公开(公告)号：US20210003929A1

公开(公告)日：2021-01-07

申请号：US16711593

申请日：2019-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eokbong KIM ,  Mun Ja Kim

IPC: G03F7/20 ,  G03F1/62 ,  G02B5/20 ,  G02B5/08 ,  G03F1/24

Abstract: An EUV lithography apparatus may include a light source, an EUV mask and a carbon-based optical filter. The light source may generate an EUV light. The EUV mask may be configured to apply the EUV light to a photoresist film on a substrate. The carbon-based optical filter may filter a light having an OoB wavelength in the EUV light. Thus, the EUV light may not include the light having the OoB wavelength to decrease an error of a photoresist pattern formed using the EUV light.

公开(公告)号：US20180130714A1

公开(公告)日：2018-05-10

申请号：US15609284

申请日：2017-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eokbong KIM ,  Jin sung CHOI ,  Mun Ja KIM ,  Kijung SON

IPC: H01L21/66 ,  H01L21/027 ,  G03F1/62

CPC classification number: H01L22/20 ,  G01F1/86 ,  G03F1/44 ,  G03F1/62 ,  G03F1/86 ,  H01L21/0274 ,  H01L22/12

Abstract: A reticle may be fabricated and inspected. The reticle, which may include thin patterns, may be selectively incorporated into a fabricated semiconductor device based on measurement information generated based on the inspecting. The inspecting may include forming thin patterns on a substrate, forming a first discharge layer on the thin patterns, and directing a first charged particle beam to the substrate, such that the first charged particle beam passes through the first discharge layer. Measurement information may be generated based on the first charged particle beam. The first discharge layer may connect the thin patterns to each other and may be separated from the substrate between the thin patterns.

公开(公告)号：US20170031142A1

公开(公告)日：2017-02-02

申请号：US15183015

申请日：2016-06-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eokbong KIM ,  Mun Ja KIM ,  Jongju PARK ,  Donggun LEE ,  Byunggook KIM

IPC: G02B19/00 ,  G03F7/20 ,  H05G2/00

CPC classification number: G02B19/0095 ,  G02B5/003 ,  G02B19/0023 ,  G03F7/70033 ,  G03F7/70916 ,  G21K1/062 ,  G21K1/10 ,  H05G2/001

Abstract: An extreme ultraviolet (EUV) light generation apparatus includes a source supplying unit in a chamber, the source supplying unit including a source material for generation of extreme ultraviolet light, a plasma generator to generate plasma from the source material, an optical unit in the chamber, and at least one protection film adjacent to the optical unit, the at least one protection film including at least one of graphite or graphene.

Abstract translation: 一种极紫外（EUV）光产生装置包括：室中的源供给单元，源供给单元，包括用于产生极紫外光的源材料;等离子体发生器，用于从源材料产生等离子体;室中的光学单元; 以及与光学单元相邻的至少一个保护膜，所述至少一个保护膜包括石墨或石墨烯中的至少一个。