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公开(公告)号：US20220189575A1
公开(公告)日：2022-06-16
申请号：US17376932
申请日：2021-07-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： YOUNGDEOK SEO , WOOHYUN KANG , JINYOUNG KIM , KANGHO ROH , SEHWAN PARK , ILHAN PARK , HEETAI OH , HEEWON LEE , SILWAN CHANG , SANGHYUN CHOI
Abstract: A memory device may determine cell count information from a threshold voltage distribution of memory cells and may determine a detection case based on cell count information when correction of an error in read data, received from the memory device performing a read operation, fails. The memory controller may control the memory device to perform a read operation using a development time determined in consideration of an offset voltage of a read voltage corresponding to the detection case. When correction of the error in the read data fails again, the memory controller may control the memory device to perform a read operation using a corrected read voltage generated using a dynamic offset voltage obtained by inputting the cell count information to a machine learning model.
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公开(公告)号：US20240046993A1
公开(公告)日：2024-02-08
申请号：US18170893
申请日：2023-02-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： WOOHYUN KANG , JIN-YOUNG KIM , HYUNA KIM , SE HWAN PARK , YOUNGDEOK SEO , HYUNKYO OH , HEEWON LEE , DONGHOO LIM
CPC classification number: G11C16/12 , G11C16/26 , G06F11/1044
Abstract: A method of operating a non-volatile memory device, which is configured to communicate with a storage controller includes: receiving a first request indicating a read reclaim determination and including environment information from the storage controller, performing a first on-chip read operation for generating first distribution information based on the first request, determining whether a read reclaim is required based on the first distribution information, and providing the storage controller with a determination result having a first bit value in response to determining that the read reclaim is required.
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