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1.发明申请公开(公告)号：US20180030617A1
公开(公告)日：2018-02-01
申请号：US15641746
申请日：2017-07-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sam-mook KANG , Jun-youn KIM , Young-jo TAK , Mi-hyun KIM , Young-soo PARK
CPC classification number: C30B25/165 , C23C14/0617 , C23C14/221 , C23C14/54 , C23C16/01 , C23C16/0272 , C23C16/303 , C23C16/455 , C23C16/4585 , C23C16/52 , C30B25/12 , C30B25/14 , C30B25/183 , C30B29/406 , H01J37/00 , H01L21/02002 , H01L21/02381 , H01L21/0254 , H01L21/0262 , H01L21/68721 , H01L21/68735 , H01L21/7806
Abstract: An apparatus includes a deposition chamber housing that accommodates a growth substrate, a supply nozzle to supply a deposition gas for forming a target large-size substrate on the growth substrate into the deposition chamber housing, a susceptor to support the growth substrate and expose a rear surface of the growth substrate to an etch gas, and an inner liner connected to the susceptor. The inner liner is to isolate the etch gas from the deposition gas and guide the etch gas toward the rear surface of the growth substrate. The susceptor includes a center hole that exposes the rear surface of the growth substrate and a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole.
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2.发明申请SEMICONDUCTOR LIGHT EMITTING DEVICES HAVING AN UNEVEN EMISSION PATTERN LAYER AND METHODS OF MANUFACTURING THE SAME 审中-公开具有无电子发射图案的半导体发光器件及其制造方法公开(公告)号：US20150093848A1
公开(公告)日：2015-04-02
申请号：US14564928
申请日：2014-12-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Su-hee CHAE , Young-soo PARK , Bok-ki MIN , Jun-youn KIM , Hyun-gi HONG
CPC classification number: H01L33/0066 , H01L33/0075 , H01L33/0079 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/382 , H01L33/405 , H01L2933/0016
Abstract: Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor layer, the emission pattern including an emission pattern for externally emitting light generated from the active layer.
Abstract translation: 示例性实施例涉及发光器件（LED）及其制造方法。 LED包括第一半导体层; 第二半导体层; 形成在所述第一和第二半导体层之间的有源层; 以及在所述第一半导体层上包括多层的发光图案层，所述发光图案包括用于从所述有源层产生的外部发射光的发射图案。
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公开(公告)号：US20130175541A1
公开(公告)日：2013-07-11
申请号：US13733632
申请日：2013-01-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung-soo PARK , Moon-sang LEE , Young-soo PARK
CPC classification number: H01L21/02389 , H01L21/02381 , H01L21/02439 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02664 , H01L21/3065 , H01L29/2003
Abstract: A method of growing a nitride semiconductor layer may include preparing a substrate in a reactor, growing a first nitride semiconductor on the substrate at a first temperature, the first nitride semiconductor having a thermal expansion coefficient different from a thermal expansion coefficient of the substrate, and removing the substrate at a second temperature.
Abstract translation: 生长氮化物半导体层的方法可以包括在反应器中制备衬底，在第一温度下在衬底上生长第一氮化物半导体，第一氮化物半导体具有不同于衬底的热膨胀系数的热膨胀系数，以及 在第二温度下去除衬底。
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公开(公告)号：US20190067257A1
公开(公告)日：2019-02-28
申请号：US16178025
申请日：2018-11-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ji-hye YEON , Wan-tae LIM , Young-soo PARK , Jung-sub KIM , Jin-sub LEE , Ha-nul YOO , Hye-seok NOH
IPC: H01L25/075 , H01L33/50
Abstract: A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer.
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5.发明申请ZINC TARGET INCLUDING FLUORINE, METHOD OF FABRICATING ZINC NITRIDE THIN FILM BY USING THE SAME, AND METHOD OF FABRICATING THIN FILM TRANSISTOR BY USING THE SAME 审中-公开包含氟化物的ZINC目标，使用该方法制备氮化锌薄膜的方法，以及使用该方法制备薄膜晶体管的方法公开(公告)号：US20140363932A1
公开(公告)日：2014-12-11
申请号：US14187889
申请日：2014-02-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Myung-kwan RYU , Tae-sang KIM , Hyun-suk KIM , Joon-seok PARK , Young-soo PARK
CPC classification number: C23C14/3414 , C23C14/0057 , C23C14/0641 , C23C14/0676 , H01L29/66969 , H01L29/7869
Abstract: Provided are fluorine-containing zinc targets, methods of fabricating a zinc oxynitride thin film by using the zinc targets, and methods of fabricating a thin film transistor by using the zinc oxynitride thin film. The methods include mounting a fluorine-containing zinc target and a substrate in a sputtering chamber, supplying nitrogen gas and inert gas into the sputtering chamber, and forming a fluorine-containing zinc oxynitride thin film on the substrate.
