公开(公告)号：US20170162746A1

公开(公告)日：2017-06-08

申请号：US15270156

申请日：2016-09-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam-goo CHA ,  Young-soo PARK ,  Dong-hyun CHO

IPC: H01L33/10 ,  H01L33/50 ,  H01L27/15 ,  H01L33/06 ,  H01L33/60 ,  H01L33/38

CPC classification number: H01L33/10 ,  H01L25/0756 ,  H01L27/153 ,  H01L33/06 ,  H01L33/385 ,  H01L33/46 ,  H01L33/504 ,  H01L33/60

Abstract: A light-emitting device includes a substrate including a top surface and a first side surface, wherein an area of the top surface is larger than an area of the first side surface, and a light-emitting structure on the first side surface of the substrate, the light-emitting structure having a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer, wherein the light-emitting structure emits a first light having a first peak wavelength, and wherein an emission area of a first light emitted through the top surface of the substrate is larger than an emission area of a first light emitted through the first side surface of the substrate.

公开(公告)号：US20170018685A1

公开(公告)日：2017-01-19

申请号：US15151017

申请日：2016-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-hyun CHO ,  Taek-sung KIM ,  Nam-goo CHA

IPC: H01L33/42 ,  H01L33/38 ,  H01L27/15

CPC classification number: H01L27/153 ,  H01L33/007 ,  H01L33/08 ,  H01L33/16 ,  H01L33/24 ,  H01L33/385 ,  H01L2933/0016

Abstract: A method of manufacturing a light-emitting diode (LED) includes preparing a substrate, forming a plurality of semiconductor light-emitting units on the substrate, each of the plurality of semiconductor light-emitting units protruding from the substrate and including a first conductive semiconductor layer, and an active layer and a second conductive semiconductor layer, the active layer and the second conductive semiconductor layer sequentially covering the first conductive semiconductor layer, dipping the semiconductor light-emitting units into an aqueous solution containing metal salt and an alkaline ligand compound, and forming an electrode layer on the plurality of semiconductor light-emitting units, wherein the forming the electrode layer includes maintaining a temperature of the aqueous solution between about 40° C. and about 200° C.

Abstract translation: 一种制造发光二极管（LED）的方法包括：准备衬底，在所述衬底上形成多个半导体发光单元，所述多个半导体发光单元中的每一个从所述衬底突出并且包括第一导电半导体 所述有源层和所述第二导电半导体层依次覆盖所述第一导电半导体层，将所述半导体发光单元浸入含有金属盐和碱性配体化合物的水溶液中， 以及在所述多个半导体发光单元上形成电极层，其中形成所述电极层包括将所述水溶液的温度保持在约40℃至约200℃之间。