reflected by the second mark, and a controller configured to control the position of the stage using an output of the detector.

Abstract translation: 一种曝光装置，包括：被配置为接收基板的台，设置在所述台上的标记阵列，并且包括彼此分开第一距离的第一标记和第二标记;第一光束照射器，被配置为将第一光束照射到 第一标记，第二光束照射器，其与所述第一光束分开大于所述第一距离的间距，并被配置为将第二光束照射到所述第二标记;设置在所述标记阵列上方并被配置为接收由所述第一标记阵列反射的第三光束的检测器; 第一标记和由第二标记反射的第四光束，以及控制器，被配置为使用检测器的输出来控制舞台的位置。

公开(公告)号：US20140166907A1

公开(公告)日：2014-06-19

申请号：US14103381

申请日：2013-12-11

Applicant: FINE SEMITECH CORP. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Gun LEE ,  Eok-Bong KIM ,  Jong-Ju PARK ,  Seong-Sue KIM

IPC: H05G2/00

CPC classification number: H05G2/008 ,  H05G2/003

Abstract: An apparatus and a method for generating extreme ultra violet radiation are provided. The apparatus for generating extreme ultra violet radiation includes a light source, a first reflecting mirror on which source light emitted from the light source is incident, a second reflecting mirror on which first reflected light reflected by the first reflecting mirror is incident, a focus mirror on which second reflected light reflected by the second reflecting mirror is incident, the focus mirror reflecting third reflected light back to the second reflecting mirror, and a gas cell on which fourth reflected light reflected by the second reflecting mirror is incident.

Abstract translation: 提供了一种用于产生极紫外辐射的装置和方法。 用于产生极紫外线辐射的装置包括光源，从光源发射的光源入射的第一反射镜，由第一反射镜反射的第一反射光入射的第二反射镜，聚焦反射镜 在第二反射镜反射的第二反射光入射到其上的情况下，将第三反射光反射回第二反射镜的聚焦镜和由第二反射镜反射的第四反射光入射的气室。

公开(公告)号：US20170061596A1

公开(公告)日：2017-03-02

申请号：US15160540

申请日：2016-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak-Seung HAN ,  Dong-Gun LEE ,  Dong-Hoon CHUNG

IPC: G06T7/00 ,  H01L21/67 ,  G03F7/20

CPC classification number: G03F7/70783 ,  G03F1/84

Abstract: An apparatus for measuring a mask error and a method for measuring a mask error are provided. The apparatus for measuring a mask error includes a stage configured to accommodate a reference mask having a reference pattern, and a target mask adjacent to the reference mask such that a mask pattern of the target mask faces the reference pattern, a light source configured to irradiate the first beam onto the reference mask and the target mask, a light receiving unit including an image sensor, and the image sensor configured to receive a composite image including a first image generated from the reference pattern and a second image generated from the mask pattern, and generate a third image from the first image and the second image, and a measuring unit configured to measure an error of the mask pattern from the third image.

Abstract translation: 提供了一种用于测量掩模误差的装置和用于测量掩模误差的方法。 用于测量掩模误差的装置包括被配置为容纳具有参考图案的参考掩模和与参考掩模相邻的目标掩模的级，使得目标掩模的掩模图案面向参考图案，被配置为照射 第一光束到参考掩模和目标掩模上，光接收单元包括图像传感器，并且图像传感器被配置为接收包括从参考图案生成的第一图像和从掩模图案生成的第二图像的合成图像， 并从第一图像和第二图像生成第三图像，以及测量单元，被配置为从第三图像测量掩模图案的误差。

公开(公告)号：US20160154296A1

公开(公告)日：2016-06-02

申请号：US14814763

申请日：2015-07-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hyun KIM ,  Dong-Wan KIM ,  Chang-Min PARK ,  In-Sung KIM ,  Dong-Gun LEE

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective extreme ultraviolet (EUV) mask includes a mask substrate, a reflecting layer on an upper surface of the mask substrate, and an absorbing layer pattern on an upper surface of the reflecting layer, the absorbing layer pattern having an exposing region and a peripheral region, and the absorbing layer pattern including a grating pattern in the peripheral region to reduce reflectivity of light incident on the peripheral region.

Abstract translation: 反射型极紫外（EUV）掩模包括掩模基板，掩模基板的上表面上的反射层和反射层的上表面上的吸收层图案，吸收层图案具有曝光区域和周边 区域，并且吸收层图案包括在周边区域中的光栅图案，以减少入射到周边区域的光的反射率。