Abstract translation: 提供含氟锌靶，通过使用锌靶制造氮氧化锌薄膜的方法，以及通过使用氮氧化锌薄膜制造薄膜晶体管的方法。 所述方法包括在溅射室中安装含氟锌靶和基板，向溅射室供给氮气和惰性气体，并在基板上形成含氟的氮氧化锌薄膜。
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Patent Agency Ranking
公开(公告)号：US20200066689A1
公开(公告)日：2020-02-27
申请号：US16662714
申请日：2019-10-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ji-hye YEON , Wan-tae LIM , Young-soo PARK , Jung-sub KIM , Jin-sub LEE , Ha-nul YOO , Hye-seok NOH
IPC: H01L25/075 , H01L33/50
Abstract: A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a partition layer. The LED device may be configured to reduce optical interferences between the light-emitting cells. The LED device includes a plurality of light-emitting structures spaced apart from one another; a plurality of electrode layers on respective first surfaces of the light-emitting structures, a separation layer configured to electrically insulate the light-emitting structures from each other; phosphor layers on respective second surfaces of the light-emitting structures and associated with different colors, and a partition layer between the phosphor layers to separate the phosphor layers from one another. Each light-emitting cell may include a separate light-emitting structure, a separate set of one or more electrodes, and a separate phosphor layer.
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公开(公告)号：US20140353677A1
公开(公告)日：2014-12-04
申请号：US14294823
申请日：2014-06-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Young-jo TAK , Jae-kyun KIM , Joo-sung KIM , Jun-youn KIM , Young-soo PARK , Eun-ha LEE
CPC classification number: H01L21/0254 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L33/007 , H01L33/12 , H01L33/325 , H01S5/0014 , H01S5/021 , H01S5/34333
Abstract: Provided are a low-defect semiconductor device and a method of manufacturing the same. The method includes forming a buffer layer on a silicon substrate, forming an interface control layer on the buffer layer under a first growth condition, and forming a nitride stack on the interface control layer under a second growth condition different from the first growth condition.
Abstract translation: 提供了一种低缺陷半导体器件及其制造方法。 该方法包括在硅衬底上形成缓冲层，在第一生长条件下在缓冲层上形成界面控制层，并在不同于第一生长条件的第二生长条件下，在界面控制层上形成氮化层。
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公开(公告)号：US20170162746A1
公开(公告)日：2017-06-08
申请号：US15270156
申请日：2016-09-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Nam-goo CHA , Young-soo PARK , Dong-hyun CHO
CPC classification number: H01L33/10 , H01L25/0756 , H01L27/153 , H01L33/06 , H01L33/385 , H01L33/46 , H01L33/504 , H01L33/60
Abstract: A light-emitting device includes a substrate including a top surface and a first side surface, wherein an area of the top surface is larger than an area of the first side surface, and a light-emitting structure on the first side surface of the substrate, the light-emitting structure having a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer, wherein the light-emitting structure emits a first light having a first peak wavelength, and wherein an emission area of a first light emitted through the top surface of the substrate is larger than an emission area of a first light emitted through the first side surface of the substrate.
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公开(公告)号：US20140073115A1
公开(公告)日：2014-03-13
申请号：US13743634
申请日：2013-01-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Moon-sang LEE , Sung-soo PARK , Young-soo PARK
IPC: H01L21/02
CPC classification number: H01L21/02263 , H01L21/02002 , H01L21/02381 , H01L21/02439 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02642
Abstract: A method of manufacturing a large area gallium nitride (GaN) substrate includes forming a buffer layer on a silicon substrate, forming an insulation layer pattern on a rim of a top surface of the buffer layer, growing a GaN layer on the buffer layer, and removing the insulation layer pattern and a portion of the GaN layer and the silicon substrate.
Abstract translation: 制造大面积氮化镓（GaN）衬底的方法包括在硅衬底上形成缓冲层，在缓冲层顶表面的边缘上形成绝缘层图案，在缓冲层上生长GaN层，以及 去除绝缘层图案和GaN层和硅衬底的一部分。
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10.发明申请VERTICAL LIGHT-EMITTING DEVICES HAVING PATTERNED EMITTING UNIT AND METHODS OF MANUFACTURING THE SAME 审中-公开具有图案发射单元的垂直发光装置及其制造方法公开(公告)号：US20140057381A1
公开(公告)日：2014-02-27
申请号：US14067185
申请日：2013-10-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyung-su JEONG , Young-soo PARK , Su-hee CHAE , Bok-ki MIN , Jun-youn KIM , Hyun-gi HONG , Young-jo TAK , Jae-won LEE
CPC classification number: H01L33/0025 , H01L27/156 , H01L33/32 , H01L33/38 , H01L33/42
Abstract: Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer.
Abstract translation: 示例性实施例涉及包括图案化发光单元的发光器件和制造发光器件的方法。 发光器件包括在半导体层的顶部上的第一电极和在半导体层的底部上的第二电极，其中半导体层是由多个堆叠形成的图案阵列。 多个堆叠之间的空间填充有绝缘层，并且第一电极在绝缘层上。
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