公开(公告)号：US20210109660A1

公开(公告)日：2021-04-15

申请号：US16999201

申请日：2020-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YEONJI KIM ,  YOUNGDEOK SEO ,  CHANHA KIM ,  KANGHO ROH ,  HYUNKYO OH ,  HEEWON LEE

IPC: G06F3/06

Abstract: An operation method of a storage controller which includes a nonvolatile memory device, the method including: collecting a first parameter indicating a degradation factor of a first memory area of the nonvolatile memory device and a second parameter indicating a degree of degradation occurring at the first memory area, in an initial driving period; selecting a first function model of a plurality of function models based on the first parameter and the second parameter and predicting a first error tendency of the first memory area based on the first function model; determining a first reliability interval based on the first error tendency; and performing a first reliability operation on the first memory area of the nonvolatile memory device based on the first reliability interval.

公开(公告)号：US20240046993A1

公开(公告)日：2024-02-08

申请号：US18170893

申请日：2023-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： WOOHYUN KANG ,  JIN-YOUNG KIM ,  HYUNA KIM ,  SE HWAN PARK ,  YOUNGDEOK SEO ,  HYUNKYO OH ,  HEEWON LEE ,  DONGHOO LIM

IPC: G11C16/12 ,  G11C16/26 ,  G06F11/10

CPC classification number: G11C16/12 ,  G11C16/26 ,  G06F11/1044

Abstract: A method of operating a non-volatile memory device, which is configured to communicate with a storage controller includes: receiving a first request indicating a read reclaim determination and including environment information from the storage controller, performing a first on-chip read operation for generating first distribution information based on the first request, determining whether a read reclaim is required based on the first distribution information, and providing the storage controller with a determination result having a first bit value in response to determining that the read reclaim is required.

公开(公告)号：US20180108422A1

公开(公告)日：2018-04-19

申请号：US15615849

申请日：2017-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUNKYO OH ,  SEUNGKYUNG RO ,  HEEWON LEE ,  SEONGNAM KWON ,  OAK-HA KIM ,  DONGGI LEE

IPC: G11C16/34 ,  G11C29/52 ,  G11C29/04 ,  G06N99/00

Abstract: A memory system includes multiple storage devices that each include a nonvolatile memory device. A client device is configured to collect deterioration information of the nonvolatile memory devices provided from the storage devices. A server device is configured to receive the collected deterioration information and to predict a degree of deterioration of the nonvolatile memory devices in real time by performing machine learning based on the collected deterioration information and initial deterioration information. The client device determines a read level of the nonvolatile memory device based on the degree of deterioration of the nonvolatile memory devices from the server device. The storage device sets the nonvolatile memory device to operate based on the read level determined in the client device.